Abstract A method of manufacturing a semiconductor device comprising a lead frame (2A-2I) and a semiconductor crystal (3) provided on one of the conductors (2C) and comprising at least one semiconductor switching element, and electrically conducting connections (4A-4I from the crystal (3) to the conductors (2). The conductors (2) are stamped from a metal strip, after which the tag tips (2a) are coined between a coining die (8) and an anvil (6) to remove irregularities. After that, the conducting connections (4A-4I) are secured to the tag tips (2a) by ultrasonic welding. According to the invention, the anvil surface (5A) and the die surface (7) parallel thereto enclose a downward angle (α) with the adjoining portion (5B) of the anvil surface, which angle is preferably at least 0.50 and at most 5°. The invention also relates to a device for carrying out the method, comprising an anvil (6) and a coining die (8), the anvil surface (5) comprising two adjoining flat portions (5A, 5B) which form an obtuse angle (β) of preferably at least 175° and at most 179.5° enclosing the anvil material (6), the die surface (7) of the coining die (8) being practically parallel to one of the these portions (5A).
A method of manufacturing a semiconductor device of the type including a plurality of conductors formed of metal strips, a semiconductor crystal provided on one of said plurality of conductors, and a plurality of electrically conducting connections from said semiconductor crystal to remaining ones of said plurality of conductors, said method comprising the steps of (a) forming each of said plurality of conductors from a metal strip, (b) providing an anvil having a surface with two adjoining surface portions, said two adjoining surface portions being at an angle with respect to each other, (c) providing ends of said remaining ones of said plurality of conductors between one of said two surfaces and a matching sloped coining die surface, (d) plastically deforming said ends to impose said angle between said ends and said remaining ones of said plurality of conductors to form a deformed plurality of conductors, (e) providing each of said deformed plurality of conductors between a heating member and a clamping member to flatten and heat said deformed plurality of conductors over their entire lengths, and (f) applying ultrasonic energy to said ends to connect said plurality of electrically conducting connections to said ends.
Claim 2
Independent Claim
195 words
A method of manufacturing a semiconductor device of the type including a plurality of conductors formed of metal strips, a semiconductor crystal provided on one of said plurality of conductors, and a plurality of electrically conducting connections from said semiconductor crystal to remaining ones of said plurality of conductors, said method comprising the steps of (a) forming each of said plurality of conductors from a metal strip, (b) providing an anvil having a surface with two adjoining surface portions, said two adjoining surface portions being at an angle with respect to each other, (c) providing ends of said remaining ones of said plurality of conductors between one of said two surfaces and a matching sloped coining die surface, (d) plastically deforming said ends to impose said angle between said ends and said remaining ones of said plurality of conductors to form a deformed plurality of conductors, (e) providing each of said deformed plurality of conductors between a heating member and a clamping member to flatten and heat said deformed plurality of conductors over their entire lengths, and (f) applying ultrasonic energy to said ends to connect said plurality of electrically conducting connections to said ends.
Claim 3
Dependent Claim
17 words
A method according to claim 1, wherein said angle is at least 0.5° and at most 5°.