US5231606A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Field emitter array memory device
Assignee: United States Department of the Navy
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Filing: 1990-07-02
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Granted: 1993-07-27
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Expires: 2010-07-02
Abstract
Abstract A field emitter array memory device having two or more collector electrod an extraction electrode, at least one deflector electrode, and at least one electron field emitter is disclosed. The field emitter array memory circuit has bias voltages for collector electrodes, for the at least one deflector electrode and for the extraction electrode. In a preferred embodiment of the invention, first and second input signal voltages selectively applied to first and second deflector electrodes selectively switch the flow of electrons emitted from an electron field emitter from a first collector electrode to a second collector electrode and vice versa. A latched memory output is also included. Electron flow from the electron field emitter to one of the first and second collector electrodes is maintained until a signal voltage is applied to a deflector electrode to cause the electron flow to deflect from one collector electrode to the other collector electrode.
Inventors
- 👤 Henry F. Gray
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 09:27
CPC Classifications
G; G11; G11C; G11C7/00; G11C7/005
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
53 words
A field emitter array memory device comprising: a substrate having an electron field emitter; at least one deflector electrode; a plurality of collector electrodes; and means for applying a control pulse to said at least one deflector electrode, whereby electrons from said emitter are switched from one collector electrode to another collector electrode.
Claim 2
Dependent Claim
53 words
A field emitter array memory device comprising: a substrate having an electron field emitter; at least one deflector electrode; a plurality of collector electrodes; and means for applying a control pulse to said at least one deflector electrode, whereby electrons from said emitter are switched from one collector electrode to another collector electrode.
Claim 3
Dependent Claim
67 words
A field emitter array memory device comprising: a substrate; an electron field emitter located on said substrate; a plurality of collectors located proximate to said emitter; and at least one deflector electrode located between said emitter and said collectors; whereby electrons flow from said emitter to at least one of said collectors when said at least one deflector electrode causes said electrons to move toward said collector.
Claim 4
Dependent Claim
67 words
A field emitter array memory device comprising: a substrate; an electron field emitter located on said substrate; a plurality of collectors located proximate to said emitter; and at least one deflector electrode located between said emitter and said collectors; whereby electrons flow from said emitter to at least one of said collectors when said at least one deflector electrode causes said electrons to move toward said collector.
Claim 5
Dependent Claim
25 words
The field emitter array memory device of claim 2 further including: an extraction electrode located between said emitter and said at least one deflector electrode.
Claim 6
Dependent Claim
44 words
The field emitter array memory device of claim 3 wherein said plurality of collectors comprises: first and second collectors; and said at least one deflector electrode comprises first and second deflector electrodes which deflect said electrons to one of said first and second collectors.
Claim 7
Dependent Claim
44 words
The field emitter device of claim 3 further including: a first insulator disposed between said substrate and said extraction electrode; a second insulator disposed between said extraction electrode and said deflector electrodes; and a third insulator disposed between said deflector electrodes and said collectors.
Claim 8
Dependent Claim
44 words
The field emitter array memory device of claim 5 wherein: said plurality of collectors comprises first and second collectors; and said at least one deflector electrode comprises first and second deflector electrodes which deflect said electrons to one of said first and second collectors.
Claim 9
Dependent Claim
46 words
The field emitter array memory device of claim 6 wherein : that one of said first and second deflector electrodes having the larger voltage difference with respect to said emitter determines which one of said first and second collectors will receive said electrons from said emitter.
Claim 10
Dependent Claim
142 words
A field emitter array memory device comprising: a field emitter array device including a substrate having an emitter located thereon, first and second collector electrodes located proximate to said emitter, and at least one deflector electrode disposed between said emitter and said collector electrodes; means for establishing at least a first voltage between said emitter and said at least one deflector electrode; means for establishing respective third and fourth voltages between said emitter and each of said first and second collector electrodes; and means for applying an input signal voltage to said at least one deflector electrode; whereby said at least one deflector electrode switches a flow of electrons from one of said first and second collector electrodes to the other of said first and second collector electrodes when an input signal voltage is applied to said at least one deflector electrode.
Claim 11
Dependent Claim
142 words
A field emitter array memory device comprising: a field emitter array device including a substrate having an emitter located thereon, first and second collector electrodes located proximate to said emitter, and at least one deflector electrode disposed between said emitter and said collector electrodes; means for establishing at least a first voltage between said emitter and said at least one deflector electrode; means for establishing respective third and fourth voltages between said emitter and each of said first and second collector electrodes; and means for applying an input signal voltage to said at least one deflector electrode; whereby said at least one deflector electrode switches a flow of electrons from one of said first and second collector electrodes to the other of said first and second collector electrodes when an input signal voltage is applied to said at least one deflector electrode.
