US5209803A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Parallel plate reactor and method of use
Assignee: EXCELIS TECHNOLOGIES Inc
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Filing: 1991-01-18
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Granted: 1993-05-11
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Expires: 2011-01-18
Abstract
Abstract A parallel plate reactor having a grounded grid disposed between an RF powered electrode and a grounded electrode upon which a substrate is disposed. A method of utilizing the above apparatus consists of etching the substrate using a composition of 30-100% NF3 (nitrogen trifluoride) at 25 SCCM (standard cubic centimeter per minute) and 0-70% He (helium) at 75 SCCM to etch a layer of PECVD (plasma enhanced chemical vapor deposition) Si3N4 (silicon nitride). The etching takes place at 200 mtorr to 5 torr pressure and 50-400 watts RF power.
Inventors
- 👤 Gary B. Powell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:26
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 51
Claim 1
Independent Claim
180 words
An apparatus for etching substrates comprising: an upper electrode coupled to an R-F power source; a lower electrode; a grid having openings defined therein disposed between said upper electrode and said lower electrode, said grid and said upper electrode forming an upper chamber therebetween, said grid being clamped to have the same potential at all times as the lower electrode and forming with said lower electrode a lower chamber therebetween; a lid being coupled to a first surface of said upper electrode such that said lid and said upper electrode define a gas mixing chamber therebetween; an insulator coupled to a second surface of said upper electrode and to a first surface of said grid, said insulator, upper electrode, and grid defining said upper RF chamber therebetween; a wall of said lower chamber having a first end coupled to said insulator; and a base coupled to a second end of said lower chamber wall such that said base, lower chamber wall, and grid form said lower chamber therebetween, said lower electrode being disposed in the lower chamber on said base.
Claim 2
Independent Claim
180 words
An apparatus for etching substrates comprising: an upper electrode coupled to an R-F power source; a lower electrode; a grid having openings defined therein disposed between said upper electrode and said lower electrode, said grid and said upper electrode forming an upper chamber therebetween, said grid being clamped to have the same potential at all times as the lower electrode and forming with said lower electrode a lower chamber therebetween; a lid being coupled to a first surface of said upper electrode such that said lid and said upper electrode define a gas mixing chamber therebetween; an insulator coupled to a second surface of said upper electrode and to a first surface of said grid, said insulator, upper electrode, and grid defining said upper RF chamber therebetween; a wall of said lower chamber having a first end coupled to said insulator; and a base coupled to a second end of said lower chamber wall such that said base, lower chamber wall, and grid form said lower chamber therebetween, said lower electrode being disposed in the lower chamber on said base.
Claim 3
Dependent Claim
18 words
The apparatus of claim 1 further comprising a second insulator disposed between said base and said lower electrode.
Claim 4
Dependent Claim
16 words
The apparatus of claim 2 wherein said first and second insulators are comprised of aluminum oxide.
Claim 5
Dependent Claim
14 words
The apparatus of claim 1 further comprising a gas source coupled to said lid.
Claim 6
Dependent Claim
14 words
The apparatus of claim 4 wherein said gas source comprises a fluorine gas source.
Claim 7
Dependent Claim
13 words
The apparatus of claim 5 wherein said fluorine gas source comprises nitrogen trifluoride.
Claim 8
Dependent Claim
13 words
The apparatus of claim 5 wherein said fluorine gas source comprises carbon tetrafluoride.
Claim 9
Dependent Claim
13 words
The apparatus of claim 5 wherein said fluorine gas source comprises sulfur hexafluoride.
Claim 10
Independent Claim
89 words
An apparatus for etching substrates comprising: an upper electrode coupled to an RF power source wherein said upper electrode is laterally supported by the structure of said apparatus; a lower electrode; a grid disposed between said upper electrode and said lower electrode, said grid and said upper electrode forming an upper chamber therebetween; said grid being clamped to have the same potential at all times as the lower electrode and forming with said lower electrode a lower chamber therebetween; and a gas mixing chamber formed in the upper chamber.
