US5164800A
Expired / Lapsed
US
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Semiconductor device
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1991-08-23
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Granted: 1992-11-17
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Expires: 2011-08-23
Abstract
Abstract This invention is a semiconductor device comprising a heterojunction of (AlAs) x (InSb) 1-x wherein a composition ratio x is 0.65 to 0.85 and InP. In addition, this invention is a semiconductor device comprising a heterojunction of (AlAs) x (GaSb) 1-x wherein a composition ratio x is 0.4 to 0.6 and InP. Furthermore, this invention is a semiconductor device comprising a heterojunction of GaAs x Sb 1-x wherein a composition ratio x is 0.4 to 0.6 and InP. Each heterojunction is formed with good crystal lattice matching properties in an interface. Since an interface level concentration in the heterojunction interface is reduced, various conventional problems caused by a high-concentration interface level can be solved. In addition, since characteristics such as a high saturated electron speed and a high thermal conductivity of InP are achieved in a semiconductor device, a high-power element having good RF characteristics can be provided.
Inventors
- 👤 Shigeru Nakajima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:52
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/4732; H10D10/00; H10D10/80; H10D10/821; H10D30/01; H10D30/015; H10D62/00; H10D62/80; H10D62/82; H10D62/824
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
22 words
A semiconductor device comprising a heterojunction of (AlAs) x (InSb) 1-x wherein a composition ratio x is 0.65 to 0.85 and InP.
Claim 2
Dependent Claim
22 words
A semiconductor device comprising a heterojunction of (AlAs) x (InSb) 1-x wherein a composition ratio x is 0.65 to 0.85 and InP.
Claim 3
Dependent Claim
16 words
A device according to claim 1, wherein said semiconductor device is a high electron mobility transistor.
Claim 4
Dependent Claim
72 words
A device according to claim 2, further comprising: an InP semiconductor substrate; a buffer layer formed on said InP semiconductor substrate; a channel layer formed on said buffer layer and consisting of InP; an electron supply layer, consisting of (AlAs) x (InSb) 1-x , for forming said heterojunction according to claim 1 with said channel layer; and a gate electrode and a pair of ohmic electrodes formed on said electron supply layer.
Claim 5
Dependent Claim
15 words
A device according to claim 1, wherein said semiconductor device is a heterojunction bipolar transistor.
Claim 6
Dependent Claim
39 words
A device according to claim 4, further comprising a collector consisting of InP, a base consisting of InP, and an emitter, consisting of (AlAs) x (InSb) 1-x , for forming said heterojunction according to claim 1 with said base.
Claim 7
Dependent Claim
22 words
A semiconductor device comprising a heterojunction of (AlAs) x (GaSb) 1-x wherein a composition ratio x is 0.4 to 0.6 and Inp.
Claim 8
Dependent Claim
22 words
A semiconductor device comprising a heterojunction of (AlAs) x (GaSb) 1-x wherein a composition ratio x is 0.4 to 0.6 and Inp.
Claim 9
Dependent Claim
16 words
A device according to claim 6, wherein said semiconductor device is a high electron mobility transistor.
Claim 10
Dependent Claim
72 words
A device according to claim 7, further comprising: an InP semiconductor substrate; a buffer layer formed on said InP semiconductor substrate; a channel layer formed on said buffer layer and consisting of InP; an electron supply layer, consisting of (AlAs) x (GaSb) 1-x , for forming said heterojunction according to claim 6 with said channel layer; and a gate electrode and a pair of ohmic electrodes formed on said electron supply layer.
Claim 11
Dependent Claim
15 words
A device according to claim 6, wherein said semiconductor device is a heterojunction bipolar transistor.
Claim 12
Dependent Claim
39 words
A device according to claim 9, further comprising a collector consisting of InP, a base consisting of InP, and an emitter, consisting of (AlAs) x (GaSb) 1-x , for forming said heterojunction according to claim 6 with said base.
Claim 13
Dependent Claim
22 words
A semiconductor device comprising a heterojunction of GaAs x Sb 1-x wherein a composition ratio x is 0.4 to 0.6 and Inp.
Claim 14
Dependent Claim
22 words
A semiconductor device comprising a heterojunction of GaAs x Sb 1-x wherein a composition ratio x is 0.4 to 0.6 and Inp.
Claim 15
Dependent Claim
16 words
A device according to claim 11, wherein said semiconductor device is a high electron mobility transistor.
Claim 16
Dependent Claim
72 words
A device according to claim 12, further comprising: an InP semiconductor substrate; a buffer layer formed on said InP semiconductor substrate; a channel layer formed on said buffer layer and consisting of InP; an electron supply layer, consisting of GaAs x Sb 1-x , for forming said heterojunction according to claim 11 with said channel layer; and a gate electrode and a pair of ohmic electrodes formed on said electron supply layer.
Claim 17
Dependent Claim
15 words
A device according to claim 11, wherein said semiconductor device is a heterojunction bipolar transistor.
Claim 18
Dependent Claim
39 words
A device according to claim 14, further comprising a collector consisting of InP, a base consisting of InP, and an emitter, consisting of GaAs x Sb 1-x , for forming said heterojunction according to claim 11 with said base.
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