Field emission device employing a selective electrode deposition method

Claim 1

A method of forming a field emission device including the steps of: providing a supporting substrate having a major surface; depositing a first insulator layer on the major surface of the supporting substrate; depositing a first conductive layer on the first insulator layer; providing a second insulator layer on the first conductive layer; providing a selectively patterned etch mask on the second insulator layer; performing a directed or anisotropic etch on areas not masked by the selectively patterned etch mask to remove part of each of the first insulator layer, the first conductive layer, and the second insulator layer to define a cavity therethrough to the supporting substrate; removing the remaining selectively patterned etch mask; substantially conformally depositing a third insulator layer onto any exposed surfaces of each of the supporting substrate, the first insulator layer, the first conductive layer, and the second insulator layer; performing a directed or anisotropic etch of the third insulator layer to remove the third insulator layer covering the supporting substrate within the cavity; selectively depositing a second layer of conductive material on the exposed major surface of the supporting substrate within the cavity so as to form a first substantially cylindrical column within the cavity; and performing a substantially normal deposition of a third layer of conductive material on the second layer of conductive material in the cavity to provide a substantially conically shaped layer of material disposed on the first substantially cylindrical column, such that a field emission device structure is realized including an electron emitter, a gate extraction electrode, and an anode.

Claim 2

A method of forming a field emission device including the steps of: providing a supporting substrate having a major surface; depositing a first insulator layer on the major surface of the supporting substrate; depositing a first conductive layer on the first insulator layer; providing a second insulator layer on the first conductive layer; providing a selectively patterned etch mask on the second insulator layer; performing a directed or anisotropic etch on areas not masked by the selectively patterned etch mask to remove part of each of the first insulator layer, the first conductive layer, and the second insulator layer to define a cavity therethrough to the supporting substrate; removing the remaining selectively patterned etch mask; substantially conformally depositing a third insulator layer onto any exposed surfaces of each of the supporting substrate, the first insulator layer, the first conductive layer, and the second insulator layer; performing a directed or anisotropic etch of the third insulator layer to remove the third insulator layer covering the supporting substrate within the cavity; selectively depositing a second layer of conductive material on the exposed major surface of the supporting substrate within the cavity so as to form a first substantially cylindrical column within the cavity; and performing a substantially normal deposition of a third layer of conductive material on the second layer of conductive material in the cavity to provide a substantially conically shaped layer of material disposed on the first substantially cylindrical column, such that a field emission device structure is realized including an electron emitter, a gate extraction electrode, and an anode.

Claim 3

A method of forming a field emission device including the steps of: providing a supporting substrate having a major surface; depositing a first insulator layer on the major surface of the supporting substrate; depositing a first conductive layer on the first insulator layer; providing a second insulator layer on the first conductive layer; providing a selectively patterned etch mask on the second insulator layer; performing a directed or anisotropic etch on areas not masked by the selectively patterned etch mask to remove part of each of the first insulator layer, the first conductive layer, and the second insulator layer to define a cavity therethrough to the supporting substrate; removing the remaining selectively patterned etch mask; substantially conformally depositing a third insulator layer onto any exposed surfaces of each of the supporting substrate, the first insulator layer, the first conductive layer, and the second insulator layer; performing a directed or anisotropic etch of the third insulator layer to remove the third insulator layer covering the supporting substrate within the cavity; selectively depositing a second layer of conductive material on the exposed major surface of the supporting substrate within the cavity so as to form a first substantially elongated ridge within the cavity; and performing a substantially normal deposition of a third layer of conductive material on the second layer of conductive material in the cavity to provide a substantially wedge shaped layer of material disposed on the first substantially elongated ridge, such that a field emission device structure is realized including an electron emitter, a gate extraction electrode, and an anode.