Claim 11
Independent Claim
89 words
An apparatus for etching substrates comprising: an upper electrode coupled to an RF power source wherein said upper electrode is laterally supported by the structure of said apparatus; a lower electrode; a grid disposed between said upper electrode and said lower electrode, said grid and said upper electrode forming an upper chamber therebetween; said grid being clamped to have the same potential at all times as the lower electrode and forming with said lower electrode a lower chamber therebetween; and a gas mixing chamber formed in the upper chamber.
Claim 12
Independent Claim
191 words
An apparatus for etching substrates comprising: an upper electrode having a first surface, a second surface and defining an opening therein extending from said first surface to said second surface, said upper electrode electrically clamped to said grid, being coupled to a power source; a lid coupled to said first surface of said upper electrode, said lid and said upper electrode defining a gas mixing chamber therebetween; a first insulator having a first end coupled to said second surface of said upper electrode and a second end; a conductive grid coupled to said second end of said first insulator, said conductive grid, first insulator, and upper electrode defining a plasma chamber therebetween; a lower wall having a first end coupled to said second end of said first insulator and a second end; a base having a first surface coupled to said lower wall, wherein said base, lower wall, and conductive grid define a lower chamber; a lower electrode coupled to said first surface of said base and disposed in said lower chamber; and a reactant gas source coupled to said lid to provide a reactant gas to said gas mixing chamber.
Claim 13
Independent Claim
191 words
An apparatus for etching substrates comprising: an upper electrode having a first surface, a second surface and defining an opening therein extending from said first surface to said second surface, said upper electrode electrically clamped to said grid, being coupled to a power source; a lid coupled to said first surface of said upper electrode, said lid and said upper electrode defining a gas mixing chamber therebetween; a first insulator having a first end coupled to said second surface of said upper electrode and a second end; a conductive grid coupled to said second end of said first insulator, said conductive grid, first insulator, and upper electrode defining a plasma chamber therebetween; a lower wall having a first end coupled to said second end of said first insulator and a second end; a base having a first surface coupled to said lower wall, wherein said base, lower wall, and conductive grid define a lower chamber; a lower electrode coupled to said first surface of said base and disposed in said lower chamber; and a reactant gas source coupled to said lid to provide a reactant gas to said gas mixing chamber.
Claim 14
Dependent Claim
14 words
The apparatus of claim 10 wherein said reactant gas is a fluorine source gas.
Claim 15
Dependent Claim
13 words
The apparatus of claim 11 wherein said fluorine gas source is nitrogen trifluoride.
Claim 16
Dependent Claim
13 words
The apparatus of claim 11 wherein said fluorine gas source is carbon tetrafluoride.
Claim 17
Dependent Claim
13 words
The apparatus of claim 11 wherein said fluorine gas source is sulfur hexafluoride.
Claim 18
Independent Claim
100 words
An apparatus for etching substrates comprising: an upper electrode coupled to an RF power source wherein said upper electrode is laterally supported by the housing structure of said apparatus; a lower electrode; a grid disposed between said upper electrode and said lower electrode, said grid and said upper electrode forming an upper chamber therebetween; said grid, being clamped to have the same potential at all times as the lower electrode and forming with said lower electrode a lower chamber therebetween; means for centrally introducing gases into said apparatus, and a gas mixing chamber that is formed in said upper chamber.
Claim 19
Independent Claim
100 words
An apparatus for etching substrates comprising: an upper electrode coupled to an RF power source wherein said upper electrode is laterally supported by the housing structure of said apparatus; a lower electrode; a grid disposed between said upper electrode and said lower electrode, said grid and said upper electrode forming an upper chamber therebetween; said grid, being clamped to have the same potential at all times as the lower electrode and forming with said lower electrode a lower chamber therebetween; means for centrally introducing gases into said apparatus, and a gas mixing chamber that is formed in said upper chamber.
