US5227621A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ultra-wideband high power photon triggered frequency independent radiator
Assignee: United States Department of the Army
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Filing: 1992-09-18
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Granted: 1993-07-13
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Expires: 2012-09-18
Abstract
Abstract A photoconductive switch coupled to an energy storage device wherein the tch is comprised of photoconductive semiconductor material while the energy storage device comprises two quasi-radial transmission line including a different material, i.e. a dielectric storage medium. The photoconductive semiconductor gallium arsenide switch is electrically connected to two quasi-radial transmission lines formed in part by layers of metallization configured in a quasi-radially shaped pattern upon the energy storage device. A variation comprises a photoconductive semiconductor gallium arsenide wafer sandwiched between two quasi-radial transmission lines so that the semiconductor gallium arsenide wafer serves as substrate, energy storage medium, and photoconductive switch.
Inventors
- 👤 Anderson H. Kim
- 👤 Leo D. Didomenico
- 👤 Maurice Weiner
- 👤 Louis J. Jasper, Jr.
- 👤 Robert J. Youmans
- 👤 Thomas E. Koscica
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:43
CPC Classifications
H; H03; H03K; H03K3/00; H03K3/02; H03K3/53; H03K3/57; G; G01; G01S; G01S13/00; G01S13/02; G01S13/0209; G01S7/00; G01S7/02; G01S7/28; G01S7/282
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
145 words
An ultra-wide band RF radiator, comprising: an electrical energy storage device coupled to a source of electrical voltage comprised of a circular dielectric medium having an upper and lower surface, said lower surface of said dielectric medium resting on a metallized circular electrode plate, and a metallized first upper electrode resting on said upper surface of said dielectric medium thereby forming a first quasi-radial electrical transmission line; a metallized second upper electrode resting on said upper surface of said dielectric medium thereby forming a second quasi-radial electrical transmission line; and a photoconductive switch electrically connected to said first and second upper electrodes, said switch becoming conductive upon the application of predetermined type of light energy to cause a time-varying electromagnetic wave to be generated between said first and second quasi-radial transmission lines thereby generating a relatively high amplitude, narrow output pulse of nanosecond pulsewidth dimensions.
Claim 2
Dependent Claim
145 words
An ultra-wide band RF radiator, comprising: an electrical energy storage device coupled to a source of electrical voltage comprised of a circular dielectric medium having an upper and lower surface, said lower surface of said dielectric medium resting on a metallized circular electrode plate, and a metallized first upper electrode resting on said upper surface of said dielectric medium thereby forming a first quasi-radial electrical transmission line; a metallized second upper electrode resting on said upper surface of said dielectric medium thereby forming a second quasi-radial electrical transmission line; and a photoconductive switch electrically connected to said first and second upper electrodes, said switch becoming conductive upon the application of predetermined type of light energy to cause a time-varying electromagnetic wave to be generated between said first and second quasi-radial transmission lines thereby generating a relatively high amplitude, narrow output pulse of nanosecond pulsewidth dimensions.
Claim 3
Dependent Claim
22 words
The ultra-wide band RF radiator according to claim 1 wherein said first and second upper electrodes comprise quasi-radially shaped patterns of metallization.
Claim 4
Dependent Claim
22 words
The ultra-wide band RF radiator according to claim 2 wherein said first and second upper metallized electrodes are given opposite bias charges.
Claim 5
Dependent Claim
33 words
The ultra-wide band RF radiator according to claim 3 wherein said photoconductive switch is centrally located upon said upper surface of said dielectric medium between said first and a second quasi-radial transmission lines.
Claim 6
Dependent Claim
17 words
The ultra-wide band RF radiator according to claim 4 wherein said metallized circular electrode plate is grounded.
Claim 7
Dependent Claim
149 words
An ultra-wide band RF radiator, comprising: an photoconductive, semi-insulating wafer electrical energy storage element, said semi-insulating wafer having a first and second major surface; a metallized circular electrode plate affixed to said second major surface of said photoconductive, semi-insulating wafer; a metallized first upper electrode resting on said first major surface of said photoconductive, semi-insulating wafer thereby forming a first quasi-radial electrical transmission line; a metallized second upper electrode resting on said first major surface of said photoconductive, semi-insulating wafer thereby forming a second quasi-radial electrical transmission line; a photoconductive switching means for exposing the region of said photoconductive, semi-insulating wafer electrical energy storage element located between said first and second upper electrodes to light energy, said photoconductive, semi-insulating wafer becoming conductive upon the application of predetermined type of light energy to cause a relatively high amplitude, narrow output pulse of a nanosecond pulsewidth dimensions to be thereby generated.
Claim 8
Dependent Claim
149 words
An ultra-wide band RF radiator, comprising: an photoconductive, semi-insulating wafer electrical energy storage element, said semi-insulating wafer having a first and second major surface; a metallized circular electrode plate affixed to said second major surface of said photoconductive, semi-insulating wafer; a metallized first upper electrode resting on said first major surface of said photoconductive, semi-insulating wafer thereby forming a first quasi-radial electrical transmission line; a metallized second upper electrode resting on said first major surface of said photoconductive, semi-insulating wafer thereby forming a second quasi-radial electrical transmission line; a photoconductive switching means for exposing the region of said photoconductive, semi-insulating wafer electrical energy storage element located between said first and second upper electrodes to light energy, said photoconductive, semi-insulating wafer becoming conductive upon the application of predetermined type of light energy to cause a relatively high amplitude, narrow output pulse of a nanosecond pulsewidth dimensions to be thereby generated.
Claim 9
Dependent Claim
32 words
The ultra-wide band RF radiator of claim 6 wherein the regions of said photoconductive, semi-insulating wafer directly adjacent said first and second upper electrodes and said metallized circular electrode are highly doped.
Claim 10
Dependent Claim
27 words
The ultra-wide band RF radiator of claim 7 wherein said photoconductive, semi-insulating wafer is comprised of GaAs and said photoconductive, semi-insulating wafer serves as said switching means.
Claim 11
Dependent Claim
22 words
The ultra-wide band RF radiator according to claim 8 wherein said first and second upper electrodes comprise quasi-radially shaped patterns of metallization.
Claim 12
Dependent Claim
22 words
The ultra-wide band RF radiator according to claim 9 wherein said first and second upper metallized electrodes are given opposite bias charges.
Claim 13
Dependent Claim
25 words
The ultra-wide band RF radiator according to claim 10 wherein said switching means is centrally located between said first and a second quasi-radial transmission lines.
Claim 14
Dependent Claim
17 words
The ultra-wide band RF radiator according to claim 11 wherein said metallized circular electrode plate is grounded.
References Cited (Backward Citations)
US5177486A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-07-12 | 1997-01-11 | 1997-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-12 | 2001-01-11 | 2001-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-07-12 | 2005-01-11 | 2005-07-13 | $7700.00 | Window Closed / Lapsed |