Claim 12
Dependent Claim
26 words
The field emitter array memory device of claim 8 wherein; the output of said device is the output signal voltage on one of said collector electrodes.
Claim 13
Dependent Claim
27 words
The field emitter array memory device of claim 8 wherein; said first and second collector electrodes are respectively biased to different voltages with respect to said emitter.
Claim 14
Dependent Claim
39 words
The field emitter array memory device of claim 10 wherein: said collector electrode having the larger voltage difference with respect to said emitter is established as the collector electrode receiving said electrons when said device is first turned on.
Claim 15
Dependent Claim
41 words
The field emitter array memory device of claim 11 wherein: said at least one deflector electrode switches the flow of electrons from one of said collector electrodes to the other of said collector electrodes after the device is first turned on.
Claim 16
Dependent Claim
25 words
The field emitter array memory device of claim 8 further including: an extraction electrode located between said emitter and said at least one deflector electrode.
Claim 17
Dependent Claim
81 words
The field emitter array memory device of claim 8 wherein said at least one deflector electrode includes only one deflector electrode, said device further including: means for selectively applying a positive voltage pulse or a negative voltage pulse to said deflector electrode, whereby said flow of electrons is switched from one of said first and second collector electrodes to the other one of said first and second collector electrodes as a function of whether said voltage pulse is negative or positive.
Claim 18
Dependent Claim
86 words
The field emitter array memory device of claim 8 wherein said at least one deflector electrode includes first and second deflector electrodes, said device further including: means for selectively applying a positive voltage pulse to one of said first and second deflector electrodes, whereby said flow of electrons is switched from one of said first and second collector electrodes to the other one of said first and second collector electrodes as a function of which of said first and second deflector electrodes receives said positive pulse.
Claim 19
Dependent Claim
166 words
A field emitter array cluster comprised of a plurality of field emitter array memory devices and a common substrate, each field emitter array memory device comprising: a field emitter array device having an electron field emitter located on said common substrate, first and second associated collector electrodes located proximate to said emitter, and at least one associated deflector electrode disposed between said emitter and said associated collector electrodes; means for establishing at least a first voltage between said emitter and said at least one deflector electrode; means for establishing respective third and fourth voltages between said emitter and each of said first and second collector electrodes; and means for applying an input signal voltage to said at least one deflector electrode; whereby said at least one deflector electrode switches a flow of electrons from one of said first and second collector electrodes to the other of said first and second collector electrodes when an input signal voltage is applied to said at least one deflector electrode.
Claim 20
Dependent Claim
166 words
A field emitter array cluster comprised of a plurality of field emitter array memory devices and a common substrate, each field emitter array memory device comprising: a field emitter array device having an electron field emitter located on said common substrate, first and second associated collector electrodes located proximate to said emitter, and at least one associated deflector electrode disposed between said emitter and said associated collector electrodes; means for establishing at least a first voltage between said emitter and said at least one deflector electrode; means for establishing respective third and fourth voltages between said emitter and each of said first and second collector electrodes; and means for applying an input signal voltage to said at least one deflector electrode; whereby said at least one deflector electrode switches a flow of electrons from one of said first and second collector electrodes to the other of said first and second collector electrodes when an input signal voltage is applied to said at least one deflector electrode.
Claim 21
Dependent Claim
87 words
The field emitter array cluster of claim 16 wherein said at least one deflector electrode in each field emitter array memory device includes only one associated deflector electrode and further includes: means for selectively applying a positive voltage pulse or a negative voltage pulse to said deflector electrode, whereby said flow of electrons is switched from one of said first and second collector electrodes to the other one of said first and second collector electrodes as a function of whether said voltage pulse is negative or positive.
Claim 22
Dependent Claim
96 words
The field emitter array cluster of claim 16 wherein said at least one deflector electrode in each field emitter array memory device includes associated first and second deflector electrodes and further includes: means for selectively applying a positive voltage pulse to one of said associated first and second deflector electrodes, whereby said flow of electrons is switched from one of said associated first and second collector electrodes to the other one of said associated first and second collector electrodes as a function of which of said associated first and second deflector electrodes receives said positive pulse.
Claim 23
Dependent Claim
56 words
The field emitter array cluster of claim 18 wherein in each field emitter array memory device: that one of said associated first and second deflector electrodes having the larger voltage difference with respect to said associated emitter determines which one of said associated first and second collector electrodes will receive said electrons from said associated emitter.
References Cited (Backward Citations)
US3040124A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-07-26 | 1997-01-25 | 1997-07-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-26 | 2001-01-25 | 2001-07-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-07-26 | 2005-01-25 | 2005-07-27 | $7700.00 | Window Closed / Lapsed |