US5187147A
Expired / Lapsed
US
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Method for producing freestanding high Tc superconducting thin films
Assignee: Florida State University
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Filing: 1991-05-31
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Granted: 1993-02-16
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Expires: 2011-05-31
Abstract
Abstract A process for producing a freestanding high Tc superconducting thin film is disclosed, which comprises providing a carbon substrate, depositing a high Tc superconducting thin film on the substrate and removing the carbon substrate by converting the carbon substrate to a gaseous composition at a temperature insufficient to cause thermal damage to said superconducting thin film but greater then 500° C. in an oxygen containing atmosphere.
Inventors
- 👤 Hon-Kie Ng
- 👤 Snezana Kilibarda-Dalafave
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:31
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/24; C23C14/28; C04; C04B; C04B35/00; C04B35/01; C04B35/45; C23C14/0005; C23C14/06; C23C14/08; C23C14/087; C23C14/58; C23C14/5806; C23C14/5846; C23C14/5853; H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; Y; Y10; Y10S; Y10S505/00; Y10S505/725; Y10S505/73; Y10S505/732
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
92 words
A process for producing a freestanding thin film of high Tc superconducting material, the process comprising: providing a carbon substrate, depositing the high Tc superconducting materials onto the substrate as a thin film to form a composite of the substrate and the thin film of the high Tc superconducting materials, and removing the substrate from the composite by converting the substrate to a gaseous composition at a temperature insufficient to cause thermal damage to said thin film of high Tc superconducting material but greater than 500° C. in an oxygen containing atmosphere.
Claim 2
Dependent Claim
92 words
A process for producing a freestanding thin film of high Tc superconducting material, the process comprising: providing a carbon substrate, depositing the high Tc superconducting materials onto the substrate as a thin film to form a composite of the substrate and the thin film of the high Tc superconducting materials, and removing the substrate from the composite by converting the substrate to a gaseous composition at a temperature insufficient to cause thermal damage to said thin film of high Tc superconducting material but greater than 500° C. in an oxygen containing atmosphere.
Claim 3
Dependent Claim
41 words
A process as set forth in claim 1 comprising the additional step of annealing said thin film by heating said thin film to a temperature above about 700° C. and holding it at that temperature for at least about 4 minutes.
Claim 4
Dependent Claim
26 words
A process as set forth in claim 2 comprising the additional step of cooling said thin film at a rate of about 4° C. per minute.
Claim 5
Dependent Claim
19 words
A process as set forth in claim 1 wherein the high Tc superconducting material is deposited by laser ablation.
Claim 6
Dependent Claim
22 words
A process as set forth in claim 1 wherein said depositing and said removing steps are accomplished within a single common chamber.
Claim 7
Dependent Claim
28 words
A process as set forth in claim 1 comprising the additional step of providing a holder and placing said substrate onto said holder prior to said depositing step.
Claim 8
Dependent Claim
29 words
A process as set forth in claim 1 wherein the thickness of said thin film of high Tc superconducting material is between about 0.08 micron and about 2.0 microns.
Claim 9
Dependent Claim
32 words
A process as set forth in claim 6 wherein said holder is constructed of material selected from the group of materials comprising Al 2 O 3 , MgO and SrTiO 3 .
Claim 10
Dependent Claim
40 words
A process as set forth in claim 6 wherein said holder is between about 0.5 and about 5 mm thick and has two opposed sides, each having an area between about 4 mm 2 and about 300 mm 2 .
Claim 11
Dependent Claim
110 words
A process for producing a freestanding thin film of YBa 2 Cu 3 O x , the process comprising: providing a carbon substrate, depositing the YBa 2 Cu 3 O x onto the carbon substrate as a thin film to form a composite of the carbon substrate and the thin film of the YBa 2 Cu 3 O x , and removing the carbon substrate from the composite by exposing the composite to an oxygen containing atmosphere and a temperature insufficient to cause thermal damage to the thin film of YBa 2 Cu 3 O x but greater than 500° C. whereby the carbon is converted to a gaseous composition.
Claim 12
Dependent Claim
110 words
A process for producing a freestanding thin film of YBa 2 Cu 3 O x , the process comprising: providing a carbon substrate, depositing the YBa 2 Cu 3 O x onto the carbon substrate as a thin film to form a composite of the carbon substrate and the thin film of the YBa 2 Cu 3 O x , and removing the carbon substrate from the composite by exposing the composite to an oxygen containing atmosphere and a temperature insufficient to cause thermal damage to the thin film of YBa 2 Cu 3 O x but greater than 500° C. whereby the carbon is converted to a gaseous composition.
Claim 13
Dependent Claim
41 words
A process as set forth in claim 10 comprising the additional step of annealing said thin film by heating said thin film to a temperature above about 700° C. and holding it at that temperature for at least about 4 minutes.
Claim 14
Dependent Claim
27 words
A process as set forth in claim 11 comprising the additional step of controlledly cooling said thin film at a rate of about 4° C. per minute.
Claim 15
Dependent Claim
38 words
A process as set forth in claim 10 wherein said depositing is accomplished by a method selected from the group of methods comprising laser ablation, sputtering, backscattering, molecular beam epitaxy, electron beam deposition, thermal evaporation and spray pyrolysis.
Claim 16
Dependent Claim
48 words
A process as set forth in claim 10 wherein said depositing is accomplished by laser ablation of said YBa 2 Cu 3 O x from a bulk source of YBa 2 Cu 3 O x and deposition of ablated YBa 2 Cu 3 O x onto said substrate.
Claim 17
Dependent Claim
21 words
A process as set forth in claim 10 wherein said depositing and said removing steps are accomplished within the same chamber.
Claim 18
Dependent Claim
28 words
A process as set forth in claim 10 comprising the additional step of providing a holder and placing said substrate onto said holder prior to said depositing step.
Claim 19
Dependent Claim
21 words
A process as set forth in claim 16 wherein said holder is constructed of Y(Pr)Ba 2 Cu 3 O x .
Claim 20
Dependent Claim
32 words
A process as set forth in claim 16 wherein said holder is constructed of material selected from the group of materials comprising Al 2 O 3 , MgO and SrTiO 3 .
Claim 21
Dependent Claim
40 words
A process as set forth in claim 16 wherein said holder is between about 0.5 and about 5 mm thick and has two opposed sides, each having an area between about 4 mm 2 and about 300 mm 2 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-02-16 | 1996-08-17 | 1997-02-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-02-16 | 2000-08-17 | 2001-02-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-02-16 | 2004-08-17 | 2005-02-16 | $7700.00 | Window Closed / Lapsed |