Abstract In the chemo-mechanical polishing, in particular, of semiconductor wafers,he abrasion and the geometrical quality of the wafers decreases with increasing service life of the polishing cloth. This can be prevented by treating the polishing cloth in each case after the polishing operation in a manner such that a pressure field is impressed, essentially without mechanical stress, on the polishing cloth, which pressure field causes a treatment liquid to flow through the interior of the polishing cloth and in this process the residues produced during polishing are rendered mobile and removed. A baseplate placed transversely across the polishing cloth and having a flat working surface provided with exit openings for the treatment liquid is suitable for carrying out the process. In the treatment, the treatment liquid is forced beneath the baseplate into the moving polishing cloth so that the latter is gradually traversed by the zone through which flow takes place.
Inventors
👤 Helene Prigge
👤 Josef Lang
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-11-09 15:23
CPC Classifications
B; B24; B24B; B24B53/00; B24B53/017
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
163 words
A process for treating a polymeric polishing cloth containing residues produced during the polishing operation of semiconductor wafers, comprising the steps of: placing the polishing cloth on at least one flat polishing plate; positioning over said polishing cloth a base plate having at least one flat working surface having two longitudinally-extending long edges which transversely span the polishing cloth, and having liquid supply means comprising at least two slot openings which are parallel to said long edges, and whose length is less than the width of the polishing cloth; and introducing through said supply means a treatment liquid onto the surface of the polishing cloth; under sufficient pressure to cover the surface with an aqueous treatment liquid, to provide an adequate penetration depth of said treatment liquid into the interior of the polishing cloth and to provide uniform flow therethrough whereby said residues are dispersed or dissolved in the treatment liquid and removed from the polishing cloth at the end of the baseplate.
Claim 2
Dependent Claim
163 words
A process for treating a polymeric polishing cloth containing residues produced during the polishing operation of semiconductor wafers, comprising the steps of: placing the polishing cloth on at least one flat polishing plate; positioning over said polishing cloth a base plate having at least one flat working surface having two longitudinally-extending long edges which transversely span the polishing cloth, and having liquid supply means comprising at least two slot openings which are parallel to said long edges, and whose length is less than the width of the polishing cloth; and introducing through said supply means a treatment liquid onto the surface of the polishing cloth; under sufficient pressure to cover the surface with an aqueous treatment liquid, to provide an adequate penetration depth of said treatment liquid into the interior of the polishing cloth and to provide uniform flow therethrough whereby said residues are dispersed or dissolved in the treatment liquid and removed from the polishing cloth at the end of the baseplate.
Claim 3
Dependent Claim
16 words
The process as claimed in claim 1, wherein said treatment liquid comprises an aqueous alkaline solution.
Claim 4
Dependent Claim
14 words
The process as claimed in claim 1, wherein said treatment liquid contains an organosilanol.
Claim 5
Dependent Claim
12 words
The process as claimed in claim 3, wherein said organosilanol is trialkylsilanol.
Claim 6
Dependent Claim
18 words
The process as claimed in claim 1, wherein the flow through the polishing cloth takes place in zones.
Claim 7
Dependent Claim
22 words
The process according to claim 1, wherein said treatment liquid comprises an aqueous alkaline solution containing an alkali hydroxide or alkali carbonate.