Claim 4

A method of forming a field emission device including the steps of: providing a supporting substrate having a major surface; depositing a first insulator layer on the major surface of the supporting substrate; depositing a first conductive layer on the first insulator layer; providing a second insulator layer on the first conductive layer; providing a selectively patterned etch mask on the second insulator layer; performing a directed or anisotropic etch on areas not masked by the selectively patterned etch mask to remove part of each of the first insulator layer, the first conductive layer, and the second insulator layer to define a cavity therethrough to the supporting substrate; removing the remaining selectively patterned etch mask; substantially conformally depositing a third insulator layer onto any exposed surfaces of each of the supporting substrate, the first insulator layer, the first conductive layer, and the second insulator layer; performing a directed or anisotropic etch of the third insulator layer to remove the third insulator layer covering the supporting substrate within the cavity; selectively depositing a second layer of conductive material on the exposed major surface of the supporting substrate within the cavity so as to form a first substantially elongated ridge within the cavity; and performing a substantially normal deposition of a third layer of conductive material on the second layer of conductive material in the cavity to provide a substantially wedge shaped layer of material disposed on the first substantially elongated ridge, such that a field emission device structure is realized including an electron emitter, a gate extraction electrode, and an anode.

Claim 5

A method of forming a field emission device including the steps of: providing a supporting substrate having a major surface; depositing a first selectively patterned conductive layer on the major surface of the supporting substrate; depositing a first insulator layer on any exposed part of the major surface of the supporting substrate and the first conductive layer; depositing a second conductive layer on the first insulator layer; providing a second insulator layer on the second conductive layer; providing a selectively patterned etch mask on the second insulator layer; performing a directed or anisotropic etch, using the selectively patterned etch mask, to remove part of each of the first insulator layer, the second conductive layer, and the second insulator layer and form a cavity therethrough at least to the first conductive layer; removing the remaining selectively patterned etch mask; substantially conformally depositing a third insulator layer onto any exposed surfaces of each of the supporting substrate, the first selectively patterned conductive layer, the first insulator layer, the second conductive layer, and the second insulator layer; performing a directed or anisotropic etch of the third insulator layer to leave only sides of the cavity covered by the third insulator layer and an exposed surface of the first selectively patterned conductive layer within the cavity; selectively depositing a third layer of conductive material on the first selectively patterned conductive layer within the cavity so as to form a first substantially elongated ridge within the cavity; and performing a substantially normal deposition of a fourth layer of conductive material on exposed surfaces of the device, including the third layer of conductive material to provide a substantially wedge shaped layer of material disposed on the first substantially elongated ridge, such that a field emission device structure is realized including an electron emitter, a gate extraction electrode, and an anode.

Claim 6

A method of forming a field emission device including the steps of: providing a supporting substrate having a major surface; depositing a first selectively patterned conductive layer on the major surface of the supporting substrate; depositing a first insulator layer on any exposed part of the major surface of the supporting substrate and the first conductive layer; depositing a second conductive layer on the first insulator layer; providing a second insulator layer on the second conductive layer; providing a selectively patterned etch mask on the second insulator layer; performing a directed or anisotropic etch, using the selectively patterned etch mask, to remove part of each of the first insulator layer, the second conductive layer, and the second insulator layer and form a cavity therethrough at least to the first conductive layer; removing the remaining selectively patterned etch mask; substantially conformally depositing a third insulator layer onto any exposed surfaces of each of the supporting substrate, the first selectively patterned conductive layer, the first insulator layer, the second conductive layer, and the second insulator layer; performing a directed or anisotropic etch of the third insulator layer to leave only sides of the cavity covered by the third insulator layer and an exposed surface of the first selectively patterned conductive layer within the cavity; selectively depositing a third layer of conductive material on the first selectively patterned conductive layer within the cavity so as to form a first substantially elongated ridge within the cavity; and performing a substantially normal deposition of a fourth layer of conductive material on exposed surfaces of the device, including the third layer of conductive material to provide a substantially wedge shaped layer of material disposed on the first substantially elongated ridge, such that a field emission device structure is realized including an electron emitter, a gate extraction electrode, and an anode.

Claim 7

A method of forming a field emission device including the steps of: providing a supporting substrate having a major surface; depositing a first insulator layer on the major surface of the supporting substrate; depositing a first conductive layer on the first insulator layer; providing a second insulator layer on the first conductive layer; providing a selectively patterned etch mask on the second insulator layer; performing a directed or anisotropic etch, using the selectively patterned etch mask, to remove part of each of the first insulator layer, the first conductive layer, and the second insulator layer to form a cavity extending to at least the major surface of the supporting substrate; removing the remaining selectively patterned etch mask; substantially conformally depositing a third insulator layer on any exposed surfaces of each of the supporting substrate, the first insulator layer, the first conductive layer, and the second insulator layer; performing a directed or anisotropic etch of the third insulator layer to expose the supporting substrate within the cavity; selectively depositing a second layer of conductive material on the exposed supporting substrate within the cavity so as to form a first substantially elongated ridge within the cavity; performing a substantially normal deposition of a third layer of conductive material on the second layer of conductive material to provide a substantially wedge shaped layer of material disposed on the first substantially elongated ridge, removing the second insulator layer; and removing at least some of the remaining part of the third insulator layer, such that a field emission device structure is realized including an electron emitter and a gate extraction electrode formed substantially symmetrically, peripherally at least partially about the electron emitter.

