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US5229972A Expired / Lapsed US ⏱️ 0.0 years remaining

Nonvolatile semiconductor memory system

Assignee: Toshiba Corp
•
Filing: 1991-01-10
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Granted: 1993-07-20
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Expires: 2011-01-10
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Abstract

Abstract An EPROM integrated circuit includes a plurality of banks. When a data write operation is to be performed for this EEPROM integrated circuit, a bank which is used once is not used again, but the operation is constantly performed for new banks. In order to select a bank, a write number storage area is provided in the EPROM integrated circuit, and the contents of the write number storage area are updated by a write number updating circuit each time the write operation is performed for a new bank.

Inventors

  • 👤 Hitoshi Kondo
  • 👤 Tetsuya Yamamoto
  • 👤 Yukihiro Saeki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-10 01:08
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/10; G11C16/102; G11C16/105; G11C16/34

Claims Analysis

Total Claims: 16
Claim 1
Independent Claim 112 words
A nonvolatile semiconductor memory system comprising: nonvolatile data storage means, having a plurality of data banks, for performing a data write operation in units of data banks; write number storage means for storing the number of data write operation times with respect to said data banks of said nonvolatile data storage means; data bank designating means for performing address designation for said data banks in said nonvolatile data storage means in accordance with the contents of said write number storage means; and updating means for updating the contents of said write number storage means each time a data write operation for each data bank of said nonvolatile data storage means is completed.
Claim 2
Dependent Claim 112 words
A nonvolatile semiconductor memory system comprising: nonvolatile data storage means, having a plurality of data banks, for performing a data write operation in units of data banks; write number storage means for storing the number of data write operation times with respect to said data banks of said nonvolatile data storage means; data bank designating means for performing address designation for said data banks in said nonvolatile data storage means in accordance with the contents of said write number storage means; and updating means for updating the contents of said write number storage means each time a data write operation for each data bank of said nonvolatile data storage means is completed.
Claim 3
Dependent Claim 20 words
A system according to claim 1, wherein said write number storage means is provided in said non-volatile data storage means.
Claim 4
Dependent Claim 21 words
A system according to claim 1, wherein said write number storage means has data storage areas of a plurality of bits.
Claim 5
Dependent Claim 34 words
A system according to claim 3, wherein said updating means updates the contents of said write number storage means by sequentially writing data in different data storage areas of said write number storage means.
Claim 6
Dependent Claim 79 words
A system according to claim 4, wherein said data bank designating means comprises: a register for holding the contents of said write number storage means; an encoder for converting the contents held by said register into binary data; and an address buffer for receiving an externally input address and an output from said encoder, adding the output from said encoder to the externally input address, and outputting the addition result as an address to said nonvolatile data storage means.
Claim 7
Dependent Claim 24 words
A system according to claim 1, wherein said nonvolatile data storage means is constituted by an EPROM (Electrically Programmable Read Only Memory) integrated circuit.
Claim 8
Dependent Claim 19 words
A system according to claim 6, wherein said EPROM integrated circuit is a one time PROM (OTPROM) integrated circuit.
Claim 9
Dependent Claim 34 words
A system according to claim 1, wherein said nonvolatile data storage means, said write number storage means, said data bank designating means, and said updating means are formed on a single integrated circuit chip.
Claim 10
Dependent Claim 29 words
A system according to claim 6, wherein said write number storage means is constituted by an EPROM circuit formed in an integrated circuit independent from said EPROM integrated circuit.
Claim 11
Dependent Claim 143 words
A nonvolatile semiconductor memory system comprising: an EPROM (Electrically Programmable Read Only Memory) integrated circuit, having a plurality of data banks, for performing a data write operation in units of data banks; a write number storage area, provided on said EPROM integrated circuit, for storing the number of data write operation times with respect to said data banks; data bank designating means for performing address designation for said data banks of said EPROM integrated circuit in accordance with the stored contents in said write number storage area; updating means for updating the contents of the write number storage area each time the data write operation for each data bank of said EPROM integrated circuit is completed; and a data write circuit for performing the data write operation for a data bank of said EPROM integrated circuit address-designated by said data bank designating means.
Claim 12
Dependent Claim 143 words
A nonvolatile semiconductor memory system comprising: an EPROM (Electrically Programmable Read Only Memory) integrated circuit, having a plurality of data banks, for performing a data write operation in units of data banks; a write number storage area, provided on said EPROM integrated circuit, for storing the number of data write operation times with respect to said data banks; data bank designating means for performing address designation for said data banks of said EPROM integrated circuit in accordance with the stored contents in said write number storage area; updating means for updating the contents of the write number storage area each time the data write operation for each data bank of said EPROM integrated circuit is completed; and a data write circuit for performing the data write operation for a data bank of said EPROM integrated circuit address-designated by said data bank designating means.
Claim 13
Dependent Claim 40 words
A system according to claim 10, wherein said data write circuit includes a write voltage supply circuit for receiving an external power source voltage, boosting the received power source voltage, and supplying the boosted voltage to said EPROM integrated circuit.
Claim 14
Dependent Claim 21 words
A system according to claim 10, wherein said write number storage area has data storage areas of a plurality of bits.
Claim 15
Dependent Claim 33 words
A system according to claim 10, wherein said updating means updates the contents of said write number storage area by sequentially writing data in different bit positions of said write number storage area.
Claim 16
Dependent Claim 78 words
A system according to claim 10, wherein said data bank designating comprises: a register for holding the contents of said write number storage area; an encoder for converting the contents held by said register into binary data; and an address buffer for receiving an externally input address and an output from said encoder, adding the output from said encoder to the externally input address, and outputting the addition result as an address to said nonvolatile data storage means.

References Cited (Backward Citations)

EP0067925A2 Cited
US4682287A Cited
US4754435A Cited
GB2171543A Cited
EP0304981A1 Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1996-07-19 1997-01-18 1997-07-20 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2000-07-19 2001-01-18 2001-07-20 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2004-07-19 2005-01-18 2005-07-20 $7700.00 Window Closed / Lapsed

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