US5212101A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Substitutional carbon in silicon
Assignee: Qinetiq Ltd
•
Filing: 1990-04-11
•
Granted: 1993-05-18
•
Expires: 2010-04-11
Abstract
Abstract The invention provides a method of producing silicon with about 100% substitutionality of very high concentrations of carbon up to about 10 21 cm -3 , which has good quality recrystallized layers containing low levels of residual damage, and which avoids precipitation of mobile carbon. This method, compatible with current state-of-the-art VLSI silicon technology, comprises the sequential steps of: implanting a silicon wafer with carbon ions, and two step annealing of the implanted silicon wafer.
Inventors
- 👤 Leigh T. Canham
- 👤 Keith G. Barraclough
- 👤 Mark R. Dyball
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 11:06
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/208; H10P30/226; Y; Y10; Y10S; Y10S148/00; Y10S148/004; Y10S148/155; Y10S438/00; Y10S438/914; Y10S438/918
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
77 words
A method of incorporating substitutional carbon comprising the sequential steps of: implanting a silicon wafer with C + ions, and two step annealing of the implanted silicon wafer comprising first furnace annealing at a temperature within the range 500° C. to 700° C. for a time between about 30 minutes and 2 hours and thereafter annealing at a temperature within the range of 900° C. to 1200° C. for a time between about 1 and 30 seconds.
Claim 2
Independent Claim
77 words
A method of incorporating substitutional carbon comprising the sequential steps of: implanting a silicon wafer with C + ions, and two step annealing of the implanted silicon wafer comprising first furnace annealing at a temperature within the range 500° C. to 700° C. for a time between about 30 minutes and 2 hours and thereafter annealing at a temperature within the range of 900° C. to 1200° C. for a time between about 1 and 30 seconds.
Claim 3
Dependent Claim
30 words
The method of claim 1 further including the step of implanting at least one isovalent dopant for the purpose of strain compensation prior to the implantation by C + ions.
Claim 4
Dependent Claim
32 words
The method of claim 2 further including the step wherein the silicon wafer is implanted with a pre-amorphization ion dopant prior to the subsequent implantations with isovalent dopant and C + .
Claim 5
Dependent Claim
31 words
The method of claim 1 where the implanting of the silicon wafer with C + ions is carried out at a temperature within the range of about 77K to about 300K.
Claim 6
Dependent Claim
28 words
The method of claim 2 where the implantation of at least one isovalent dopant is carried out at a temperature within the range of about 77K to 300K.
Claim 7
Dependent Claim
27 words
The method of claim 3 where the implantation of a pre-amorphization ion dopant is carried out at a temperature within the range of about 77K to 300K.
Claim 8
Dependent Claim
29 words
The method of claim 1 where the implanting of the silicon wafer with C + ions is carried out at an energy of between 50 keV and 500 keV.
Claim 9
Dependent Claim
32 words
The method of claim 1 where implanting of the silicon wafer with C + is carried out at a C + dose of between 1×10 13 and 5×10 16 cm -2 .
Claim 10
Dependent Claim
23 words
The method of claim 2 where the isovalent dopant is at least one of Ge + , Sn + and Pb + .
Claim 11
Dependent Claim
25 words
The method of claim 3 where the pre-amorphization ion dopant is one of Si + , Ge + , Sn + and Pb + .
Claim 12
Dependent Claim
22 words
The method of claim 10 where the pre-amorphization implant comprises implantation of Si + at an energy between 0 and 300 keV.
Claim 13
Dependent Claim
22 words
The method of claim 10 where the pre-amorphization implant comprises implantation of Ge + at an energy between 0 and 500 keV.
Claim 14
Dependent Claim
22 words
The method of claim 10 where the pre-amorphization implant comprises implantation of Sn + at an energy between 0 and 750 keV.
Claim 15
Dependent Claim
22 words
The method of claim 10 where the pre-amorphization implant comprises implantation of Pb + at an energy between 0 and 1 Mev.
Claim 16
Dependent Claim
14 words
A silicon wafer containing substitutional carbon made according to the method of claim 1.
References Cited (Backward Citations)
DE220812C
Cited
DE220814C
Cited
US3622382A
Cited
JPS56105652A
Cited
US4891332A
Cited
JPS5846617A
Cited
WO1986003334A2
Cited
WO1988009060A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-05-17 | 1996-11-16 | 1997-05-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-05-17 | 2000-11-16 | 2001-05-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-05-17 | 2004-11-16 | 2005-05-18 | $7700.00 | Window Closed / Lapsed |