US5200362A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of attaching conductive traces to an encapsulated semiconductor die using a removable transfer film
Assignee: NXP USA Inc
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Filing: 1991-09-09
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Granted: 1993-04-06
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Expires: 2011-09-09
Abstract
Abstract A semiconductor device and a method for its fabrication are disclosed. In a preferred embodiment, a pattern of conductive traces is formed on a film of transfer material. A semiconductor device die is interconnected to the pattern of conductive traces and a resin body is formed around the die, one side of the conductive traces, and the interconnecting means. The film of transfer material forms, at this stage of the process, one side of the package. The film of transfer material is then peeled from the pattern of conductive traces and the resin body to expose the other side of the pattern of conductive traces. Contact to the other side of the pattern provides electrical contact to the senmiconductor device die.
Inventors
- 👤 Paul T. Lin
- 👤 Michael B. McShane
- 👤 Sugio Uchida
- 👤 Takehi Sato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 18:52
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/01; H10W74/019; H10P; H10P72/00; H10P72/70; H10P72/74; H10W70/00; H10W70/60; H10W70/699; H05; H05K; H05K3/00; H05K3/30; H05K3/32; H05K3/34; H05K3/341; H05K3/3431; H10W72/00; H10W72/01; H10W72/0198; H10W72/071; H10W72/072; H10W72/07251; H10W72/075; H10W72/07502; H10W72/07504; H10W72/20; H10W72/50; H10W72/531; H10W72/536; H10W72/851; H10W72/874; H10W72/879; H10W72/884; H10W90/00; H10W90/701; H10W90/731; H10W90/736; H10W90/751; H10W90/754; H10W90/756; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/4913; Y10T29/49146
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
88 words
A process for fabricating a semiconductor device comprising the steps of: providing a transfer film; providing a pattern of conductive traces on said transfer film; providing a semiconductor device die; forming electrical interconnections between said pattern of conductive traces and said semiconductor device die; providing a resin material on one side of said transfer film to encapsulate said semiconductor device die, said electrical interconnections, and a portion of said pattern of conductive traces; and removing said transfer film to expose one side of said pattern of conductive traces.
Claim 2
Dependent Claim
88 words
A process for fabricating a semiconductor device comprising the steps of: providing a transfer film; providing a pattern of conductive traces on said transfer film; providing a semiconductor device die; forming electrical interconnections between said pattern of conductive traces and said semiconductor device die; providing a resin material on one side of said transfer film to encapsulate said semiconductor device die, said electrical interconnections, and a portion of said pattern of conductive traces; and removing said transfer film to expose one side of said pattern of conductive traces.
Claim 3
Dependent Claim
30 words
The process of claim 1 further comprising the step of forming a layer of insulating material over portions of said one side and leaving contact areas of said pattern exposed.
Claim 4
Dependent Claim
25 words
The process of claim 1 further comprising the step of laminating said semiconductor device die and said resin material between two sheets of plastic material.
Claim 5
Dependent Claim
18 words
The process of claim 3 wherein said step of laminating leaves exposed a portion of said one side.
Claim 6
Dependent Claim
17 words
The process of claim 4 further comprising the step of plating contact metal onto said exposed portion.
Claim 7
Dependent Claim
43 words
The process of claim 1 wherein said step of forming a pattern of conductive traces comprises the steps of: forming a continuous layer of conductive material on said transfer film; and selectively etching said continuous layer to form said pattern of conductive traces.
Claim 8
Dependent Claim
24 words
The process of claim 6 wherein said step of forming a continuous layer comprises laminating a layer of conductive foil to said transfer film.
Claim 9
Dependent Claim
23 words
The process of claim 6 wherein said step of forming a continuous layer comprises evaporating a layer of metal onto said transfer film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-04-05 | 1996-10-05 | 1997-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-04-05 | 2000-10-05 | 2001-04-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-04-05 | 2004-10-05 | 2005-04-06 | $7700.00 | Window Closed / Lapsed |