US5232867A
Expired / Lapsed
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Method for the making of optoelectronic semiconductor devices
Assignee: Thales SA
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Filing: 1992-04-10
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Granted: 1993-08-03
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Expires: 2012-04-10
Abstract
Abstract A method for the making of an optoelectronic device comprising at least one quantum well, the barriers of which are made of GaInP and the well of which is made of GaAs, is carried out by the interdiffusion of elements between barriers and quantum wells in such a way that there is a migration of at least indium elements from a barrier to the quantum well. The method can be applied to the making of quantum well lasers, photodetectors and optical guides.
Inventors
- 👤 Baudouin DE Cremoux
- 👤 Manijeh Razeghi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 14:05
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/183; H01S5/18308; H01S5/30; H01S5/34; H01S5/343; H01S5/34313; H10F; H10F77/00; H10F77/10; H10F77/14; H10F77/146; H10H20/01; H10H20/011; H10H20/013; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3824; H01S5/20; H01S5/2054; H01S5/2059; H01S5/2072; H01S5/3407; H01S5/3413; H01S5/3414; Y; Y10; Y10S; Y10S148/00; Y10S148/16
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
69 words
A method for the making of optoelectronic semiconductor devices, wherein said method comprises the making of at least one semiconductor quantum well, the barriers of which are made of GaInP and the material of the well of which is GaAs, followed by an interdiffusion of elements between barriers and quantum wells so that there is a migration of at least indium elements from this barrier towards the quantum well.
Claim 2
Independent Claim
69 words
A method for the making of optoelectronic semiconductor devices, wherein said method comprises the making of at least one semiconductor quantum well, the barriers of which are made of GaInP and the material of the well of which is GaAs, followed by an interdiffusion of elements between barriers and quantum wells so that there is a migration of at least indium elements from this barrier towards the quantum well.
Claim 3
Dependent Claim
21 words
A method according to claim 1, wherein the interdiffusion is done by the diffusion of impurities or the implantation of elements.
Claim 4
Dependent Claim
28 words
A method according to claim 2, wherein the diffusion or the implantation is preceded by the making of a mask through which the diffusion or implantation is done.
Claim 5
Dependent Claim
30 words
A method according to claim 2, wherein the diffusion of impurities is done by means of zinc which prompts the migration of indium elements to the material of the well.
Claim 6
Dependent Claim
34 words
A method according to claim 2, wherein the implantation of impurities is done by means of silicon or germanium which prompts the migration of In and P elements to the material of the well.
Claim 7
Dependent Claim
18 words
A method according to claim 1, comprising the making of a stack of quantum wells (multiple quantum wells).
Claim 8
Dependent Claim
45 words
A method according to claim 1, wherein said method is preceded by the making of a first stack of layers acting as a Bragg reflector and wherein it is ended by the making of a second stack of layers also acting as a Bragg reflector.
Claim 9
Dependent Claim
17 words
A method according to claim 1, enabling the making of a laser by the diffusion of impurities.
Claim 10
Dependent Claim
14 words
A method according to claim 1, enabling the making of a laser by implantation.
Claim 11
Dependent Claim
24 words
A method according to claim 1, enabling the making of a laser by diffusion and of a guide on one and the same substrate.
Claim 12
Dependent Claim
24 words
A method according to claim 1, enabling the making of a guide by implantation and of a laser on one and the same substrate.
Claim 13
Dependent Claim
36 words
A method according to claim 1, enabling the making, on one and the same substrate, of a laser by diffusion, a photodetector by implantation and a guide in zones subjected neither to diffusion nor to implantation.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-08-02 | 1997-02-01 | 1997-08-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-02 | 2001-02-01 | 2001-08-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-02 | 2005-02-01 | 2005-08-03 | $7700.00 | Window Closed / Lapsed |