US5227663A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integral dam and heat sink for semiconductor device assembly
Assignee: LSI Corp
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Filing: 1992-03-18
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Granted: 1993-07-13
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Expires: 2012-03-18
Abstract
Abstract A metallic or ceramic dam structure surrounding a semiconductor die in a semiconductor device assembly is disclosed. The dam structure forms a cavity containing a potting compound encapsulating the die. The dam structure may also be provided with a flat lid portion, enclosing the cavity and forming a flat, exterior, heat-dissipating surface for the semiconductor device assembly. Further, an additional add-on structure, having heat dissipating fins, may be joined to the dam structure, exterior the semiconductor device assembly, to provide additional heat dissipation. The add-on structure is particularly well-suited to applications where air cooling is available.
Inventors
- 👤 Sadanand Patil
- 👤 Adrian Murphy
- 👤 Keith Newman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 04:54
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/30; H05K3/303; H05K2201/00; H05K2201/10; H05K2201/10227; H05K2201/10424; H05K2201/10613; H05K2201/10621; H05K2201/10689; H05K2203/00; H05K2203/16; H05K2203/166; H05K2203/167; Y; Y02; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
249 words
A semiconductor device assembly comprising: a die attach pad having a periphery; a die having a top surface containing circuit elements and a bottom surface, mounted by its bottom surface atop the die attach pad; a plurality of leads having inner ends and extending generally radially outwardly from adjacent the die attach pad; a first, segmented plastic film layer disposed atop the leads, a portion of the first plastic film layer bridging a gap between the inner ends of the leads and the die attach pad and leaving a portion of the leads exposed; a plurality of bond wires connecting the circuit elements of the top surface of the die to the exposed portions of the inner ends of the leads; a second plastic film layer disposed beneath the leads, and beneath the periphery of the die attach pad; a ring-like frame formed of anodized aluminum disposed atop the leads; epoxy disposed atop the leads, covering the circuit elements, completely encapsulating the die and extending to the ring-like frame, thereby forming an encapsulated semiconductor device assembly; and a first heat sink structure disposed atop the die, facing the circuit element containing top surface of the die, said first heat sink structure formed integrally with the ring-like frame, said first heat sink structure having a first surface in close proximity to the circuit element containing top surface of the die and in contact with the epoxy, and having a second surface forming a flat exterior surface for the semiconductor device.
Claim 2
Dependent Claim
249 words
A semiconductor device assembly comprising: a die attach pad having a periphery; a die having a top surface containing circuit elements and a bottom surface, mounted by its bottom surface atop the die attach pad; a plurality of leads having inner ends and extending generally radially outwardly from adjacent the die attach pad; a first, segmented plastic film layer disposed atop the leads, a portion of the first plastic film layer bridging a gap between the inner ends of the leads and the die attach pad and leaving a portion of the leads exposed; a plurality of bond wires connecting the circuit elements of the top surface of the die to the exposed portions of the inner ends of the leads; a second plastic film layer disposed beneath the leads, and beneath the periphery of the die attach pad; a ring-like frame formed of anodized aluminum disposed atop the leads; epoxy disposed atop the leads, covering the circuit elements, completely encapsulating the die and extending to the ring-like frame, thereby forming an encapsulated semiconductor device assembly; and a first heat sink structure disposed atop the die, facing the circuit element containing top surface of the die, said first heat sink structure formed integrally with the ring-like frame, said first heat sink structure having a first surface in close proximity to the circuit element containing top surface of the die and in contact with the epoxy, and having a second surface forming a flat exterior surface for the semiconductor device.
Claim 3
Dependent Claim
22 words
Semiconductor device assembly, according to claim 1, wherein: the ring-like frame and the first heat sink structure completely enclose the semiconductor die.
Claim 4
Dependent Claim
27 words
Semiconductor device assembly, according to claim 1, further comprising: an add-on thermally-conductive second heat sink structure joinable to the second surface of the first heat sink structure.
Claim 5
Dependent Claim
249 words
A semiconductor device assembly comprising: a die attach pad having a periphery; a die having a top surface containing circuit elements and a bottom surface, mounted by its bottom surface atop the die attach pad; a plurality of leads having inner ends and extending generally radially outwardly from adjacent the die attach pad; a first, segmented plastic film layer disposed atop the leads, a portion of the first plastic film layer bridging a gap between the inner ends of the leads and the die attach pad and leaving a portion of the leads exposed; a plurality of bond wires connecting the circuit elements of the top surface of the die to the exposed portions of the inner ends of the leads; a second plastic film layer disposed beneath the leads, and beneath the periphery of the die attach pad; a ring-like frame formed of ceramic material disposed atop the leads; epoxy disposed atop the leads, covering the circuit elements, completely encapsulating the die and extending to the ring-like frame, thereby forming an encapsulated semiconductor device assembly; and a first heat sink structure disposed atop the die, facing the circuit element containing top surface of the die, said first heat sink structure formed integrally with the ring-like frame, said first heat sink structure having a first surface in close proximity to the circuit element containing top surface of the die and in contact with the epoxy, and having a second surface forming a flat exterior surface for the semiconductor device.
Claim 6
Dependent Claim
249 words
A semiconductor device assembly comprising: a die attach pad having a periphery; a die having a top surface containing circuit elements and a bottom surface, mounted by its bottom surface atop the die attach pad; a plurality of leads having inner ends and extending generally radially outwardly from adjacent the die attach pad; a first, segmented plastic film layer disposed atop the leads, a portion of the first plastic film layer bridging a gap between the inner ends of the leads and the die attach pad and leaving a portion of the leads exposed; a plurality of bond wires connecting the circuit elements of the top surface of the die to the exposed portions of the inner ends of the leads; a second plastic film layer disposed beneath the leads, and beneath the periphery of the die attach pad; a ring-like frame formed of ceramic material disposed atop the leads; epoxy disposed atop the leads, covering the circuit elements, completely encapsulating the die and extending to the ring-like frame, thereby forming an encapsulated semiconductor device assembly; and a first heat sink structure disposed atop the die, facing the circuit element containing top surface of the die, said first heat sink structure formed integrally with the ring-like frame, said first heat sink structure having a first surface in close proximity to the circuit element containing top surface of the die and in contact with the epoxy, and having a second surface forming a flat exterior surface for the semiconductor device.
Claim 7
Dependent Claim
14 words
Semiconductor device assembly, according to claim 4, wherein: the ceramic material is beryllium oxide.
Claim 8
Dependent Claim
14 words
Semiconductor device assembly, according to claim 4, wherein: the ceramic material is aluminum nitrate.
Claim 9
Dependent Claim
22 words
Semiconductor device assembly, according to claim 4, wherein: the ring-like frame and the first heat sink structure completely enclose the semiconductor die.
Claim 10
Dependent Claim
27 words
Semiconductor device assembly, according to claim 4, further comprising: an add-on thermally-conductive second heat sink structure joinable to the second surface of the first heat sink structure.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-07-12 | 1997-01-11 | 1997-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-12 | 2001-01-11 | 2001-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-07-12 | 2005-01-11 | 2005-07-13 | $7700.00 | Window Closed / Lapsed |