US5172189A
Expired / Lapsed
US
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Exposure apparatus
Assignee: Canon Inc
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Filing: 1991-04-04
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Granted: 1992-12-15
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Expires: 2011-04-04
Abstract
Abstract An exposure apparatus includes a stage for carrying thereon a wafer; an exposure system for projecting radiation energy to the wafer to print a pattern thereon; and a detection optical system having a sigma value defined as the ratio of the diameter of an image of an aperture of a stop to the diameter of the aperture of the stop for projecting a radiation beam to the wafer and for receiving a reflection beam reflected from the wafer to detect a mark of the wafer which is defined by a level difference on the wafer, the detection optical system including an adjuster for changing the sigma value in accordance with the level difference defining the mark.
Inventors
- 👤 Noriyuki Mitome
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 17:34
CPC Classifications
G; G03; G03F; G03F9/00; G03F9/70; G03F9/7088
Claims Analysis
Total Claims: 40
Claim 1
Independent Claim
92 words
An exposure apparatus, comprising: a stage for carrying thereon a wafer; an exposure system for projecting a radiation energy to the wafer to print a pattern thereon; and a detection optical system having a sigma value, for projecting a radiation beam to the wafer and for receiving a reflection beam reflected from the wafer to detect a mark of the wafer which is defined by a level difference on the wafer, said detection optical system comprising an adjuster for changing the sigma value in accordance with the level difference defining the mark.
Claim 2
Dependent Claim
92 words
An exposure apparatus, comprising: a stage for carrying thereon a wafer; an exposure system for projecting a radiation energy to the wafer to print a pattern thereon; and a detection optical system having a sigma value, for projecting a radiation beam to the wafer and for receiving a reflection beam reflected from the wafer to detect a mark of the wafer which is defined by a level difference on the wafer, said detection optical system comprising an adjuster for changing the sigma value in accordance with the level difference defining the mark.
Claim 3
Dependent Claim
50 words
An apparatus according to claim 1, wherein said detection optical system forms, on a predetermined image plane, an image of the mark by using the reflection beam, and wherein said adjuster is operable to change the sigma value so as to provide higher contrast of the image of the mark.
Claim 4
Dependent Claim
20 words
An apparatus according to claim 1, wherein the radiation beam has a wavelength different from that of the radiation energy.
Claim 5
Dependent Claim
20 words
An apparatus according to claim 1, wherein the radiation beam has the same wavelength as that of the radiation energy.
Claim 6
Dependent Claim
32 words
An apparatus according to claim 1, wherein said adjuster is operable to change the numerical aperture of said detection optical system for the radiation beam projection, to thereby change the sigma value.
Claim 7
Dependent Claim
37 words
An apparatus according to claim 1, wherein said adjuster is operable to change the numerical aperture of said detection optical system for the reflection beam reception, to thereby change the sigma value of said detection optical system.
Claim 8
Dependent Claim
30 words
An apparatus according to claim 1, wherein, when the level difference (h) is in a range of 0<h≦0.05 (micron), the sigma value (σ) is set in a range of 0<σ≦0.4.
Claim 9
Dependent Claim
87 words
An exposure apparatus, comprising: a stage for carrying thereon a wafer; an exposure system for projecting radiation energy to the wafer to print a pattern thereon; and a detection optical system having a sigma value, for projecting a radiation beam to the wafer and for receiving a reflection beam reflected from the wafer to detect an image of a mark provided on the wafer, said detection optical system comprising an adjuster for changing the sigma value to provide a higher contrast of the image of the mark.
Claim 10
Dependent Claim
87 words
An exposure apparatus, comprising: a stage for carrying thereon a wafer; an exposure system for projecting radiation energy to the wafer to print a pattern thereon; and a detection optical system having a sigma value, for projecting a radiation beam to the wafer and for receiving a reflection beam reflected from the wafer to detect an image of a mark provided on the wafer, said detection optical system comprising an adjuster for changing the sigma value to provide a higher contrast of the image of the mark.
Claim 11
Dependent Claim
20 words
An apparatus according to claim 8, wherein the radiation beam has a wavelength different from that of the radiation energy.
Claim 12
Dependent Claim
20 words
An apparatus according to claim 8, wherein the radiation beam has the same wavelength as that of the radiation energy.
Claim 13
Dependent Claim
32 words
An apparatus according to claim 8, wherein said adjuster is operable to change the numerical aperture of said detection optical system for the radiation beam projection, to thereby change the sigma value.
Claim 14
Dependent Claim
37 words
An apparatus according to claim 8, wherein said adjuster is operable to change the numerical aperture of said detection optical system for the reflection beam reception, to thereby change the sigma value of said detection optical system.
Claim 15
Dependent Claim
39 words
An apparatus according to claim 8, wherein, when a level difference (h) on the wafer, defining a mark on the wafer, is in a range of 0<h≦0.05 (micron), the sigma value (σ) is set in a range of 0<σ≦0.4.
