US5253262A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser device with multi-directional reflector arranged therein
Assignee: Toshiba Corp
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Filing: 1991-10-30
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Granted: 1993-10-12
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Expires: 2011-10-30
Abstract
Abstract A microcavity semiconductor laser disclosed therein includes a double-heterostructure section including an intermediate active layer sandwiched between a first or lower cladding layer and a second or upper cladding layer above a semiconductive substrate. A first multi-layered reflector section is arranged between the substrate and the double-heterostructure section to have its reflectance which becomes maximum near the oscillation wavelength of the laser. The upper cladding layer is semi-spherically formed. A three-dimensional optical reflector covers the double-heterostructure section, for controlling spontaneous emission obtained in the double-heterostructure section along various directions, and for increasing the coupling ratio of spontaneous emission with a specific laser mode, thereby to decrease the threshold current.
Inventors
- 👤 Atsushi Kurobe
- 👤 Tsutomu Tezuka
- 👤 Tetsuo Sadamasa
- 👤 Mitsuhiro Kushibe
- 👤 Yoshito Kawakyu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 15:07
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/183; H01S5/18308; H01S5/18322; H01S5/18327; B; B82; B82Y; B82Y20/00; H01S5/18386; H01S5/18388; H01S5/20; H01S5/22; H01S5/227; H01S2301/00; H01S2301/18; H01S5/1042; H01S5/1071; H01S5/1078; H01S5/1082; H01S5/12; H01S5/1228; H01S5/18305; H01S5/18319; H01S5/18344; H01S5/1835; H01S5/18352; H01S5/2004; H01S5/2018; H01S5/2027; H01S5/2205; H01S5/2275; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/34; H01S5/343; H01S5/34313; H01S5/40; H01S5/4025; H01S5/4031; H01S5/4056
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
156 words
A semiconductor laser device comprising: a semiconductive substrate having a surface; a first distributed reflector section having two kinds of semiconductor layers which are different in refractive index from each other and are alternately laminated; a double-heterostructure section including a first or lower semiconductive cladding layer and a second or upper cladding semiconductive layer separated by an intermediate active layer; a second distributed reflector section on said double-heterostructure section with two kinds of semiconductor layers which are different in refractive index from each other and are alternately laminated; said first reflector section, said double-heterostructure section, and said second reflector section having a projected structure with a side wall; and a third distributed reflector section surrounding said side wall of said projected structure on said substrate and including two kinds of semiconductor layers which are different in refractive index from each other and are alternately laminated along a certain direction parallel with the surface of said substrate.
Claim 2
Dependent Claim
156 words
A semiconductor laser device comprising: a semiconductive substrate having a surface; a first distributed reflector section having two kinds of semiconductor layers which are different in refractive index from each other and are alternately laminated; a double-heterostructure section including a first or lower semiconductive cladding layer and a second or upper cladding semiconductive layer separated by an intermediate active layer; a second distributed reflector section on said double-heterostructure section with two kinds of semiconductor layers which are different in refractive index from each other and are alternately laminated; said first reflector section, said double-heterostructure section, and said second reflector section having a projected structure with a side wall; and a third distributed reflector section surrounding said side wall of said projected structure on said substrate and including two kinds of semiconductor layers which are different in refractive index from each other and are alternately laminated along a certain direction parallel with the surface of said substrate.
Claim 3
Dependent Claim
24 words
A laser according to claim 1, further comprising: insulator means for increasing electrical insulation between said first reflector section and said third reflector section.
Claim 4
Dependent Claim
24 words
A laser according to claim 2, wherein, said, second and third reflector sections define therebetween an interface region which is doped with an impurity.
Claim 5
Dependent Claim
24 words
A laser according to claim 3, further comprising: a conductive layer which at least partially covers said projected structure and said third reflector section.
Claim 6
Dependent Claim
17 words
A laser according to claim 4, wherein said second and third reflector sections include a proton-implanted region.
References Cited (Backward Citations)
JPH02125670A
Cited
US5052016A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-10-11 | 1997-04-12 | 1997-10-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-10-11 | 2001-04-12 | 2001-10-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-10-11 | 2005-04-12 | 2005-10-12 | $7700.00 | Window Closed / Lapsed |