US5157281A
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Level-shifter circuit for integrated circuits
Assignee: Texas Instruments Inc
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Filing: 1991-07-12
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Granted: 1992-10-20
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Expires: 2011-07-12
Abstract
Abstract A level-shifter circuit includes a deep N-tank to insulate the N-channel portions of transistors from the substrate. The circuit is formed on a P-type substrate coupled to reference voltage Vss. A first field-effect transistor has first and second N+ doped regions formed in a third isolating P- doped region. The third doped region is formed in a fourth isolating N- doped region, which is formed in the substrate. A second transistor has first and second N+ doped regions formed in the same isolation regions as those of the first transistor. A third field-effect transistor has first and second P+ doped regions formed in an isolating N- region that is formed in the substrate. A fourth field-effect transistor has first and second N+ doped regions formed in the same isolation N- region as that of the third transistor. The gate of the first transistor is coupled to a first input. The first doped region of the first transistor is coupled to the output and the second doped region of the first transistor is coupled to the negative voltage Vn. The third doped region is coupled to the negative voltage Vn and the fourth doped region is coupled to the supply voltage Vdd. The second transistor is connected in feedback configuration to the first transistor. The gate of the third transistor is coupled to the second input. The first doped region of the third transistor is coupled to the output and the second doped region of the third transistor is coupled to the voltage Vp, which is more positive than the supply voltage Vdd. The fifth doped region of the third transistor is also coupled to the voltage Vp. The fourth transistor is connected in feedback configuration to the third transistor.
Inventors
- 👤 Giovanni Santin
- 👤 Sebastiano D'Arrigo
- 👤 Michael C. Smayling
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 22:58
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/859; H10B; H10B41/00
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
173 words
A level-shifter circuit having a supply voltage, a reference voltage, a negative voltage, a first input and an output, said circuit formed on a substrate of first-conductivity-type coupled to said reference voltage, said circuit comprising: a first field-effect transistor having first and second doped regions of a second conductivity-type, said first and second doped regions of said first transistor in a third doped region of said first conductivity-type, said third doped region of said first transistor in a fourth doped region of said second conductivity-type, said fourth doped region of said first transistor in said substrate; said first transistor having a channel region between said first and second doped regions, having a gate insulated from said channel region, said gate of said first transistor coupled to said first input, said first doped region of said first transistor coupled to said output, said second doped region of said first transistor coupled to said negative voltage, said third doped region coupled to said negative voltage, and said fourth doped region coupled to said supply voltage.
Claim 2
Dependent Claim
173 words
A level-shifter circuit having a supply voltage, a reference voltage, a negative voltage, a first input and an output, said circuit formed on a substrate of first-conductivity-type coupled to said reference voltage, said circuit comprising: a first field-effect transistor having first and second doped regions of a second conductivity-type, said first and second doped regions of said first transistor in a third doped region of said first conductivity-type, said third doped region of said first transistor in a fourth doped region of said second conductivity-type, said fourth doped region of said first transistor in said substrate; said first transistor having a channel region between said first and second doped regions, having a gate insulated from said channel region, said gate of said first transistor coupled to said first input, said first doped region of said first transistor coupled to said output, said second doped region of said first transistor coupled to said negative voltage, said third doped region coupled to said negative voltage, and said fourth doped region coupled to said supply voltage.
Claim 3
Dependent Claim
119 words
The level-shifter circuit of claim 1, including: a second field-effect transistor having first and second doped regions of said second conductivity-type, said first and second doped regions of said second transistor in said third doped region of said first conductivity-type, said third doped region of said second transistor in said fourth doped region of said second conductivity-type; said second transistor having a channel region between said first and second doped regions, having a gate insulated from said channel region of said second transistor, said gate of said second transistor coupled to said output, said first doped region of said second transistor coupled to said first input, said second doped region of said second transistor coupled to said negative voltage.
Claim 4
Dependent Claim
148 words
The level-shifter circuit of claim 1, including: a second input and a voltage more positive than said supply voltage; a second field-effect transistor having first and second doped regions of said first conductivity-type, said first and second doped regions of said second transistor in a fifth doped region of said second conductivity-type, said fifth doped region of said second transistor in said substrate; said second transistor having a channel region between said first and second doped regions, having a gate insulated from said channel region of said second transistor, said gate of said second transistor coupled to said second input, said first doped region of said second transistor coupled to said output, said second doped region of said second transistor coupled to said voltage more positive than said supply voltage, said fifth doped region of said second transistor coupled to said voltage more positive than said supply voltage.