Claim 16
Dependent Claim
103 words
An exposure apparatus usable with a mask and a wafer, comprising: a stage for carrying thereon the wafer; a projection optical system for projecting an image of a circuit pattern of the mask onto the wafer; and a detection optical system having a sigma value, for projecting a radiation beam to the wafer and for receiving a reflection beam reflected from the wafer to detect an alignment mark of the wafer which is defined by a level difference on the wafer, said detection optical system comprising an adjuster for changing the sigma value in accordance with the level difference defining the alignment mark.
Claim 17
Dependent Claim
103 words
An exposure apparatus usable with a mask and a wafer, comprising: a stage for carrying thereon the wafer; a projection optical system for projecting an image of a circuit pattern of the mask onto the wafer; and a detection optical system having a sigma value, for projecting a radiation beam to the wafer and for receiving a reflection beam reflected from the wafer to detect an alignment mark of the wafer which is defined by a level difference on the wafer, said detection optical system comprising an adjuster for changing the sigma value in accordance with the level difference defining the alignment mark.
Claim 18
Dependent Claim
50 words
An apparatus according to claim 14, wherein said detection optical system forms, on a predetermined image plane, an image of the mark by using the reflection beam, and wherein said adjuster is operable to change the sigma value so as to provide higher contrast of the image of the mark.
Claim 19
Dependent Claim
30 words
An apparatus according to claim 14, wherein the radiation beam has a wavelength different from that of a beam used for the projection of the image of the circuit pattern.
Claim 20
Dependent Claim
29 words
An apparatus according to claim 14, wherein the radiation beam has substantially the same wavelength as a beam used for the projection of the image of the circuit pattern.
Claim 21
Dependent Claim
35 words
An apparatus according to claim 14, wherein said detection optical system receives the reflection beam passed through the mask to detect a mark of the mask as well as the alignment mark of the wafer.
Claim 22
Dependent Claim
32 words
An apparatus according to claim 14, wherein said adjuster is operable to change the numerical aperture of said detection optical system for the radiation beam projection, to thereby change the sigma value.
Claim 23
Dependent Claim
37 words
An apparatus according to claim 14, wherein said adjuster is operable to change the numerical aperture of said detection optical system for the reflection beam reception, to thereby change the sigma value of said detection optical system.
Claim 24
Dependent Claim
30 words
An apparatus according to claim 14, wherein, when the level difference (h) is in a range of 0<h≦0.05 (micron), the sigma value (σ) is set in a range of 0<σ≦0.4.
Claim 25
Dependent Claim
110 words
An exposure apparatus usable with a mask and a wafer, comprising: a stage for carrying thereon the wafer; a projection optical system for projecting an image of a circuit pattern of the mask onto the wafer; and a detection optical system disposed beside said projection optical system and having a sigma value, for projecting a radiation beam to the wafer and for receiving a reflection beam reflected from the wafer to detect an alignment mark of the wafer which is defined by a level difference on the wafer, said detection optical system comprising an adjuster for changing the sigma value in accordance with the level difference defining the alignment mark.
Claim 26
Dependent Claim
110 words
An exposure apparatus usable with a mask and a wafer, comprising: a stage for carrying thereon the wafer; a projection optical system for projecting an image of a circuit pattern of the mask onto the wafer; and a detection optical system disposed beside said projection optical system and having a sigma value, for projecting a radiation beam to the wafer and for receiving a reflection beam reflected from the wafer to detect an alignment mark of the wafer which is defined by a level difference on the wafer, said detection optical system comprising an adjuster for changing the sigma value in accordance with the level difference defining the alignment mark.
Claim 27
Dependent Claim
50 words
An apparatus according to claim 22, wherein said detection optical system forms, on a predetermined image plane, an image of the mark by using the reflection beam, and wherein said adjuster is operable to change the sigma value so as to provide higher contrast of the image of the mark.
Claim 28
Dependent Claim
30 words
An apparatus according to claim 22, wherein the radiation beam has a wavelength different from that of a beam used for the projection of the image of the circuit pattern.
Claim 29
Dependent Claim
32 words
An apparatus according to claim 22, wherein said adjuster is operable to change the numerical aperture of said detection optical system for the radiation beam projection, to thereby change the sigma value.
Claim 30
Dependent Claim
37 words
An apparatus according to claim 22, wherein said adjuster is operable to change the numerical aperture of said detection optical system for the reflection beam reception, to thereby change the sigma value of said detection optical system.
Claim 31
Dependent Claim
30 words
An apparatus according to claim 22, wherein, when the level difference (h) is in a range of 0<h≦0.05 (micron), the sigma value (σ) is set in a range of 0<σ≦0.4.
Claim 32
Independent Claim
133 words
A method of manufacturing semiconductor device, wherein an alignment mark of a wafer defined by a level difference is detected by projecting a radiation beam to the wafer and by receiving a reflection beam reflected from the wafer, wherein a position of the wafer is then adjusted on the basis of the detection of the alignment mark of the wafer, and wherein the wafer is then exposed with radiation energy to thereby print a circuit pattern on the wafer, said method comprising the steps of: changing at least one of a numerical aperture for the radiation beam projection and a numerical aperture for the reflection beam reception, in accordance with the level difference defining the alignment mark of the wafer; and detecting the alignment mark of the wafer with the changed numerical aperture.
