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US5161059A Expired / Lapsed US ⏱️ 0.0 years remaining

High-efficiency, multilevel, diffractive optical elements

Assignee: Massachusetts Institute of Technology
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Filing: 1989-08-29
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Granted: 1992-11-03
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Expires: 2009-08-29
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Abstract

Abstract A high-efficiency, diffractive optical element having at least one surface including multilevel steps, the steps determined by calculating equiphase boundaries utilizing a disclosed equation and algorithm. The optical element can be adapted to correct for chromatic and/or spherical aberration, and can be used in UV lithographic apparatus.

Inventors

  • 👤 Gary J. Swanson
  • 👤 Wilfrid B. Veldkamp

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 18:21
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70216; G03F7/70308; G02; G02B; G02B27/00; G02B27/42; G02B27/4205; G02B27/4211; G02B27/4216; G02B27/4222; G02B3/00; G02B3/02; G02B3/08; G02B5/00; G02B5/18; G02B5/1847; G02B5/1857; G02B5/1876; G03F1/00; G03F7/0005; G03F7/001

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 83 words
High-efficiency, diffractive optical element having at least one surface including multilevel steps, the steps determined by calculating equiphase boundaries utilizing the equation ##EQU6## where x and y denote coordinates on the optical element, λ denotes wavelength, and a nm represents a series of optimized coefficients, and the algorithm ______________________________________ Equiphase Boundaries Level #N (l = 0, ±1, ±2, . . .) Phase Etch Depth θ ______________________________________ 1 φ(x, y) = (l + 1)π π ##STR14## ##STR15## 3 ##STR16## ##STR17## 4 ##STR18## ##STR19## ______________________________________
Claim 2
Dependent Claim 83 words
High-efficiency, diffractive optical element having at least one surface including multilevel steps, the steps determined by calculating equiphase boundaries utilizing the equation ##EQU6## where x and y denote coordinates on the optical element, λ denotes wavelength, and a nm represents a series of optimized coefficients, and the algorithm ______________________________________ Equiphase Boundaries Level #N (l = 0, ±1, ±2, . . .) Phase Etch Depth θ ______________________________________ 1 φ(x, y) = (l + 1)π π ##STR14## ##STR15## 3 ##STR16## ##STR17## 4 ##STR18## ##STR19## ______________________________________
Claim 3
Dependent Claim 19 words
The high-efficiency, diffractive optical element of claim 1, wherein the multilevel steps are adapted to correct for chromatic aberration.
Claim 4
Dependent Claim 19 words
The high-efficiency, diffractive optical element of claim 1 wherein the multilevel steps are adapted to correct for spherical aberration.
Claim 5
Dependent Claim 28 words
In UV lithographic apparatus, an optical system including at least one optical element, one surface of said optical element including a multilevel step pattern adapted for aberration correction.
Claim 6
Dependent Claim 28 words
In UV lithographic apparatus, an optical system including at least one optical element, one surface of said optical element including a multilevel step pattern adapted for aberration correction.
Claim 7
Dependent Claim 43 words
UV lithographic exposure system comprising: a source of UV radiation; and an optics column for generating an optical beam or image, the optics column including at least one optical element, one surface of which includes a multilevel step pattern adapted for aberration correction.
Claim 8
Dependent Claim 43 words
UV lithographic exposure system comprising: a source of UV radiation; and an optics column for generating an optical beam or image, the optics column including at least one optical element, one surface of which includes a multilevel step pattern adapted for aberration correction.
Claim 9
Dependent Claim 21 words
The lithographic exposure system of claim 5 wherein the at least one optical element corrects both for spherical and chromatic aberration.
Claim 10
Dependent Claim 85 words
The lithographic exposure system of claim 5 wherein the steps of the multilevel step pattern are determined by calculating equiphase boundaries utilizing the equation ##EQU7## where x and y denote coordinates on each optical element, λ denotes wavelengths, and a nm represents a series of optimized coefficients, and the algorithm ______________________________________ Equiphase Boundaries Level #N (l = 0, ±1, ±2, . . .) Phase Etch Depth θ ______________________________________ 1 φ(x, y) = (l + 1)π π ##STR20## ##STR21## 3 ##STR22## ##STR23## 4 ##STR24## ##STR25## ______________________________________
Claim 11
Dependent Claim 26 words
The lithographic exposure system of claim 5 wherein the source of UV radiation has a wavelength in the range of substantially 190 nm to 300 nm.
Claim 12
Dependent Claim 17 words
The lithographic exposure system of claim 5 wherein the source of UV radiation is an eximer laser.
Claim 13
Dependent Claim 16 words
The lithographic exposure system of claim 5 wherein the UV radiation source is a mercury lamp.

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3.5 Years (Year 4) 1995-11-03 1996-05-04 1996-11-03 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1999-11-03 2000-05-04 2000-11-03 $3760.00 Window Closed / Lapsed
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