US5236550A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for plasma etch of ruthenium
Assignee: National Semiconductor Corp
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Filing: 1992-04-24
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Granted: 1993-08-17
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Expires: 2012-04-24
Abstract
Abstract The present invention provides a process for patterning ruthenium. A layer of ruthenium is formed on a substrate. The ruthenium is masked. The ruthenium is exposed to an oxygen plasma.
Inventors
- 👤 Norman E. Abt
- 👤 William H. Shepherd
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:47
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; C; C23; C23F; C23F4/00
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
13 words
A process for etching ruthenium, comprising exposing the ruthenium to an oxygen plasma.
Claim 2
Dependent Claim
13 words
A process for etching ruthenium, comprising exposing the ruthenium to an oxygen plasma.
Claim 3
Dependent Claim
28 words
A process for patterning ruthenium, comprising: a. forming a layer of ruthenium on a substrate; b. masking the ruthenium; and c. exposing the ruthenium to an oxygen plasma.
Claim 4
Dependent Claim
28 words
A process for patterning ruthenium, comprising: a. forming a layer of ruthenium on a substrate; b. masking the ruthenium; and c. exposing the ruthenium to an oxygen plasma.
References Cited (Backward Citations)
JPS6477509A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-08-16 | 1997-02-15 | 1997-08-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-16 | 2001-02-15 | 2001-08-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-16 | 2005-02-15 | 2005-08-17 | $7700.00 | Window Closed / Lapsed |