US5229305A
Expired / Lapsed
US
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Method for making intrinsic gettering sites in bonded substrates
Assignee: NXP USA Inc
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Filing: 1992-02-03
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Granted: 1993-07-20
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Expires: 2012-02-03
Abstract
Abstract A method is provided for making a plurality of intrinsic gettering sites in a bonded silicon substrate (21). A first silicon substrate (10) with a first and second surface (12, 13) is provided. The first surface (12) of the first silicon substrate (10) is implanted with a plurality of nucleation ions (14). The first silicon substrate (10) is then heated in such a manner that a plurality of nucleation sites form from the plurality of nucleation ions. A second substrate (20) with a first surface (22) is then bonded to the first surface(12) of the first silicon substrate (10). A predetermined portion (24) of the first silicon substrate (10) is removed from the second surface (13) of the first silicon substrate (10), thereby providing a thin substrate having a plurality of intrinsic gettering sites near its active area, wherein the thin substrate is bonded to a handle semiconductor substrate (21).
Inventors
- 👤 James W. Baker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 02:52
CPC Classifications
H; H10; H10P; H10P36/00; H10P36/03; H10P36/20; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/135
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
112 words
A method for making a plurality of intrinsic gettering sites in a bonded silicon substrate comprising: providing a first silicon substrate with a first and second surface; implanting a plurality of nucleation ions into the first surface of the first silicon substrate; heating the first silicon substrate in such a manner that a plurality of nucleation sites form from the plurality of nucleation ions; bonding a second substrate to the first surface of the first silicon substrate; and removing a portion of the first silicon substrate from the second surface, thereby providing the first silicon substrate with the plurality of intrinsic gettering sites near an active area of the first silicon substrate.
Claim 2
Independent Claim
112 words
A method for making a plurality of intrinsic gettering sites in a bonded silicon substrate comprising: providing a first silicon substrate with a first and second surface; implanting a plurality of nucleation ions into the first surface of the first silicon substrate; heating the first silicon substrate in such a manner that a plurality of nucleation sites form from the plurality of nucleation ions; bonding a second substrate to the first surface of the first silicon substrate; and removing a portion of the first silicon substrate from the second surface, thereby providing the first silicon substrate with the plurality of intrinsic gettering sites near an active area of the first silicon substrate.
Claim 3
Dependent Claim
32 words
The method of claim 1 wherein the implanting of nucleation ions into the first surface of the first silicon substrate is achieved with a depth ranging from 0.3 micron to 2.0 microns.
Claim 4
Dependent Claim
27 words
The method of claim 1 wherein the heating of the first silicon substrate is achieved by a single-step process that thermally cycles the first silicon substrate once.
Claim 5
Dependent Claim
34 words
The method of claim 3 wherein the single-step process is achieved by heating at a temperature and time period from 700 degrees Celsius to 950 degrees Celsius and from 4 to 8 hours, respectively.
Claim 6
Dependent Claim
29 words
The method of claim 1 wherein the heating of the first silicon substrate is achieved by a multi-step process that thermally cycles the first silicon substrate more than once.
Claim 7
Dependent Claim
70 words
The method of claim 5 wherein the multi-step process is achieved by first heating the first silicon substrate to a temperature range from 700 degrees Celsius to 1050 degrees Celsius for a period of time ranging from 4 to 8 hours and second heating the first silicon substrate to a temperature range from 900 degrees Celsius to 1050 degrees Celsius for a time period ranging from 1 to 4 hours.
Claim 8
Independent Claim
141 words
A method for trapping mobile ions in a silicon semiconductor substrate during fabrication of a plurality of semiconductor devices on bonded silicon semiconductor substrates, comprising: providing a first silicon substrate with a first and second surface; implanting a plurality of nucleation ions into the first surface of the first silicon substrate; bonding the first silicon substrate on the first surface to a second silicon substrate, wherein the bonding of the first silicon substrate and the second silicon substrate further creates a plurality of nucleation sites for trapping mobile ions in the first silicon substrate; removing an amount of the first silicon substrate from the second surface, thereby creating a third surface of the first silicon substrate on which to fabricate the plurality of semiconductor devices; and fabricating the plurality of semiconductor devices on the third surface of the first silicon substrate.
Claim 9
Independent Claim
141 words
A method for trapping mobile ions in a silicon semiconductor substrate during fabrication of a plurality of semiconductor devices on bonded silicon semiconductor substrates, comprising: providing a first silicon substrate with a first and second surface; implanting a plurality of nucleation ions into the first surface of the first silicon substrate; bonding the first silicon substrate on the first surface to a second silicon substrate, wherein the bonding of the first silicon substrate and the second silicon substrate further creates a plurality of nucleation sites for trapping mobile ions in the first silicon substrate; removing an amount of the first silicon substrate from the second surface, thereby creating a third surface of the first silicon substrate on which to fabricate the plurality of semiconductor devices; and fabricating the plurality of semiconductor devices on the third surface of the first silicon substrate.
Claim 10
Dependent Claim
26 words
The method of claim 7 wherein the implanting of the nucleation ions comprises implanting the nucleation ions to a depth of 0.3 micron to 2.0 micron.
Claim 11
Dependent Claim
12 words
The method of claim 8 wherein the depth is substantially 0.5 micron.
Claim 12
Dependent Claim
17 words
The method of claim 7 wherein the nucleation ions comprise oxygen, argon, phosphorous, arsenic or mixtures thereof.
References Cited (Backward Citations)
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