US5204166A
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Thick film resistor composition, hybrid IC using the composition, and process for producing the hybrid IC
Assignee: Hitachi Ltd
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Filing: 1991-02-25
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Granted: 1993-04-20
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Expires: 2011-02-25
Abstract
Abstract The present invention relates to a thick film resistor material which is suitable especially for thick film hybrid IC having conductor, resistor, semiconductor element and the like in which Cu is used as the conductor and furthermore, a thick film resistor composition which can be fired in a reducing atmosphere. The present invention further relates to a thick film hybrid IC using the thick film resistor composition as a resistor and a method for making it.
Inventors
- 👤 Osamu Ito
- 👤 Tadamichi Asai
- 👤 Toshio Ogawa
- 👤 Noritaka Kamimura
- 👤 Yoshishige Endou
- 👤 Takao Kobayashi
- 👤 Hiromi Isomae
- 👤 Masaki Kamiakutsu
- 👤 Michio Otani
- 👤 Katsuo Ebisawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 16:27
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/80; H10D86/85; H01; H01C; H01C17/00; H01C17/06; H01C17/065; H01C17/06506; H01C17/06513; H01C17/06553; H01C17/06566; Y; Y10; Y10S; Y10S428/00; Y10S428/901; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24917; Y10T428/25; Y10T428/256
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
54 words
A thick film resistor composition comprising a metal boride, a glass and an organic vehicle which contains at least one of metallic cobalt and a cobalt oxide in an amount of 0.1-10 parts by weight in terms of cobalt per 100 parts by weight of the mixture of the metal boride and the glass.
Claim 2
Dependent Claim
54 words
A thick film resistor composition comprising a metal boride, a glass and an organic vehicle which contains at least one of metallic cobalt and a cobalt oxide in an amount of 0.1-10 parts by weight in terms of cobalt per 100 parts by weight of the mixture of the metal boride and the glass.
Claim 3
Dependent Claim
30 words
The thick film resistor composition according to claim 1, wherein the mixture of metal boride and glass comprises 40-95 vol % of glass and the remainder of the metal boride.
Claim 4
Dependent Claim
43 words
The thick film resistor composition according to claim 1, wherein the metal boride has an average particle size of 0.5-3 μm, the glass has an average particle size of 5-6 μm, and the cobalt oxide has an average particle size of 1-5 μm.
Claim 5
Dependent Claim
15 words
The thick film resistor composition according to claim 1, wherein the glass is borosilicate glass.
Claim 6
Dependent Claim
78 words
A thick film resistor composition which contains a boride of at least one element selected from the group consisting of rare earth elements, Group IV elements, Group V elements, Group VI elements and Group VIII elements, a glass, at least one of metallic cobalt and a cobalt oxide in an amount of 0.1-10 parts by weight in terms of cobalt per 100 parts by weight of the mixture of the boride and the glass, and an organic vehicle.
Claim 7
Dependent Claim
78 words
A thick film resistor composition which contains a boride of at least one element selected from the group consisting of rare earth elements, Group IV elements, Group V elements, Group VI elements and Group VIII elements, a glass, at least one of metallic cobalt and a cobalt oxide in an amount of 0.1-10 parts by weight in terms of cobalt per 100 parts by weight of the mixture of the boride and the glass, and an organic vehicle.
Claim 8
Dependent Claim
30 words
The thick film resistor composition according to claim 5, wherein the mixture of boride and glass comprises 40-95 vol % of the glass and the remainder of the metal boride.
Claim 9
Dependent Claim
42 words
The thick film resistor composition according to claim 5, wherein the boride has an average particle size of 0.5-3 μm, the glass has an average particle size of 5-6 μm, and the cobalt oxide has an average particle size of 1-5 μm.
Claim 10
Dependent Claim
15 words
The thick film resistor composition according to claim 5, wherein the glass is borosilicate glass.
Claim 11
Dependent Claim
22 words
The thick film resistor composition according to claim 5, wherein the organic vehicle is butylcarbitol acetate in which acrylic resin as dissolved.
Claim 12
Dependent Claim
75 words
A hybrid IC which comprises a substrate having thereon a copper conductor circuit and a thick film resistor formed in contact with the conductor circuit, wherein the thick film resistor is a sintered body of a composition comprising 100 parts by weight of a mixture of a metal boride and a glass and at least one of metallic cobalt and a cobalt oxide in an amount of 0.1-10 parts by weight in terms of cobalt.