Claim 8

A method of forming a field emission device including the steps of: providing a supporting substrate having a major surface; depositing a first insulator layer on the major surface of the supporting substrate; depositing a first conductive layer on the first insulator layer; providing a second insulator layer on the first conductive layer; providing a selectively patterned etch mask on the second insulator layer; performing a directed or anisotropic etch, using the selectively patterned etch mask, to remove part of each of the first insulator layer, the first conductive layer, and the second insulator layer to form a cavity extending to at least the major surface of the supporting substrate; removing the remaining selectively patterned etch mask; substantially conformally depositing a third insulator layer on any exposed surfaces of each of the supporting substrate, the first insulator layer, the first conductive layer, and the second insulator layer; performing a directed or anisotropic etch of the third insulator layer to expose the supporting substrate within the cavity; selectively depositing a second layer of conductive material on the exposed supporting substrate within the cavity so as to form a first substantially elongated ridge within the cavity; performing a substantially normal deposition of a third layer of conductive material on the second layer of conductive material to provide a substantially wedge shaped layer of material disposed on the first substantially elongated ridge, removing the second insulator layer; and removing at least some of the remaining part of the third insulator layer, such that a field emission device structure is realized including an electron emitter and a gate extraction electrode formed substantially symmetrically, peripherally at least partially about the electron emitter.

Claim 9

A method of forming a field emission device including the steps of: providing a supporting substrate having a major surface; depositing a first selectively patterned conductive layer on the major surface of the supporting substrate; depositing a first insulator layer on the exposed parts of the major surface of the supporting substrate; depositing a second conductive layer on the first insulator layer; providing a second insulator layer on the second conductive layer; providing a selectively patterned etch mask on the second insulator layer; performing a directed or anisotropic etch, using the selectively patterned etch mask, to remove part of each of the first insulator layer, the second conductive layer, and the second insulator layer to form a cavity therethrough to at least the major surface of the supporting substrate; removing the remaining selectively patterned etch mask; substantially conformally depositing a third insulator layer on any exposed surfaces of each of the supporting substrate, the first selectively patterned conductive layer, the first insulator layer, the second conductive layer, and the second insulator layer; performing a directed or anisotropic etch of the third insulator layer to expose the first selectively patterned conductive layer within the cavity; selectively depositing a third layer of conductive material on the exposed first selectively patterned conductive layer within the cavity so as to form a substantially elongated ridge within the cavity; performing a substantially normal deposition of a fourth layer of conductive material on the third layer of conductive material within the cavity to form a substantially wedge shaped layer of material on the substantially elongated ridge; removing the second insulator layer; and removing the remaining part of the third insulator layer to form a field emission device including an electron emitter and a gate extraction electrode.

Claim 10

A method of forming a field emission device including the steps of: providing a supporting substrate having a major surface; depositing a first selectively patterned conductive layer on the major surface of the supporting substrate; depositing a first insulator layer on the exposed parts of the major surface of the supporting substrate; depositing a second conductive layer on the first insulator layer; providing a second insulator layer on the second conductive layer; providing a selectively patterned etch mask on the second insulator layer; performing a directed or anisotropic etch, using the selectively patterned etch mask, to remove part of each of the first insulator layer, the second conductive layer, and the second insulator layer to form a cavity therethrough to at least the major surface of the supporting substrate; removing the remaining selectively patterned etch mask; substantially conformally depositing a third insulator layer on any exposed surfaces of each of the supporting substrate, the first selectively patterned conductive layer, the first insulator layer, the second conductive layer, and the second insulator layer; performing a directed or anisotropic etch of the third insulator layer to expose the first selectively patterned conductive layer within the cavity; selectively depositing a third layer of conductive material on the exposed first selectively patterned conductive layer within the cavity so as to form a substantially elongated ridge within the cavity; performing a substantially normal deposition of a fourth layer of conductive material on the third layer of conductive material within the cavity to form a substantially wedge shaped layer of material on the substantially elongated ridge; removing the second insulator layer; and removing the remaining part of the third insulator layer to form a field emission device including an electron emitter and a gate extraction electrode.

