US5157356A
Expired / Lapsed
US
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Monolithic microwave integrated circuit voltage controlled harmonic oscillator with isolation amplifiers
Assignee: Raytheon Co
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Filing: 1991-05-03
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Granted: 1992-10-20
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Expires: 2011-05-03
Abstract
Abstract A microwave voltage controlled oscillator (12) and isolation amplifiers (14, 16) are formed as a monolithic circuit on a single GaAs substrate. Only a single external inductor (34) is required to set the oscillation frequency. Optionally, an external resonator (38) may be used instead of an inductor. Off-chip active bias control (LIMin, 18) is provided for convenient frequency tuning.
Inventors
- 👤 Scott W. Wedge
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 19:13
CPC Classifications
H; H03; H03B; H03B5/00; H03B5/08; H03B5/12; H03B5/1228; H03B5/1203; H03B5/1237; H03B5/124; H03B5/1243; H03B2200/00; H03B2200/0002; H03B2200/0008; H03B2200/0014; H03B2200/0028; H03B2200/003; H03B2200/0034
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
118 words
Monolithic microwave circuit apparatus comprising: a voltage controlled oscillator including a first field effect transistor having a source, a drain and a gate, the drain of said first transistor being positively biased with respect to the source of said first transistor, a second field effect transistor having a source, a drain and a gate, the drain of the second transistor being connected to the source of the first transistor, the source of said second transistor being negatively biased with respect to the drain of said second transistor, a capacitive voltage divider interconnecting the source and gate of the first transistor forming positive feedback for the first transistor; and first and second buffer amplifiers interconnected on-chip with the oscillator.
Claim 2
Dependent Claim
118 words
Monolithic microwave circuit apparatus comprising: a voltage controlled oscillator including a first field effect transistor having a source, a drain and a gate, the drain of said first transistor being positively biased with respect to the source of said first transistor, a second field effect transistor having a source, a drain and a gate, the drain of the second transistor being connected to the source of the first transistor, the source of said second transistor being negatively biased with respect to the drain of said second transistor, a capacitive voltage divider interconnecting the source and gate of the first transistor forming positive feedback for the first transistor; and first and second buffer amplifiers interconnected on-chip with the oscillator.
Claim 3
Dependent Claim
27 words
Monolithic microwave circuit apparatus as in claim 1, in which the second buffer amplifier is for driving loads requiring D.C. level shifts near a predetermined voltage level.
Claim 4
Dependent Claim
25 words
Monolithic microwave circuit apparatus as in claim 1, in which the oscillator, first buffer amplifier and second buffer amplifier are on a single GaAs substrate.
Claim 5
Dependent Claim
25 words
Monolithic microwave circuit apparatus as in claim 1, in which an external inductive element interconnects with the voltage controlled oscillator to establish the oscillator frequency.
Claim 6
Dependent Claim
17 words
Monolithic microwave circuit apparatus as in claim 4, in which the inductive element is a bond wire.
Claim 7
Dependent Claim
23 words
Monolithic microwave circuit apparatus as in claim 1, in which an external resonator interconnects with the voltage controlled oscillator to establish oscillator frequency.
Claim 8
Dependent Claim
16 words
Monolithic microwave circuit apparatus as in claim 6, in which the resonator is a dielectric resonator.
Claim 9
Dependent Claim
27 words
Monolithic microwave circuit apparatus as in claim 6, in which the resonator is a surface acoustic wave device for establishing oscillator operation in the VHF/UHF frequency range.
Claim 10
Dependent Claim
27 words
Monolithic microwave circuit apparatus as in claim 1, in which the oscillator has a terminal via which an off-chip signal effects bias control for oscillator frequency tuning.
Claim 11
Dependent Claim
37 words
Monolithic microwave circuit apparatus as in claim 1, in which first and second Schottky diodes each interconnect the first field effect transistor gate and circuit ground, said diodes being arranged in opposite conduction connection to each other.
Claim 12
Dependent Claim
48 words
Monolithic microwave circuit apparatus as in claim 1, in which a third field effect transistor has its drain and source serially connected between the first field effect transistor and ground, a bias terminal connected to the third transistor gate; said oscillator being disabled and transparent at zero bias.
Claim 13
Dependent Claim
22 words
Monolithic microwave circuit apparatus as recited in claim 1 further including an external inductor connected to the gate of the first transistor.
Claim 14
Dependent Claim
22 words
Monolithic microwave circuit apparatus as recited in claim 1 further including an external resonator connected to the gate of the first transistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-10-20 | 1996-04-20 | 1996-10-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-10-20 | 2000-04-20 | 2000-10-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-10-20 | 2004-04-20 | 2004-10-20 | $7700.00 | Window Closed / Lapsed |