Claim 13
Dependent Claim
75 words
A hybrid IC which comprises a substrate having thereon a copper conductor circuit and a thick film resistor formed in contact with the conductor circuit, wherein the thick film resistor is a sintered body of a composition comprising 100 parts by weight of a mixture of a metal boride and a glass and at least one of metallic cobalt and a cobalt oxide in an amount of 0.1-10 parts by weight in terms of cobalt.
Claim 14
Dependent Claim
33 words
The hybrid IC according to claim 10, wherein the mixture of metal boride and glass in the thick film resistor comprises 40-95 vol % of glass and the remainder of the metal boride.
Claim 15
Dependent Claim
46 words
The hybrid IC according to claim 10, wherein in the thick film resistor the metal boride has an average particle size of 0.5-3 μm, the glass has an average particle size of 5-6 μm, and the cobalt oxide has an average particle size of 1-5 μm.
Claim 16
Dependent Claim
18 words
The hybrid IC according to claim 10, wherein the glass in the thick film resistor is borosilicate glass.
Claim 17
Dependent Claim
109 words
A hybrid IC which comprises a substrate having thereon a copper conductor circuit and a thick film resistor formed in contact with the conductor circuit wherein the thick film resistor is a sintered body of a composition comprising a boride of at least one element selected from the group consisting of rare earth elements, Group IV elements, Group V elements, Group VI elements and Group VIII elements, a glass, at least one of metallic cobalt and a cobalt oxide in an amount of 0.1-10 parts by weight in terms of cobalt per 100 parts by weight of the mixture of the boride and the glass, and an organic vehicle.
Claim 18
Dependent Claim
109 words
A hybrid IC which comprises a substrate having thereon a copper conductor circuit and a thick film resistor formed in contact with the conductor circuit wherein the thick film resistor is a sintered body of a composition comprising a boride of at least one element selected from the group consisting of rare earth elements, Group IV elements, Group V elements, Group VI elements and Group VIII elements, a glass, at least one of metallic cobalt and a cobalt oxide in an amount of 0.1-10 parts by weight in terms of cobalt per 100 parts by weight of the mixture of the boride and the glass, and an organic vehicle.
Claim 19
Dependent Claim
33 words
The hybrid IC according to claim 14, wherein the mixture of boride and glass in the thick film resistor comprises 40-95 vol % of the glass ad the remainder of the metal boride.
Claim 20
Dependent Claim
45 words
The hybrid IC according to claim 14, wherein in the thick film resistor, the boride has an average particle size of 0.5-3 μm, the glass has an average particle size of 5-6 μm, and the cobalt oxide has an average particle size of 1-5 μm.
Claim 21
Dependent Claim
18 words
The hybrid IC according to claim 14, wherein the glass in the thick film resistor is borosilicate glass.
Claim 22
Dependent Claim
43 words
The thick film resistor composition according to claim 2, wherein the metal boride has an average particle size of 0.5-3 μm, the glass has an average particle size of 5-6 μm and the cobalt oxide has an average particle size of 1-5 μm.
Claim 23
Dependent Claim
42 words
The thick film resistor composition according to claim 6, wherein the boride has an average particle size of 0.5-3 μm, the glass has an average particle size of 5-6 μm and the cobalt oxide has an average particle size of 1-5 μm.
Claim 24
Dependent Claim
46 words
The hybrid IC according to claim 11, wherein in the thick film resistor, the metal boride has an average particle size of 0.5-3 μm, the glass has an average particle size of 5-6 μm and the cobalt oxide has an average particle size of 1-5 μm.
Claim 25
Dependent Claim
44 words
The hybrid IC according to claim 15, wherein the thick film resistor, the boride has an average particle size of 0.5-3 μm, the glass has an average particle size of 5-6 μm and the cobalt oxide has an average particle size of 1-5 μm.
Claim 26
Dependent Claim
42 words
The thick film resistor composition according to claim 1, wherein the metal boride is selected from the group consisting of LaB 6 , TiB 2 , ZrB 2 , TaB 2 , MoB, WB, FeB, NiB, HfB 2 and NbB 2 .
Claim 27
Dependent Claim
40 words
The hybrid IC according to claim 10, wherein the metal boride is selected from the group consisting of LaB 6 , TiB 2 , ZrB 2 , TaB 2 , MoB, WB, FeB, NiB, HfB 2 and NbB 2 .
References Cited (Backward Citations)
US4168344A
Cited
US4695504A
Cited
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