Claim 20
Independent Claim
77 words
An apparatus for etching substrates comprising: an upper electrode laterally supported by a housing structure of said apparatus and coupled to an RF power source; a lower electrode; a grid disposed between said upper electrode and said lower electrode, said grid and said upper electrode forming an upper chamber therebetween; and said grid being clamped to have the same potential at all times as the lower electrode and forming with said lower electrode a lower chamber therebetween.
Claim 21
Independent Claim
77 words
An apparatus for etching substrates comprising: an upper electrode laterally supported by a housing structure of said apparatus and coupled to an RF power source; a lower electrode; a grid disposed between said upper electrode and said lower electrode, said grid and said upper electrode forming an upper chamber therebetween; and said grid being clamped to have the same potential at all times as the lower electrode and forming with said lower electrode a lower chamber therebetween.
Claim 22
Dependent Claim
26 words
The apparatus of claim 16 wherein the lateral support for the upper electrode is part of the side wall of the housing structure of said apparatus.
Claim 23
Dependent Claim
16 words
The apparatus of claim 16 wherein said RF power source is applied through the lateral support.
Claim 24
Dependent Claim
18 words
The apparatus of claim 16 further comprising a gas mixing chamber that is formed in said upper chamber.
Claim 25
Dependent Claim
15 words
The apparatus of claim 16 further comprising means for centrally introducing gases into said apparatus.
Claim 26
Dependent Claim
19 words
The apparatus of claim 16 wherein said upper electrode is part of the mixing chamber and the RF chamber.
Claim 27
Independent Claim
88 words
An apparatus for etching substrates comprising: an upper electrode coupled to an RF power source wherein said upper electrode is laterally supported by the structure of said apparatus; a lower electrode; a grid disposed between said upper electrode and said lower electrode, said grid and said upper electrode forming an upper chamber therebetween; said grid being clamped to have the same potential at all times as the lower electrode and forming with said lower electrode a lower chamber therebetween; and means for centrally introducing gases into said apparatus.
Claim 28
Independent Claim
88 words
An apparatus for etching substrates comprising: an upper electrode coupled to an RF power source wherein said upper electrode is laterally supported by the structure of said apparatus; a lower electrode; a grid disposed between said upper electrode and said lower electrode, said grid and said upper electrode forming an upper chamber therebetween; said grid being clamped to have the same potential at all times as the lower electrode and forming with said lower electrode a lower chamber therebetween; and means for centrally introducing gases into said apparatus.
Claim 29
Independent Claim
37 words
The apparatus of claims 9, 15, 16, or 22 further comprising a lid being coupled to a first surface of said upper electrode such that said lid and said upper electrode define a gas mixing chamber therebetween.
Claim 30
Dependent Claim
14 words
The apparatus of claim 23 further comprising a gas source coupled to said lid.
Claim 31
Dependent Claim
14 words
The apparatus of claim 24 wherein said gas source comprises a fluorine gas source.
Claim 32
Dependent Claim
13 words
The apparatus of claim 25 wherein said flourine gas source comprises nitrogen tetraflouride.
Claim 33
Dependent Claim
13 words
The apparatus of claim 25 wherein said flourine gas source comprises carbon tetraflouride.
Claim 34
Dependent Claim
13 words
The apparatus of claim 25 wherein said flourine gas source comprises sulfur hexaflouride.
Claim 35
Independent Claim
95 words
The apparatus of claims 9, 22, 15, or 16 further comprising: an insulator coupled to a second surface of said upper electrode and to a first surface of said grid, said insulator, upper electrode, and grid defining said upper RF chamber therebetween; a wall of said lower chamber having a first end coupled to said insulator; and a base coupled to a second end of said lower chamber wall such that said base, lower chamber wall, and grid form said lower chamber therebetween, said lower electrode being disposed in the lower chamber on said base.
Claim 36
Dependent Claim
18 words
The apparatus of claim 29 further comprising a second insulator disposed between said base and said lower electrode.