Claim 11

A method of forming a field emission device including the steps of: providing a supporting substrate having a major surface; depositing a first selectively patterned conductive layer on the major surface of the supporting substrate; depositing a first insulator layer on any exposed part of the major surface of the supporting substrate and the first conductive layer; depositing a second conductive layer on the first insulator layer; providing a second insulator layer on the second conductive layer; providing a selectively patterned etch mask on the second insulator layer; performing a directed or anisotropic etch, using the selectively patterned etch mask, to remove part of each of the first insulator layer, the second conductive layer, and the second insulator layer and form a cavity therethrough at least to the first conductive layer; removing the remaining selectively patterned etch mask; substantially conformally depositing a third insulator layer onto any exposed surfaces of each of the supporting substrate, the first selectively patterned conductive layer, the first insulator layer, the second conductive layer, and the second insulator layer; performing a directed or anisotropic etch of the third insulator layer to leave only sides of the cavity covered by the third insulator layer and an exposed surface of the first selectively patterned conductive layer within the cavity; selectively depositing a third layer of conductive material on the first selectively patterned conductive layer within the cavity so as to form a first substantially cylindrical column within the cavity; and performing a substantially normal deposition of a fourth layer of conductive material on exposed surfaces of the device, including the third layer of conductive material to provide a substantially conically shaped layer of material disposed on the first substantially cylindrical column, such that a field emission device structure is realized including an electron emitter, a gate extraction electrode, and an anode.

Claim 12

A method of forming a field emission device including the steps of: providing a supporting substrate having a major surface; depositing a first selectively patterned conductive layer on the major surface of the supporting substrate; depositing a first insulator layer on any exposed part of the major surface of the supporting substrate and the first conductive layer; depositing a second conductive layer on the first insulator layer; providing a second insulator layer on the second conductive layer; providing a selectively patterned etch mask on the second insulator layer; performing a directed or anisotropic etch, using the selectively patterned etch mask, to remove part of each of the first insulator layer, the second conductive layer, and the second insulator layer and form a cavity therethrough at least to the first conductive layer; removing the remaining selectively patterned etch mask; substantially conformally depositing a third insulator layer onto any exposed surfaces of each of the supporting substrate, the first selectively patterned conductive layer, the first insulator layer, the second conductive layer, and the second insulator layer; performing a directed or anisotropic etch of the third insulator layer to leave only sides of the cavity covered by the third insulator layer and an exposed surface of the first selectively patterned conductive layer within the cavity; selectively depositing a third layer of conductive material on the first selectively patterned conductive layer within the cavity so as to form a first substantially cylindrical column within the cavity; and performing a substantially normal deposition of a fourth layer of conductive material on exposed surfaces of the device, including the third layer of conductive material to provide a substantially conically shaped layer of material disposed on the first substantially cylindrical column, such that a field emission device structure is realized including an electron emitter, a gate extraction electrode, and an anode.

Claim 14

A method of forming a field emission device including the steps of: providing a supporting substrate having a major surface; depositing a first insulator layer on the major surface of the supporting substrate; depositing a first conductive layer on the first insulator layer; providing a second insulator layer on the first conductive layer; providing a selectively patterned etch mask on the second insulator layer; performing a directed or anisotropic etch, using the selectively patterned etch mask, to remove part of each of the first insulator layer, the first conductive layer, and the second insulator layer to form a cavity extending to at least the major surface of the supporting substrate; removing the remaining selectively patterned etch mask; substantially conformally depositing a third insulator layer on any exposed surfaces of each of the supporting substrate, the first insulator layer, the first conductive layer, and the second insulator layer; performing a directed or anisotropic etch of the third insulator layer to expose the supporting substrate within the cavity; selectively depositing a second layer of conductive material on the exposed supporting substrate within the cavity so as to form a first substantially cylindrical column within the cavity; performing a substantially normal deposition of a third layer of conductive material on the second layer of conductive material to provide a substantially conically shaped layer of material disposed on the first substantially cylindrical column, removing the second insulator layer; and removing at least some of the remaining part of the third insulator layer, such that a field emission device structure is realized including an electron emitter and a gate extraction electrode formed substantially symmetrically, peripherally at least partially about the electron emitter.

