US5250798A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid state image sensor device with microlenses
Assignee: Toshiba Corp
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Filing: 1991-12-24
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Granted: 1993-10-05
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Expires: 2011-12-24
Abstract
Abstract A solid state image sensor device has a semiconductor substrate, picture elements arranged on the semiconductor substrate in a matrix, and microlenses. Each microlens is arranged with a plurality of single-layer microlens parts on each picture element for condensing an incident light transferred from outside of the solid state image sensor device.
Inventors
- 👤 Yasuo Iizuka
- 👤 Akira Komatsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 05:07
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153; H10F39/1534; G; G02; G02B; G02B3/00; G02B3/0006; G02B3/0037; G02B3/0056; H10F39/80; H10F39/806; H10F39/8063
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
68 words
A solid state image sensor device comprising: a semiconductor substrate; a plurality of picture elements arranged on the semiconductor substrate in a matrix; and a plurality of microlenses, each of said microlenses arranged with a single-layer microlens on each of said picture elements, such that said microlenses are spaced apart from each other for condensing an incident light transferred from outside of the solid state image sensor device.
Claim 2
Dependent Claim
68 words
A solid state image sensor device comprising: a semiconductor substrate; a plurality of picture elements arranged on the semiconductor substrate in a matrix; and a plurality of microlenses, each of said microlenses arranged with a single-layer microlens on each of said picture elements, such that said microlenses are spaced apart from each other for condensing an incident light transferred from outside of the solid state image sensor device.
Claim 3
Dependent Claim
61 words
A solid state image sensor device comprising: a semiconductor substrate; a plurality of picture elements arranged on the semiconductor substrate in a matrix; and a plurality of microlenses, each of said microlenses having a plurality of single-layer microlens parts positioned on each of said picture elements, for condensing an incident light transferred from outside of the solid state image sensor device.
Claim 4
Dependent Claim
61 words
A solid state image sensor device comprising: a semiconductor substrate; a plurality of picture elements arranged on the semiconductor substrate in a matrix; and a plurality of microlenses, each of said microlenses having a plurality of single-layer microlens parts positioned on each of said picture elements, for condensing an incident light transferred from outside of the solid state image sensor device.
Claim 5
Dependent Claim
29 words
A solid state image sensor device according to claim 2, wherein each of said microlenses has a pair of single-layer microlens parts positioned on each of said picture elements.
Claim 6
Dependent Claim
27 words
A solid state image sensor device according to claim 2, wherein each of said microlenses has four single-layer microlens parts positioned on each of said picture elements.
Claim 7
Dependent Claim
123 words
A solid state image sensor device comprising: a semiconductor substrate; a plurality of picture elements arranged on the semiconductor substrate in a matrix; a plurality of horizontal CCDs formed along a row of the picture elements; a plurality of vertical CCDs formed along a column of the picture elements; and a plurality of microlenses for condensing an incident light transferred from outside of the solid state image sensor device, wherein each of said microlenses has a two-microlens-layer structure including a first-microlens-layer and a second-microlens-layer, the first-microlens-layer is arranged in a semi-cylindrical shape in one column of the picture elements along the vertical CCD line, and the second-microlens-layer having a double lens structure is arranged by each of said picture elements in the first-microlens-layer.
Claim 8
Dependent Claim
123 words
A solid state image sensor device comprising: a semiconductor substrate; a plurality of picture elements arranged on the semiconductor substrate in a matrix; a plurality of horizontal CCDs formed along a row of the picture elements; a plurality of vertical CCDs formed along a column of the picture elements; and a plurality of microlenses for condensing an incident light transferred from outside of the solid state image sensor device, wherein each of said microlenses has a two-microlens-layer structure including a first-microlens-layer and a second-microlens-layer, the first-microlens-layer is arranged in a semi-cylindrical shape in one column of the picture elements along the vertical CCD line, and the second-microlens-layer having a double lens structure is arranged by each of said picture elements in the first-microlens-layer.
Claim 9
Dependent Claim
122 words
A solid state image sensor device comprising: a semiconductor substrate; a plurality of picture elements arranged on the semiconductor substrate in a matrix; a plurality of horizontal CCDs formed along a row of the picture elements; a plurality of vertical CCDs formed along a column of the picture elements; and a plurality of microlenses for condensing an incident light transferred from outside of the solid state image sensor device, wherein each of said microlenses has a two-microlens-layer structure having a first-microlens-layer and a second-microlens-layer, the first-microlens-layer is arranged in a semi-cylindrical shape in one column of the picture elements along the vertical CCD line, and the second-microlens-layer having a four-part lens structure is arranged by each of picture elements in the first-microlens-layer.
Claim 10
Dependent Claim
122 words
A solid state image sensor device comprising: a semiconductor substrate; a plurality of picture elements arranged on the semiconductor substrate in a matrix; a plurality of horizontal CCDs formed along a row of the picture elements; a plurality of vertical CCDs formed along a column of the picture elements; and a plurality of microlenses for condensing an incident light transferred from outside of the solid state image sensor device, wherein each of said microlenses has a two-microlens-layer structure having a first-microlens-layer and a second-microlens-layer, the first-microlens-layer is arranged in a semi-cylindrical shape in one column of the picture elements along the vertical CCD line, and the second-microlens-layer having a four-part lens structure is arranged by each of picture elements in the first-microlens-layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-10-04 | 1997-04-05 | 1997-10-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-10-04 | 2001-04-05 | 2001-10-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-10-04 | 2005-04-05 | 2005-10-05 | $7700.00 | Window Closed / Lapsed |