Claim 5
Dependent Claim
148 words
The level-shifter circuit of claim 1, including: a second input and a voltage more positive than said supply voltage; a second field-effect transistor having first and second doped regions of said first conductivity-type, said first and second doped regions of said second transistor in a fifth doped region of said second conductivity-type, said fifth doped region of said second transistor in said substrate; said second transistor having a channel region between said first and second doped regions, having a gate insulated from said channel region of said second transistor, said gate of said second transistor coupled to said output, said first doped region of said second transistor coupled to said second input, said second doped region of said second transistor coupled to said voltage more positive than said supply voltage, said fifth doped region of said second transistor coupled to said voltage more positive than said supply voltage.
Claim 6
Dependent Claim
12 words
The level-shifter circuit of claim 1, wherein said first conductivity-type is P-type.
Claim 7
Dependent Claim
57 words
The level-shifter circuit of claim 1, including a second field-effect transistor of a first conductivity-type having a gate and a source-drain path, wherein said gate of said second transistor is coupled to said reference voltage and said source-drain path of said second transistor is coupled between said first input and said gate of said first field-effect transistor.
Claim 8
Dependent Claim
22 words
The level-shifter circuit of claim 1, wherein one of said supply voltage and said reference voltage is coupled to said first input.
Claim 9
Dependent Claim
527 words
A level-shifter circuit having a supply voltage, a reference voltage, a negative voltage, a voltage more positive than said supply voltage, a first input, a second input and an output, said circuit formed on a substrate of first-conductivity-type coupled to said reference voltage, said circuit comprising: a first field-effect transistor having first and second doped regions of a second conductivity-type, said first and second doped regions of said first transistor in a third doped region of said first conductivity-type, said third doped region of said first transistor in a fourth doped region of said second conductivity-type, said fourth doped region of said first transistor in said substrate; a second field-effect transistor having first and second doped regions of said second conductivity-type, said first and second doped regions of said second transistor in said third doped region of said first conductivity-type, said third doped region of said second transistor in said fourth doped region of said second conductivity-type; a third field-effect transistor having first and second doped regions of said first conductivity-type, said first and second doped regions of said third transistor in a fifth doped region of said second conductivity-type, said fifth doped region of said third transistor in said substrate; and a fourth field-effect transistor having first and second doped regions of said first conductivity-type, said first and second doped regions of said fourth transistor in said fifth doped region of said second conductivity-type; said first transistor having a channel region between said first and second doped regions, having a gate insulated from said channel region, said gate of said first transistor coupled to said first input, said first doped region of said first transistor coupled to said output, said second doped region of said first transistor coupled to said negative voltage, said third doped region coupled to said negative voltage, and said fourth doped region coupled to said supply voltage; said second transistor having a channel region between said first and second doped regions, having a gate insulated from said channel region of said second transistor, said gate of said second transistor coupled to said output, said first doped region of said second transistor coupled to said first input, said second doped region of said second transistor coupled to said negative voltage; said third transistor having a channel region between said first and second doped regions, having a gate insulated from said channel region of said third transistor, said gate of said third transistor coupled to said second input, said first doped region of said third transistor coupled to said output, said second doped region of said third transistor coupled to said voltage more positive than said supply voltage, said fifth doped region of said third transistor coupled to said voltage more positive than said supply voltage; and said fourth transistor having a channel region between said first and second doped regions, having a gate insulated from said channel region of said fourth transistor, said gate of said fourth transistor coupled to said output, said first doped region of said fourth transistor coupled to said second input, said second doped region of said fourth transistor coupled to said voltage more positive than said supply voltage.
Claim 10
Dependent Claim
527 words
A level-shifter circuit having a supply voltage, a reference voltage, a negative voltage, a voltage more positive than said supply voltage, a first input, a second input and an output, said circuit formed on a substrate of first-conductivity-type coupled to said reference voltage, said circuit comprising: a first field-effect transistor having first and second doped regions of a second conductivity-type, said first and second doped regions of said first transistor in a third doped region of said first conductivity-type, said third doped region of said first transistor in a fourth doped region of said second conductivity-type, said fourth doped region of said first transistor in said substrate; a second field-effect transistor having first and second doped regions of said second conductivity-type, said first and second doped regions of said second transistor in said third doped region of said first conductivity-type, said third doped region of said second transistor in said fourth doped region of said second conductivity-type; a third field-effect transistor having first and second doped regions of said first conductivity-type, said first and second doped regions of said third transistor in a fifth doped region of said second conductivity-type, said fifth doped region of said third transistor in said substrate; and a fourth field-effect transistor having first and second doped regions of said first conductivity-type, said first and second doped regions of said fourth transistor in said fifth doped region of said second conductivity-type; said first transistor having a channel region between said first and second doped regions, having a gate insulated from said channel region, said gate of said first transistor coupled to said first input, said first doped region of said first transistor coupled to said output, said second doped region of said first transistor coupled to said negative voltage, said third doped region coupled to said negative voltage, and said fourth doped region coupled to said supply voltage; said second transistor having a channel region between said first and second doped regions, having a gate insulated from said channel region of said second transistor, said gate of said second transistor coupled to said output, said first doped region of said second transistor coupled to said first input, said second doped region of said second transistor coupled to said negative voltage; said third transistor having a channel region between said first and second doped regions, having a gate insulated from said channel region of said third transistor, said gate of said third transistor coupled to said second input, said first doped region of said third transistor coupled to said output, said second doped region of said third transistor coupled to said voltage more positive than said supply voltage, said fifth doped region of said third transistor coupled to said voltage more positive than said supply voltage; and said fourth transistor having a channel region between said first and second doped regions, having a gate insulated from said channel region of said fourth transistor, said gate of said fourth transistor coupled to said output, said first doped region of said fourth transistor coupled to said second input, said second doped region of said fourth transistor coupled to said voltage more positive than said supply voltage.
