Spin castable mixtures useful for making deep-UV contrast enhancement layers

Claim 1

Spin castable mixtures useful for applying contrast enhancement layers on photoresists capable of absorbing in the 200-300 nm region, wherein the contrast enhancement layers, upon being photobleached, are readily removable from the surfaces of the photoresists by stripping with a solvent, the spin castable mixtures comprising, by weight, (A) 100 parts of an inert solvent, (B) 2 to 20 parts of an inert organic binder, and (C) 2 to 20 parts of a nitrone of the formula, ##STR3## wherein R is selected from the group consisting of hydrogen, a C.sub.(1-8) alkyl radical, a C.sub.(3-5) divlalent alkylene radical, and a C.sub.(3-5) divalent alkylene radical substituted with one to three monovalent radicals selected from the group consisting of cyano, halogen, carbalkoxy, nitro, amino, alkylamino, and mixtures thereof, wherein X is hydrogen or a monovalent electron-withdrawing radical selected from the group consisting of carbalkoxy, acyl, and oxirane, and wherein Y is (i) hydrogen, or (ii) a monovalent aliphatic group selected from the group consisting of R 1 and ##STR4## wherein R 1 is a C.sub.(1-8) alkyl radical, wherein R 2 and R 3 are monovalent radicals selected from the group consisting of hydrogen and C.sub.(1-8) alkyl, and wherein Z is selected from the group consisting of hydrogen, C.sub.(1-8) alkyl radical, and an electron-withdrawing radical selected from the group consisting of nitrile, carbalkoxy, acyl, or (iii) a C.sub.(3-5) divalent alkylene radical, or (iv) a C.sub.(3-5) divalent alkylene radical substituted with one to three monovalent radicals selected from the group consisting of cyano, halogen, carbalkoxy, nitro, amino, alkylamino, and mixtures thereof, with the proviso that R and Y are divalent radicals only when both radicals react to form a C.sub.(5-7) ring.

Claim 9

A method for making patterned photoresists which comprises, (D) spin casting a nitrone mixture onto the surface of a photoresist to produce a contrast enhancement layer-photoresist composite, (E) projecting an aerial image utilizing UV light (200-300 nm) onto the surface of the composite of (D), (F) stripping the resulting photobleached contrast enhancement layer from the surface of the photoresist, and (G) developing the photoresist layer, where the spin castable mixture comprises by weight, (A) 100 parts of an inert solvent, (B) 2 to 20 parts of an inert organic binder, and (C) 2 to 20 parts of a nitrone of the formula, ##STR5## wherein R is selected from the group consisting of hydrogen, a C.sub.(1-8) alkyl radical, a C.sub.(3-5) divalent alkylene radical, and a C.sub.(3-5) divalent alkylene radical substituted with one to three monovalent radicals selected from the group consisting of cyano, halogen, carbalkoxy, nitro, amino, alkylamino, and mixtures thereof, wherein X is hydrogen or a monovalent electron-withdrawing radical selected from the group consisting of carbalkoxy, acyl, and oxirane, and wherein Y is (i) hydrogen, or (ii) a monovalent aliphatic group selected from the group consisting of R 1 and ##STR6## wherein R 1 is a C.sub.(1-8) alkyl radical, wherein R 2 and 3 are monovalent radicals selected from the group consisting of hydrogen and C.sub.(1-8) alkyl, and wherein Z is selected from the group consisting of hydrogen, C.sub.(1-8) alkyl radical, and an electron-withdrawing radical selected from the group consisting of nitrile, carbalkoxy, acyl, or (iii) a C.sub.(3-5) divalent alkylene radical, or (iv) a C.sub.(3-5) divalent alkylene radical substituted with one to three monovalent radicals selected from the group consisting of cyano, halogen, carbalkoxy, nitro, amino, alkylamino, and mixtures thereof, with the proviso that R and Y are divalent radicals only when both radicals react to form a C.sub.(5-7) ring.

Claim 10

A method for making patterned photoresists which comprises, (D) spin casting a nitrone mixture onto the surface of a photoresist to produce a contrast enhancement layer-photoresist composite, (E) projecting an aerial image utilizing UV light (200-300 nm) onto the surface of the composite of (D), (F) stripping the resulting photobleached contrast enhancement layer from the surface of the photoresist, and (G) developing the photoresist layer, where the spin castable mixture comprises by weight, (A) 100 parts of an inert solvent, (B) 2 to 20 parts of an inert organic binder, and (C) 2 to 20 parts of a nitrone of the formula, ##STR5## wherein R is selected from the group consisting of hydrogen, a C.sub.(1-8) alkyl radical, a C.sub.(3-5) divalent alkylene radical, and a C.sub.(3-5) divalent alkylene radical substituted with one to three monovalent radicals selected from the group consisting of cyano, halogen, carbalkoxy, nitro, amino, alkylamino, and mixtures thereof, wherein X is hydrogen or a monovalent electron-withdrawing radical selected from the group consisting of carbalkoxy, acyl, and oxirane, and wherein Y is (i) hydrogen, or (ii) a monovalent aliphatic group selected from the group consisting of R 1 and ##STR6## wherein R 1 is a C.sub.(1-8) alkyl radical, wherein R 2 and 3 are monovalent radicals selected from the group consisting of hydrogen and C.sub.(1-8) alkyl, and wherein Z is selected from the group consisting of hydrogen, C.sub.(1-8) alkyl radical, and an electron-withdrawing radical selected from the group consisting of nitrile, carbalkoxy, acyl, or (iii) a C.sub.(3-5) divalent alkylene radical, or (iv) a C.sub.(3-5) divalent alkylene radical substituted with one to three monovalent radicals selected from the group consisting of cyano, halogen, carbalkoxy, nitro, amino, alkylamino, and mixtures thereof, with the proviso that R and Y are divalent radicals only when both radicals react to form a C.sub.(5-7) ring.