US5233259A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Lateral field FBAR
Assignee: Round Rock Research LLC
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Filing: 1991-02-19
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Granted: 1993-08-03
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Expires: 2011-02-19
Abstract
Abstract This invention is a design for lateral field film bulk acoustic resonators (LF-FBAR). All electrodes in this design are located on one surface of the piezoelectric material, thereby simplifying manufacturing and improving performance. The gap between electrodes is limited to a specified dimension to maximize the efficiency of the device. Single and multi-pole devices are described. Barium magnesium fluoride and lithium niobate are specified as the piezoelectric material for high frequency applications.
Inventors
- 👤 S. Visvanathan Krishnaswamy
- 👤 Robert W. Weinert
- 👤 John D. Adam
- 👤 John M. Walker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 20:12
CPC Classifications
H; H03; H03H; H03H9/00; H03H9/15; H03H9/17; H03H9/171; H03H9/172; H10; H10N; H10N30/00; H10N30/80; H10N30/85; H10N30/853; H10N30/8536; H10N30/8542
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
85 words
A lateral field film bulk acoustic resonator comprising: piezoelectric means operable to transform electrical energy to acoustic energy, said piezoelectric means having a thickness T p ; substrate means operable to support said piezoelectric means, said substrate means having a thickness T s ; at least two electrodes disposed on one surface of said piezoelectric means, said electrodes coupled by lateral excitation of said piezoelectric means, wherein said electrodes are separated by a gap no greater than 3T p 2 /(T p +T s ).
Claim 2
Dependent Claim
85 words
A lateral field film bulk acoustic resonator comprising: piezoelectric means operable to transform electrical energy to acoustic energy, said piezoelectric means having a thickness T p ; substrate means operable to support said piezoelectric means, said substrate means having a thickness T s ; at least two electrodes disposed on one surface of said piezoelectric means, said electrodes coupled by lateral excitation of said piezoelectric means, wherein said electrodes are separated by a gap no greater than 3T p 2 /(T p +T s ).
Claim 3
Dependent Claim
19 words
A lateral field film bulk acoustic resonator as in claim 1, wherein said piezoelectric means is barium magnesium fluoride.
Claim 4
Dependent Claim
73 words
A lateral field film bulk acoustic resonator comprising: piezoelectric means operable to transform electrical energy to acoustic energy, said piezoelectric means having a thickness T p ; substrate means operable to support said piezoelectric means, said substrate means having a thickness T s ; an input electrode, an output electrode, and a ground electrode disposed on one surface of said piezoelectric means, said ground electrode being disposed between said input and output electrodes.
Claim 5
Dependent Claim
73 words
A lateral field film bulk acoustic resonator comprising: piezoelectric means operable to transform electrical energy to acoustic energy, said piezoelectric means having a thickness T p ; substrate means operable to support said piezoelectric means, said substrate means having a thickness T s ; an input electrode, an output electrode, and a ground electrode disposed on one surface of said piezoelectric means, said ground electrode being disposed between said input and output electrodes.
Claim 6
Dependent Claim
40 words
A lateral field film bulk acoustic resonator as in claim 3, wherein the gaps separating said ground electrode from said input and said output electrodes each have a dimension no greater than 3T p 2 /(T p +T s ).
Claim 7
Dependent Claim
22 words
A lateral field film bulk acoustic resonator as in claim 3, wherein said piezoelectric means is barium magnesium fluoride or lithium niobate.
Claim 8
Dependent Claim
97 words
A lateral field film bulk acoustic resonator comprising: a dielectric substrate having a thickness T s disposed on a layer of semiconductor material and spanning an opening in said semiconductor material; a piezoelectric layer having a top surface, a bottom surface, and a thickness T p , said bottom surface disposed on said dielectric substrate opposed said opening in said semiconductor material; an input electrode and an output electrode disposed on said top surface of said piezoelectric layer, further comprising said input electrode and said output electrode being coupled by lateral field excitation of said piezoelectric layer.
Claim 9
Dependent Claim
97 words
A lateral field film bulk acoustic resonator comprising: a dielectric substrate having a thickness T s disposed on a layer of semiconductor material and spanning an opening in said semiconductor material; a piezoelectric layer having a top surface, a bottom surface, and a thickness T p , said bottom surface disposed on said dielectric substrate opposed said opening in said semiconductor material; an input electrode and an output electrode disposed on said top surface of said piezoelectric layer, further comprising said input electrode and said output electrode being coupled by lateral field excitation of said piezoelectric layer.
Claim 10
Dependent Claim
36 words
A lateral field film bulk acoustic layer as in claim 6, wherein said input and output electrodes are separated by a gap having a dimension no greater than 3T p 2 /(T s +T p ).
Claim 11
Dependent Claim
22 words
A lateral field film bulk acoustic resonator as in claim 6, wherein said piezoelectric layer is barium magnesium fluoride or lithium niobate.
Claim 12
Dependent Claim
19 words
A lateral field film bulk acoustic resonator as in claim 6, wherein said dielectric substrate is spinel or sapphire.
Claim 13
Dependent Claim
92 words
A lateral field film bulk acoustic resonator comprising: a dielectric substrate having a thickness T s disposed on a layer of semiconductor material and spanning an opening in said semiconductor material; a piezoelectric layer having a top surface, a bottom surface, and a thickness T p , said bottom surface disposed on said dielectric membrane opposed said opening in said semiconductor material. an input electrode, an output electrode and a ground electrode disposed on said top surface of said piezoelectric layer, said ground electrode being disposed between said input and output electrodes.
Claim 14
Dependent Claim
92 words
A lateral field film bulk acoustic resonator comprising: a dielectric substrate having a thickness T s disposed on a layer of semiconductor material and spanning an opening in said semiconductor material; a piezoelectric layer having a top surface, a bottom surface, and a thickness T p , said bottom surface disposed on said dielectric membrane opposed said opening in said semiconductor material. an input electrode, an output electrode and a ground electrode disposed on said top surface of said piezoelectric layer, said ground electrode being disposed between said input and output electrodes.
Claim 15
Dependent Claim
40 words
A lateral field film bulk acoustic resonator as in claim 10, wherein the gaps separating said ground electrode from said input and said output electrodes each have a dimension no greater than 3T p 2 /(T p +T s ).
Claim 16
Dependent Claim
22 words
A lateral field film bulk acoustic resonator as in claim 10, wherein said piezoelectric layer is barium magnesium fluoride or lithium niobate.
Claim 17
Dependent Claim
19 words
A lateral field film bulk acoustic resonator as in claim 10, wherein said dielectric substrate is spinel or sapphire.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-08-02 | 1997-02-01 | 1997-08-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-02 | 2001-02-01 | 2001-08-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-02 | 2005-02-01 | 2005-08-03 | $7700.00 | Window Closed / Lapsed |