Claim 11
Dependent Claim
14 words
The circuit of claim 8, wherein said first and second inputs are coupled together.
Claim 12
Dependent Claim
27 words
The circuit of claim 8, wherein said negative voltage changes from said reference voltage to said negative voltage after a signal is applied to said first terminal.
Claim 13
Dependent Claim
33 words
The circuit of claim 8, wherein said voltage more positive than said supply voltage changes from said supply voltage to said more positive voltage after a signal is applied to said second terminal.
Claim 14
Dependent Claim
286 words
A switching circuit having a supply voltage, a reference voltage, a negative voltage, an input and an output, said circuit formed on a substrate of first-conductivity-type coupled to said reference voltage, said circuit comprising: a first field-effect transistor having first and second doped regions of a second conductivity-type, said first and second doped regions of said first transistor in a third doped region of said first conductivity-type, said third doped region of said first transistor in a fourth doped region of said second conductivity-type, said fourth doped region of said first transistor in said substrate; and a second field-effect transistor having first and second doped regions of said second conductivity-type, said first and second doped regions of said second transistor in a said third doped region of said first conductivity-type, said third doped region of said second transistor in a said fourth doped region of said second conductivity-type; said first transistor having a channel region between said first and second doped regions, having a gate insulated from said channel region, said gate of said first transistor coupled to said input, said first doped region of said first transistor coupled to said output, said second doped region of said first transistor coupled to said negative voltage, said third doped region coupled to said negative voltage, and said fourth doped region coupled to said supply voltage; and said second transistor having a channel region between said first and second doped regions, having a gate insulated from said channel region of said second transistor, said gate of said second transistor coupled to said output, said first doped region of said second transistor coupled to said input, said second doped region of said second transistor coupled to said negative voltage.
Claim 15
Dependent Claim
286 words
A switching circuit having a supply voltage, a reference voltage, a negative voltage, an input and an output, said circuit formed on a substrate of first-conductivity-type coupled to said reference voltage, said circuit comprising: a first field-effect transistor having first and second doped regions of a second conductivity-type, said first and second doped regions of said first transistor in a third doped region of said first conductivity-type, said third doped region of said first transistor in a fourth doped region of said second conductivity-type, said fourth doped region of said first transistor in said substrate; and a second field-effect transistor having first and second doped regions of said second conductivity-type, said first and second doped regions of said second transistor in a said third doped region of said first conductivity-type, said third doped region of said second transistor in a said fourth doped region of said second conductivity-type; said first transistor having a channel region between said first and second doped regions, having a gate insulated from said channel region, said gate of said first transistor coupled to said input, said first doped region of said first transistor coupled to said output, said second doped region of said first transistor coupled to said negative voltage, said third doped region coupled to said negative voltage, and said fourth doped region coupled to said supply voltage; and said second transistor having a channel region between said first and second doped regions, having a gate insulated from said channel region of said second transistor, said gate of said second transistor coupled to said output, said first doped region of said second transistor coupled to said input, said second doped region of said second transistor coupled to said negative voltage.
Claim 16
Dependent Claim
12 words
The switching circuit of claim 12, wherein said first conductivity-type is P-type
Claim 17
Dependent Claim
56 words
The switching circuit of claim 12, including a third field-effect transistor of a first conductivity-type having a gate and a source-drain path, wherein said gate of said third transistor is coupled to said reference voltage and said source-drain path of said third transistor is coupled between said input and said gate of said first field-effect transistor.
Claim 18
Dependent Claim
22 words
The switching circuit of claim 12, wherein one of said supply voltage and said reference voltage is coupled to said first input.
References Cited (Backward Citations)
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