Abstract A field-emission type switching device includes a substrate formed with a recess having a straight edge and serrated edge opposite to the straight edge. A gate electrode is formed at the bottom of the recess. An emitter electrode is provided over the substrate and formed with a serrated edge which is slightly off alignment with the serrate edge of the recess so as to provide an emitter overhanging portion overhanging the recess. Similarly, a collector electrode is provided over the substrate means and formed with a straight edge which is slightly off alignment with the straight edge of the recess so as to provide a collector overhanging portion overhanging the recess. The emitter and collector electrodes are disposed in one plate and the gate electrode is disposed in another plane below the one plane.
A method for making a field-emission type switching device comprising the steps of: (a) forming an insulation layer on a semiconductor substrate layer; (b) forming an electrically conductive layer over said insulation layer; (c) etching said electrically conductive layer to form an emitter electrode having a serrated edge having at least one tip and a collector electrode having a straight edge; (d) etching said insulation layer through a space between said emitter electrode and collector electrode as to form a recess in said insulation layer such that an emitter overhanging portion is formed overhanging said recess and, at the same time, a collector overhanging portion is formed overhanging said recess; (e) injecting ions at the bottom of said recess into said semiconductor substrate so as to form a gate electrode; and (f) etching said overhanging portions to provide tapered edges; wherein the at least one tip of the serrated edge of the emitter electrode is left at a thickness within a range of 0.02-0.04 micrometer and wherein the point of contact of the emitter electrode with the insulation layer is maintained so as to be thick.
Claim 2
Independent Claim
186 words
A method for making a field-emission type switching device comprising the steps of: (a) forming an insulation layer on a semiconductor substrate layer; (b) forming an electrically conductive layer over said insulation layer; (c) etching said electrically conductive layer to form an emitter electrode having a serrated edge having at least one tip and a collector electrode having a straight edge; (d) etching said insulation layer through a space between said emitter electrode and collector electrode as to form a recess in said insulation layer such that an emitter overhanging portion is formed overhanging said recess and, at the same time, a collector overhanging portion is formed overhanging said recess; (e) injecting ions at the bottom of said recess into said semiconductor substrate so as to form a gate electrode; and (f) etching said overhanging portions to provide tapered edges; wherein the at least one tip of the serrated edge of the emitter electrode is left at a thickness within a range of 0.02-0.04 micrometer and wherein the point of contact of the emitter electrode with the insulation layer is maintained so as to be thick.