Abstract A method of providing a reagent into a chemical process said provision being in the vapor phase and at a controlled mass flow rate wherein the method comprises: (a) providing a gas stream which contains a gaseous phase complexing agent for the reagent said complexing agent being provided at a controlled partial vapor pressure in said gas stream; (b) providing a primary source of the reagent in a reservoir which is connected to the gas stream via a diffusion path; (c) causing the gaseous phase complexing agent to diffuse into the reservoir at a mass flow rate controlled by its partial pressure in the gas stream; (d) causing the gaseous phase complexing agent in the reservoir to react with the primary source to generate a gaseous phase complex of the reagent and the gaseous phase complexing agent, said generation being, in the steady state, at a rate equivalent to the rate of inflow of said complexing agent; (e) causing the gaseous phase complex to diffuse out of the reservoir into the gas stream at a rate, in the steady state, which is equivalent to its rate of generation in stage (d); whereby the mass flow of reagent occurs at a rate defined and controlled by the vapor pressure of the vapor phase complexing agent in the gas stream.
A method of growing a semiconductor product by metal organic vapour phase epitaxy, which method includes providing a controlled mass flow rate of an organo-metallic reagent X into a metal organic vapour phase epitaxy reaction wherein the reagent X is in the form of a gaseous phase complex BX that is produced from a solid phase complex AX and a gaseous phase complexing reagent B, said method comprising the steps of: (a) providing a solid phase complex AX in a reservoir having a capillary diffusion path with a first end connected thereto; (b) providing a controlled partial vapour pressure of a gaseous phase complexing reagent B at an opposite second end of said capillary diffusion path; (c) conducting said gaseous phase complexing agent B from said second end of said capillary diffusion path to said first end of said capillary diffusion path wherein the reaction AX+B→BX+A occurs in said reservoir; (d) conducting said gaseous phase complex BX produced by said reaction from said first end of said capillary diffusion path to said second end of said capillary diffusion path, and (e) conducting said gaseous phase complex BX from said second end of said capillary diffusion path to a metal organic vapour phase epitaxy growth process, whereby the mass flow rate of BX to the metal organic vapour phase epitaxy growth process is controlled, at least in part, by controlling said partial vapour pressure of B at said second end of said capillary diffusion path.
Claim 2
Independent Claim
244 words
A method of growing a semiconductor product by metal organic vapour phase epitaxy, which method includes providing a controlled mass flow rate of an organo-metallic reagent X into a metal organic vapour phase epitaxy reaction wherein the reagent X is in the form of a gaseous phase complex BX that is produced from a solid phase complex AX and a gaseous phase complexing reagent B, said method comprising the steps of: (a) providing a solid phase complex AX in a reservoir having a capillary diffusion path with a first end connected thereto; (b) providing a controlled partial vapour pressure of a gaseous phase complexing reagent B at an opposite second end of said capillary diffusion path; (c) conducting said gaseous phase complexing agent B from said second end of said capillary diffusion path to said first end of said capillary diffusion path wherein the reaction AX+B→BX+A occurs in said reservoir; (d) conducting said gaseous phase complex BX produced by said reaction from said first end of said capillary diffusion path to said second end of said capillary diffusion path, and (e) conducting said gaseous phase complex BX from said second end of said capillary diffusion path to a metal organic vapour phase epitaxy growth process, whereby the mass flow rate of BX to the metal organic vapour phase epitaxy growth process is controlled, at least in part, by controlling said partial vapour pressure of B at said second end of said capillary diffusion path.
Claim 3
Dependent Claim
47 words
A method according to claim 1, in which A is (C 6 H 5 ) 2 PC 2 H 4 P(C 6 H 5 ) 2 , B is an amine, and X is selected from the group consisting of indium trialkyls, aluminum trialkyls and gallium trialkyls.
Claim 4
Dependent Claim
10 words
A method according to claim 1, wherein B is trimethylamine.