US5247223A
Expired / Lapsed
US
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Quantum interference semiconductor device
Assignee: Sony Corp
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Filing: 1991-07-01
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Granted: 1993-09-21
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Expires: 2011-07-01
Abstract
Abstract A quantum interference semiconductor device using the interference effect of electron waves has a cathode, an anode, and a gate which are mounted in a vacuum. An electron wave which is emitted from the cathode into the vacuum is divided into a plurality of electron waves and, subsequently, the plurality of electron waves are combined at the anode. Phase differences among the plurality of electron waves are controlled by the gate, thereby making the device operative.
Inventors
- 👤 Yoshifumi Mori
- 👤 Akira Ishibashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:35
CPC Classifications
H; H01; H01J; H01J21/00; H01J21/02; H01J21/06; H01J21/10; H01J21/105; H01J9/00; H01J9/02; H01J9/022; H01J9/025
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
107 words
A quantum interference semiconductor device which uses an interference effect of electron waves comprising, a cathode and an anode spaced from each other and mounted in a vacuum chamber, a blocker mounted in said vacuum chamber between said cathode and said cathode so as to split an electron beam emitted from said cathode into at least two partial electron beams, and at least a first gate electrode mounted in said vacuum chamber adjacent said blocker so as to modulate one of said at least two partial electron beams, wherein said two partial electron beams are recombined in the space between said anode and said blocker at least.
Claim 2
Dependent Claim
107 words
A quantum interference semiconductor device which uses an interference effect of electron waves comprising, a cathode and an anode spaced from each other and mounted in a vacuum chamber, a blocker mounted in said vacuum chamber between said cathode and said cathode so as to split an electron beam emitted from said cathode into at least two partial electron beams, and at least a first gate electrode mounted in said vacuum chamber adjacent said blocker so as to modulate one of said at least two partial electron beams, wherein said two partial electron beams are recombined in the space between said anode and said blocker at least.
Claim 3
Dependent Claim
52 words
A quantum interference semiconductor device which uses an interference effect of electron waves according to claim 1 further including a second gate electrode mounted in said vacuum chamber adjacent said blocker on the side opposite to said first gate electrode so as to modulate the other one of said two partial beams.
Claim 4
Dependent Claim
17 words
A device according to claim 1 or 2, wherein said cathode is a field emission electron source.
Claim 5
Dependent Claim
24 words
A device according to claim 3, wherein said field emission electron source has a sharp edge portion which is defined by a crystal face.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-09-20 | 1997-03-22 | 1997-09-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-09-20 | 2001-03-22 | 2001-09-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-09-20 | 2005-03-22 | 2005-09-21 | $7700.00 | Window Closed / Lapsed |