Claim 33
Independent Claim
133 words
A method of manufacturing semiconductor device, wherein an alignment mark of a wafer defined by a level difference is detected by projecting a radiation beam to the wafer and by receiving a reflection beam reflected from the wafer, wherein a position of the wafer is then adjusted on the basis of the detection of the alignment mark of the wafer, and wherein the wafer is then exposed with radiation energy to thereby print a circuit pattern on the wafer, said method comprising the steps of: changing at least one of a numerical aperture for the radiation beam projection and a numerical aperture for the reflection beam reception, in accordance with the level difference defining the alignment mark of the wafer; and detecting the alignment mark of the wafer with the changed numerical aperture.
Claim 34
Dependent Claim
49 words
A method according to claim 28, further comprising detecting the alignment mark of the wafer using a detection optical system having a sigma value and wherein, when the level difference (h) is in a range of 0<h≦0.05 (micron), the sigma value (σ) is set in a range of 0<σ≦0.4.
Claim 35
Independent Claim
142 words
A method of manufacturing semiconductor devices, wherein an image of an alignment mark of a wafer defined by a level difference is detected by projecting a radiation beam to the wafer and by receiving a reflection beam reflected from the wafer, wherein a position of the wafer is then adjusted on the basis of the detection of the image of the alignment mark of the wafer, and wherein the wafer is then exposed with radiation energy to thereby print a circuit pattern on the wafer, said method comprising the steps of: changing at least one of a numerical aperture for the radiation beam projection and a numerical aperture for the reflection beam reception, so as to provide higher contrast of the image of the alignment mark of the wafer; and detecting the alignment mark of the wafer with the changed numerical aperture.
Claim 36
Independent Claim
142 words
A method of manufacturing semiconductor devices, wherein an image of an alignment mark of a wafer defined by a level difference is detected by projecting a radiation beam to the wafer and by receiving a reflection beam reflected from the wafer, wherein a position of the wafer is then adjusted on the basis of the detection of the image of the alignment mark of the wafer, and wherein the wafer is then exposed with radiation energy to thereby print a circuit pattern on the wafer, said method comprising the steps of: changing at least one of a numerical aperture for the radiation beam projection and a numerical aperture for the reflection beam reception, so as to provide higher contrast of the image of the alignment mark of the wafer; and detecting the alignment mark of the wafer with the changed numerical aperture.
Claim 37
Dependent Claim
49 words
A method according to claim 30, further comprising detecting the alignment mark of the wafer using a detection optical system having a sigma value and wherein, when the level difference (h) is in a range of 0<h≦0.05 (micron), the sigma value (σ) is set in a range of 0<σ≦0.4.
Claim 38
Independent Claim
155 words
A method of manufacturing semiconductor devices, wherein an image of an alignment mark of a wafer defined by a level difference is detected by projecting a radiation beam to the wafer and by receiving a reflection beam reflected from the wafer, wherein a position of the wafer with respect to a circuit pattern of a mask is then adjusted on the basis of the detection of the image of the alignment mark of the wafer, and wherein the wafer is then exposed to the circuit pattern of the mask with radiation energy to thereby print the circuit pattern on the wafer, said method comprising the steps of: changing at least one of a numerical aperture for the radiation beam projection and a numerical aperture for the reflection beam reception, in accordance with the level difference defining the alignment mark of the wafer; and detecting the alignment mark of the wafer with the changed numerical aperture.
Claim 39
Independent Claim
155 words
A method of manufacturing semiconductor devices, wherein an image of an alignment mark of a wafer defined by a level difference is detected by projecting a radiation beam to the wafer and by receiving a reflection beam reflected from the wafer, wherein a position of the wafer with respect to a circuit pattern of a mask is then adjusted on the basis of the detection of the image of the alignment mark of the wafer, and wherein the wafer is then exposed to the circuit pattern of the mask with radiation energy to thereby print the circuit pattern on the wafer, said method comprising the steps of: changing at least one of a numerical aperture for the radiation beam projection and a numerical aperture for the reflection beam reception, in accordance with the level difference defining the alignment mark of the wafer; and detecting the alignment mark of the wafer with the changed numerical aperture.
Claim 40
Dependent Claim
48 words
A method according to claim 32, further comprising detecting the alignment of the wafer using a detection optical system having a sigma value and wherein, when the level difference (h) is in a range of 0<h≦0.05 (micron), the sigma value (σ) is set in a range of 0<σ≦0.4.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-12-15 | 1996-06-15 | 1996-12-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-12-15 | 2000-06-15 | 2000-12-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-12-15 | 2004-06-15 | 2004-12-15 | $7700.00 | Window Closed / Lapsed |