US5184200A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film semiconductor device with particular grain size
Assignee: Canon Inc
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Filing: 1992-03-26
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Granted: 1993-02-02
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Expires: 2012-03-26
Abstract
Abstract A semiconductor device comprises, at least, an insulative layer; a semiconductor layer provided in contact with the insulative layer; first and second electrodes provided in contact with the semiconductor layer; and a third electrode provided through the insulative layer. The semiconductor layer has a crystallite layer whose average grain diameter lies within a range from 50 to 350 Å and an amorphous layer.
Inventors
- 👤 Masato Yamanobe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 19:54
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/164; H10F77/1642; H10F30/00; H10F30/20; H10F30/21; H10F30/28; H10F30/282; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/546; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S148/00; Y10S148/15
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
83 words
A semiconductor device comprising at least: an insulative layer; a semiconductor layer provided in contact with a first surface of said insulative layer; first and second electrodes provided in contact with said semiconductor layer; and a third electrode provided in contact with a second surface of said insulative layer, said second surface being opposite to said first surface, wherein said semiconductor layer has a crystallite layer whose average grain diameter lies within a range from 50 to 350 Å and an amorphous layer.
Claim 2
Dependent Claim
83 words
A semiconductor device comprising at least: an insulative layer; a semiconductor layer provided in contact with a first surface of said insulative layer; first and second electrodes provided in contact with said semiconductor layer; and a third electrode provided in contact with a second surface of said insulative layer, said second surface being opposite to said first surface, wherein said semiconductor layer has a crystallite layer whose average grain diameter lies within a range from 50 to 350 Å and an amorphous layer.
Claim 3
Dependent Claim
23 words
A semiconductor device according to claim 1, wherein said crystallite layer of said semiconductor layer is arranged on said insulative layer first surface.
Claim 4
Dependent Claim
17 words
A semiconductor device according to claim 1, wherein said semiconductor layer contains at least silicon and hydrogen.
Claim 5
Dependent Claim
47 words
A semiconductor device according to claim 1, further comprising: a second insulative layer provided in contact with said first and second electrodes, said first and second electrodes being between said first and second insulative layers; and a fourth electrode provided in contact with said second insulative layer.
Claim 6
Dependent Claim
23 words
A semiconductor device according to claim 4, wherein said crystallite layer of said semiconductor layer is arranged facing toward said second insulative layer.
Claim 7
Dependent Claim
90 words
A photoelectric converting apparatus comprising: a semiconductor device having at least an insulative layer having first and second opposed surfaces, a semiconductor layer provided in contact with said first surface of said insulative layer, first and second electrodes provided in contact with said semiconductor layer, and a third electrode provided in contact with said second surface of said insulative layer; and a photoelectric converting device, wherein said semiconductor layer has a crystallite layer whose average grain diameter lies within a range from 50 to 350 Å and an amorphous layer.
Claim 8
Dependent Claim
90 words
A photoelectric converting apparatus comprising: a semiconductor device having at least an insulative layer having first and second opposed surfaces, a semiconductor layer provided in contact with said first surface of said insulative layer, first and second electrodes provided in contact with said semiconductor layer, and a third electrode provided in contact with said second surface of said insulative layer; and a photoelectric converting device, wherein said semiconductor layer has a crystallite layer whose average grain diameter lies within a range from 50 to 350 Å and an amorphous layer.
Claim 9
Dependent Claim
21 words
An apparatus according to claim 6, wherein said crystallite layer of said semiconductor layer is arranged facing toward said insulative layer.
Claim 10
Dependent Claim
16 words
An apparatus according to claim 6, wherein said semiconductor layer contains at least silicon and hydrogen.
Claim 11
Dependent Claim
46 words
An apparatus according to claim 6, further comprising: a second insulative layer provided in contact with said first and second electrodes, said first and second electrodes being between said first and second insulative layers; and a fourth electrode provided in contact with said second insulative layer.
Claim 12
Dependent Claim
22 words
An apparatus according to claim 9, wherein said crystallite layer of said semiconductor layer is arranged facing toward said second insulative layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-02-02 | 1996-08-03 | 1997-02-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-02-02 | 2000-08-03 | 2001-02-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-02-02 | 2004-08-03 | 2005-02-02 | $7700.00 | Window Closed / Lapsed |