Claim 37
Dependent Claim
16 words
The apparatus of claim 30 wherein said first and second insulators are comprised of aluminum oxide.
Claim 38
Independent Claim
87 words
An apparatus for etching substrates comprising: an upper electrode at one end of the apparatus having a laterally supported central portion coupled to an RF power source; a lower electrode; a grid disposed between said central portion of the upper electrode and said lower electrode, said grid and said central portion of the upper electrode forming an upper chamber therebetween; and said grid being clamped to have the same potential at all times as the lower electrode and forming with said lower electrode a lower chamber therebetween.
Claim 39
Independent Claim
87 words
An apparatus for etching substrates comprising: an upper electrode at one end of the apparatus having a laterally supported central portion coupled to an RF power source; a lower electrode; a grid disposed between said central portion of the upper electrode and said lower electrode, said grid and said central portion of the upper electrode forming an upper chamber therebetween; and said grid being clamped to have the same potential at all times as the lower electrode and forming with said lower electrode a lower chamber therebetween.
Claim 40
Dependent Claim
21 words
The apparatus of claim 32 wherein the lateral support for the upper electrode is a side wall portion of said apparatus.
Claim 41
Dependent Claim
16 words
The apparatus of claim 33 wherein said RF power source is applied through the lateral support.
Claim 42
Dependent Claim
30 words
The apparatus of claim 33 further comprising: the upper electrode having an end portion having a central opening therethrough, the central, sidewall and end portions forming a gas mixing chamber.
Claim 43
Independent Claim
126 words
An apparatus for etching substrates comprising: a hollow, upper electrode closing one end of the apparatus, coupled to an RF power source and having a central opening in an end wall portion leading to the hollow, a lower housing supporting a lower electrode closing the other end of the apparatus, an insulative central housing connecting the upper electrode and lower housing, a grid supported by a housing portion between the upper and lower electrodes, the grid and upper electrode forming an upper chamber therebetween, the grid and lower electrode forming a lower chamber therebetween and clamped to have the same potential at all times, and a plurality of openings in a central wall portion of the upper electrode leading from the hollow to the upper chamber.
Claim 44
Independent Claim
126 words
An apparatus for etching substrates comprising: a hollow, upper electrode closing one end of the apparatus, coupled to an RF power source and having a central opening in an end wall portion leading to the hollow, a lower housing supporting a lower electrode closing the other end of the apparatus, an insulative central housing connecting the upper electrode and lower housing, a grid supported by a housing portion between the upper and lower electrodes, the grid and upper electrode forming an upper chamber therebetween, the grid and lower electrode forming a lower chamber therebetween and clamped to have the same potential at all times, and a plurality of openings in a central wall portion of the upper electrode leading from the hollow to the upper chamber.
Claim 45
Dependent Claim
17 words
The apparatus of claim 16 wherein said housing and said upper electrode define a gas mixing chamber.
Claim 46
Dependent Claim
34 words
The apparatus of claim 37 further comprising a reactant gas source coupled to said housing such that a reactant gas passes through a gas opening defined by said housing into said gas mixing chamber.
Claim 47
Dependent Claim
14 words
The apparatus of claim 38 wherein said reactant gas comprises a fluorine source gas.
Claim 48
Dependent Claim
13 words
The apparatus of claim 39 wherein said fluorine source gas comprises nitrogen trifluoride.
Claim 49
Dependent Claim
13 words
The apparatus of claim 39 wherein said fluorine source gas comprises carbon tetraflouride.
Claim 50
Dependent Claim
13 words
The apparatus of claim 39 wherein said fluorine source gas comprises sulfur hexafluoride.
Claim 51
Dependent Claim
18 words
The apparatus of claim 38 further comprising the upper electrode having a plurality of symmetrically spaced openings therethrough.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-05-10 | 1996-11-09 | 1997-05-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-05-10 | 2000-11-09 | 2001-05-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-05-10 | 2004-11-09 | 2005-05-11 | $7700.00 | Window Closed / Lapsed |