US5252174A
Expired / Lapsed
US
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Method for manufacturing substrates for depositing diamond thin films
Assignee: Panasonic Holdings Corp
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Filing: 1992-05-28
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Granted: 1993-10-12
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Expires: 2012-05-28
Abstract
Abstract A method for manufacturing substrates for depositing diamond thin films is disclosed. In the method, a hydrocarbon gas is discharge-decomposed, products generated by the discharge decomposition are accelerated to implant them in a surface layer of a substrate made of a material other than diamond and, thereby, the surface layer having bondings of carbon atoms and atoms compositing the substrate. Desirably, the substrate thus manufactured is subjected to a heat treatment at a temperature ranging from 800° to 1,200° C.
Inventors
- 👤 Masahiro Deguchi
- 👤 Takashi Hirao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 04:20
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/18; C23; C23C; C23C14/00; C23C14/22; C23C14/48; C23C16/00; C23C16/02; C23C16/0209; C23C16/0272; C30B29/00; C30B29/02; C30B29/04
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
75 words
A method for manufacturing substrates for depositing diamond thin films which comprises: a. decomposing hydrocarbon gas, b. accelerating products obtained in a. by a direct current electric field smaller than 10 kv, c. implanting the accelerated products of b. into a single crystalline silicon substrate kept at a temperature ranging from 10° to 800° C. and, thereby, d. forming a carbonized surface layer substantially inside the substrate thereof, said carbonized surface layer containing Si-C bonds.
Claim 2
Independent Claim
75 words
A method for manufacturing substrates for depositing diamond thin films which comprises: a. decomposing hydrocarbon gas, b. accelerating products obtained in a. by a direct current electric field smaller than 10 kv, c. implanting the accelerated products of b. into a single crystalline silicon substrate kept at a temperature ranging from 10° to 800° C. and, thereby, d. forming a carbonized surface layer substantially inside the substrate thereof, said carbonized surface layer containing Si-C bonds.
Claim 3
Dependent Claim
18 words
The method as claimed in claim 1, in which said substrate material is partially covered with a mask.
Claim 4
Dependent Claim
13 words
The method as claimed in claim 1, in which said products are ions.
Claim 5
Dependent Claim
23 words
The method as claimed in claim 1, in which the surface of said single crystal silicon for forming said layer is (111) plane.
Claim 6
Dependent Claim
28 words
The method as claimed in claim 1, further provides a step for subjecting said substrate to a heat treatment at a temperature ranging from 800° to 1,200° C.
References Cited (Backward Citations)
JPS60122794A
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JPS60186499A
Cited
JPS61151096A
Cited
JPS61251506A
Cited
WO1988010321A1
Cited
JPH01145313A
Cited
US4997636A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-10-11 | 1997-04-12 | 1997-10-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-10-11 | 2001-04-12 | 2001-10-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-10-11 | 2005-04-12 | 2005-10-12 | $7700.00 | Window Closed / Lapsed |