Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
221 words
A protective circuit (SG) for a laser diode (LD) to protect the laser diode against excessive high-frequency signals as well as against electrostatic charges, comprising, an input terminal (I) adapted for connection to a signal source; an output terminal (O) providing a signal to said laser diode (LD); a high-frequency limiting circuit (BE), coupled to said input terminal (I), and having a first diode (D1) and a second diode (D2), oppositely poled and each having a first terminal connected to said input terminal and a second terminal connected to ground, and a bias voltage (UDC) applied to said first and second diodes to keep them in a non-conductive state whenever signal amplitude at said input terminal is within a predetermined threshold range; and a high-frequency damping circuit (AT), including a third diode (D3), normally non-conductive, connected between said high-frequency limiting circuit and said output terminal (O), said first and second diodes (D2) responding to excessive electrostatic d-c voltages applied to said input terminal by becoming conductive, thereby bleeding off said excessive voltages before they can reach said laser diode; said first, second, and third diodes (D1,D2,D3) responding to high-frequency signals exceeding a predetermined threshold limit by becoming conductive, thereby limiting voltage of alternating signals reaching said laser diode (LD) to a range which is safely tolerated by said laser diode (LD).
Claim 2
Dependent Claim
221 words
A protective circuit (SG) for a laser diode (LD) to protect the laser diode against excessive high-frequency signals as well as against electrostatic charges, comprising, an input terminal (I) adapted for connection to a signal source; an output terminal (O) providing a signal to said laser diode (LD); a high-frequency limiting circuit (BE), coupled to said input terminal (I), and having a first diode (D1) and a second diode (D2), oppositely poled and each having a first terminal connected to said input terminal and a second terminal connected to ground, and a bias voltage (UDC) applied to said first and second diodes to keep them in a non-conductive state whenever signal amplitude at said input terminal is within a predetermined threshold range; and a high-frequency damping circuit (AT), including a third diode (D3), normally non-conductive, connected between said high-frequency limiting circuit and said output terminal (O), said first and second diodes (D2) responding to excessive electrostatic d-c voltages applied to said input terminal by becoming conductive, thereby bleeding off said excessive voltages before they can reach said laser diode; said first, second, and third diodes (D1,D2,D3) responding to high-frequency signals exceeding a predetermined threshold limit by becoming conductive, thereby limiting voltage of alternating signals reaching said laser diode (LD) to a range which is safely tolerated by said laser diode (LD).
Claim 3
Dependent Claim
33 words
The circuit according to claim 1, wherein said third diode (D3) is rendered normally non-conductive by application of the same bias voltage as the bias voltage applied to said first and second diodes.
Claim 4
Dependent Claim
17 words
The circuit according to claim 2, wherein said first and second diodes (D1, D2) are Schottky diodes.
Claim 5
Dependent Claim
15 words
The circuit according to claim 3, wherein said third diode (D3) is a PIN diode.
Claim 6
Dependent Claim
15 words
The circuit according to claim 2, wherein said third diode (D3) is a PIN diode.
Claim 7
Dependent Claim
235 words
The circuit according to claim 2, further comprising a first junction; a first capacitor (C1), a first inductance (L1), and a second capacitor (C3), said first junction being connected through the first capacitor (C1) to the input terminal (I) of the high-frequency limiting circuit (BE) and to one terminal of said inductance, one terminal of the first diode, and one terminal of the second capacitor (C3), the second terminal of said first inductance being connected to chassis or ground; a second junction; a second inductance (L2) and a third capacitor (C4), said second diode (D2), said second inductance (L2) and said third capacitor being connected to said second junction, said second diode (D2) having its other terminal connected to ground or chassis; a third junction; a coupling resistor (R); a third inductance (L3) and a fourth capacitor (C5), said resistor (R), said third inductance (L3) and said third diode (D3) being connected to said third junction; a common fourth junction connected to the other terminal of said first diode (D1), said second inductance (L2), said coupling resistor (R), said third diode (D3), and to a coupling capacitor (C2), the other terminal of said coupling capacitor (C2) being connected to ground or chassis; and a source of bias voltage (U DC ) having one terminal (A1) connected to the other terminal of said third inductance (L3) and a second terminal (A2) connected to ground or chassis.
Claim 8
Dependent Claim
50 words
The circuit according to claim 6, further including a sixth capacitor (C6) connected between the other terminal of the third inductance (L3) and ground or chassis, the second terminal of the fourth capacitor (C5) forming the output terminal of the protective circuit to which said laser diode (LD) is connected.
Claim 9
Dependent Claim
30 words
The circuit according to claim 6, wherein a fifth capacitor (C2), said third diode (D3), said third inductance (13) and said source of reference voltage form said high-frequency damping circuit.