Claim 15

A method of forming a field emission device including the steps of: providing a supporting substrate having a major surface; depositing a first insulator layer on the major surface of the supporting substrate; depositing a first conductive layer on the first insulator layer; providing a second insulator layer on the first conductive layer; providing a selectively patterned etch mask on the second insulator layer; performing a directed or anisotropic etch, using the selectively patterned etch mask, to remove part of each of the first insulator layer, the first conductive layer, and the second insulator layer to form a cavity extending to at least the major surface of the supporting substrate; removing the remaining selectively patterned etch mask; substantially conformally depositing a third insulator layer on any exposed surfaces of each of the supporting substrate, the first insulator layer, the first conductive layer, and the second insulator layer; performing a directed or anisotropic etch of the third insulator layer to expose the supporting substrate within the cavity; selectively depositing a second layer of conductive material on the exposed supporting substrate within the cavity so as to form a first substantially cylindrical column within the cavity; performing a substantially normal deposition of a third layer of conductive material on the second layer of conductive material to provide a substantially conically shaped layer of material disposed on the first substantially cylindrical column, removing the second insulator layer; and removing at least some of the remaining part of the third insulator layer, such that a field emission device structure is realized including an electron emitter and a gate extraction electrode formed substantially symmetrically, peripherally at least partially about the electron emitter.

Claim 16

A method of forming a field emission device including the steps of: providing a supporting substrate having a major surface; depositing a first selectively patterned conductive layer on the major surface of the supporting substrate; depositing a first insulator layer on the exposed parts of the major surface of the supporting substrate; depositing a second conductive layer on the first insulator layer; providing a second insulator layer on the second conductive layer; providing a selectively patterned etch mask on the second insulator layer; performing a directed or anisotropic etch, using the selectively patterned etch mask, to remove part of each of the first insulator layer, the second conductive layer, and the second insulator layer to form a cavity therethrough to at least the major surface of the supporting substrate; removing the remaining selectively patterned etch mask; substantially conformally depositing a third insulator layer on any exposed surfaces of each of the supporting substrate, the first selectively patterned conductive layer, the first insulator layer, the second conductive layer, and the second insulator layer; performing a directed or anisotropic etch of the third insulator layer to expose the first selectively patterned conductive layer within the cavity; selectively depositing a third layer of conductive material on the exposed first selectively patterned conductive layer within the cavity so as to form a substantially cylindrical column within the cavity; performing a substantially normal deposition of a fourth layer of conductive material on the third layer of conductive material within the cavity to form a substantially conically shaped layer of material on the substantially cylindrical column; removing the second insulator layer; and removing the remaining part of the third insulator layer to form a field emission device including an electron emitter and a gate extraction electrode.

Claim 17

A method of forming a field emission device including the steps of: providing a supporting substrate having a major surface; depositing a first selectively patterned conductive layer on the major surface of the supporting substrate; depositing a first insulator layer on the exposed parts of the major surface of the supporting substrate; depositing a second conductive layer on the first insulator layer; providing a second insulator layer on the second conductive layer; providing a selectively patterned etch mask on the second insulator layer; performing a directed or anisotropic etch, using the selectively patterned etch mask, to remove part of each of the first insulator layer, the second conductive layer, and the second insulator layer to form a cavity therethrough to at least the major surface of the supporting substrate; removing the remaining selectively patterned etch mask; substantially conformally depositing a third insulator layer on any exposed surfaces of each of the supporting substrate, the first selectively patterned conductive layer, the first insulator layer, the second conductive layer, and the second insulator layer; performing a directed or anisotropic etch of the third insulator layer to expose the first selectively patterned conductive layer within the cavity; selectively depositing a third layer of conductive material on the exposed first selectively patterned conductive layer within the cavity so as to form a substantially cylindrical column within the cavity; performing a substantially normal deposition of a fourth layer of conductive material on the third layer of conductive material within the cavity to form a substantially conically shaped layer of material on the substantially cylindrical column; removing the second insulator layer; and removing the remaining part of the third insulator layer to form a field emission device including an electron emitter and a gate extraction electrode.