US5184205A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having multi-layered wiring, and method of manufacturing the same
Assignee: Toshiba Corp
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Filing: 1991-06-06
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Granted: 1993-02-02
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Expires: 2011-06-06
Abstract
Abstract A semiconductor device comprising a substrate, a first metal wiring layer made of aluminum alloy and formed on the substrate, a conductive film made of doped polysilicon and formed on a selected part of the first metal wiring layer, an inter-layer insulation film made of plasma SiO 2 and formed on the conductive film and the first metal wiring layer, a contact hole formed in the inter-layer insulation film and being larger than the conductive film, and a second metal wiring layer made of aluminum alloy, extending through the contact hole, and connected to the conductive film.
Inventors
- 👤 Hideki Shibata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 14:44
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W20/42
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
137 words
A semiconductor device comprising: a semiconductor substrate; a first metal wiring layer made of Al alloy and formed on said substrate; a conductive film made of one material selected from the group consisting of polysilicon and silicide of metal having a high melting point, said conductive film being formed on a predetermined portion of said first metal wiring layer; an inter-layer insulating film formed on said first metal wiring layer and said conductive film; a contact hole formed in said inter-layer insulation film and having a diameter smaller than said conductive film; a second metal wiring layer made of metal having a high melting point, provided in said contact hole, and connected to said conductive film; and a third metal wiring layer made of Al alloy, formed on said second metal wiring layer, and electrically connected thereto.
Claim 2
Dependent Claim
137 words
A semiconductor device comprising: a semiconductor substrate; a first metal wiring layer made of Al alloy and formed on said substrate; a conductive film made of one material selected from the group consisting of polysilicon and silicide of metal having a high melting point, said conductive film being formed on a predetermined portion of said first metal wiring layer; an inter-layer insulating film formed on said first metal wiring layer and said conductive film; a contact hole formed in said inter-layer insulation film and having a diameter smaller than said conductive film; a second metal wiring layer made of metal having a high melting point, provided in said contact hole, and connected to said conductive film; and a third metal wiring layer made of Al alloy, formed on said second metal wiring layer, and electrically connected thereto.
Claim 3
Dependent Claim
162 words
A semiconductor device comparing: a semiconductor substrate; a first metal wiring layer made of Al alloy and formed on said semiconductor substrate; a conductive film made of one material selected from the group consisting of polysilicon and silicide of metal having a high melting point, said conductive film being formed on a predetermined portion of said first metal wiring layer; an inter-layer insulating film formed on said first metal wiring layer and said conductive film; a contact hole formed in said inter-layer insulation film and having a diameter smaller than said conductive film; a second metal wiring layer made of metal having a high-melting point and provided in a partial region within said contact hole; a third metal wiring layer made of metal having a high melting point and formed on said second metal wiring layer; and a fourth metal wiring layer made of Al alloy, formed on said third metal wiring layer, and electrically connected to said third metal wiring layer.
Claim 4
Dependent Claim
162 words
A semiconductor device comparing: a semiconductor substrate; a first metal wiring layer made of Al alloy and formed on said semiconductor substrate; a conductive film made of one material selected from the group consisting of polysilicon and silicide of metal having a high melting point, said conductive film being formed on a predetermined portion of said first metal wiring layer; an inter-layer insulating film formed on said first metal wiring layer and said conductive film; a contact hole formed in said inter-layer insulation film and having a diameter smaller than said conductive film; a second metal wiring layer made of metal having a high-melting point and provided in a partial region within said contact hole; a third metal wiring layer made of metal having a high melting point and formed on said second metal wiring layer; and a fourth metal wiring layer made of Al alloy, formed on said third metal wiring layer, and electrically connected to said third metal wiring layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-02-02 | 1996-08-03 | 1997-02-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-02-02 | 2000-08-03 | 2001-02-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-02-02 | 2004-08-03 | 2005-02-02 | $7700.00 | Window Closed / Lapsed |