US5247192A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Heterojunction bipolar transistor
Assignee: Rohm Co Ltd
•
Filing: 1992-06-19
•
Granted: 1993-09-21
•
Expires: 2012-06-19
Abstract
Abstract A heterojunction bipolar transistor comprising a semiconductor substrate of a first conductive-type, a first conductive-type layer of 3c-SiC, a second conductive-type layer of Si and another first conductive-type layer of 3c-SiC. The two first conductive-type layers serve respectively as collector region and emitter region and the second conductive-type layer serves as base region, and a method for producing the same. A transistor of the present invention is effective for devices such as I 2 L circuit wherein reverse directional operation of transistor is utilized.
Inventors
- 👤 Keita Nii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 01:49
CPC Classifications
H; H10; H10D; H10D12/00; H10D12/01; H10D12/031; H10D10/00; H10D10/80; H10D10/821; H10D10/861; H10D10/01; H10D10/021; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
94 words
A heterojunction bipolar transistor wherein: on a semiconductor substrate of a first conductive-type, a first conductive-type layer of 3c-SiC, a second conductive-type layer of Si and another first conductive-type layer 3c-SiC are formed in this order so that the two first conductive-type layers serve respectively as collector region and emitter region and the second conductive-type layer serves as base region, and wherein an electrically conductive film is sandwiched between insulating films and is connected with a side wall of the second conductive-type layer, and a base electrode is connected with the electrically conductive film.
Claim 2
Dependent Claim
94 words
A heterojunction bipolar transistor wherein: on a semiconductor substrate of a first conductive-type, a first conductive-type layer of 3c-SiC, a second conductive-type layer of Si and another first conductive-type layer 3c-SiC are formed in this order so that the two first conductive-type layers serve respectively as collector region and emitter region and the second conductive-type layer serves as base region, and wherein an electrically conductive film is sandwiched between insulating films and is connected with a side wall of the second conductive-type layer, and a base electrode is connected with the electrically conductive film.
References Cited (Backward Citations)
GB2073486A
Cited
JPS62216364A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-09-20 | 1997-03-22 | 1997-09-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-09-20 | 2001-03-22 | 2001-09-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-09-20 | 2005-03-22 | 2005-09-21 | $7700.00 | Window Closed / Lapsed |