US5155736A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser element capable of changing emission wavelength, and method of driving the same
Assignee: International Business Machines Corp
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Filing: 1991-11-14
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Granted: 1992-10-13
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Expires: 2011-11-14
Abstract
Abstract A semiconductor laser element capable of changing an oscillation wavelength over a wide range without increasing a threshold current is disclosed. A wavelength selective filter capable of changing a selected wavelength over a wide range is also disclosed. The semiconductor laser element has a substrate and a laser resonator formed on the substrate by stacking semiconductor layers including an active layer and an optical waveguide layer of a superlattice structure. The resonator includes a first reflection portion, an active portion, a phase adjustment portion and second reflection portion which are juxtaposed in a resonance direction. Diffraction gratings are formed in the optical guide layer of the first and second reflection portions. Electrodes are independently formed in the active portion, the phase adjustment portion and the first and second reflection portions. Further, a method for driving the semiconductor laser is disclosed.
Inventors
- 👤 Takeo Ono
- 👤 Hajime Sakata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 03:41
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; B; B82; B82Y; B82Y20/00; H01S5/06; H01S5/062; H01S5/0625; H01S5/06255; H01S5/06256; H01S5/06258; H01S5/50; H01S5/5045
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
102 words
A semiconductor laser element which can change an emission wavelength, comprising: a substrate; a laser resonator formed on said substrate, said resonator being formed by stacking semiconductor layers including an active layer and an optical waveguide layer of a superlattice structure, and said resonator including a first reflection portion, an active portion, a phase adjustment portion, and a second reflection portion which are juxtaposed in a resonance direction; diffraction gratings formed in said optical guide layer of said first and second reflection portions; and electrodes independently formed in said active portion, said phase adjustment portion, and said first and second reflection portions.
Claim 2
Dependent Claim
102 words
A semiconductor laser element which can change an emission wavelength, comprising: a substrate; a laser resonator formed on said substrate, said resonator being formed by stacking semiconductor layers including an active layer and an optical waveguide layer of a superlattice structure, and said resonator including a first reflection portion, an active portion, a phase adjustment portion, and a second reflection portion which are juxtaposed in a resonance direction; diffraction gratings formed in said optical guide layer of said first and second reflection portions; and electrodes independently formed in said active portion, said phase adjustment portion, and said first and second reflection portions.
Claim 3
Dependent Claim
28 words
An element according to claim 1, wherein an end portion of an absorption spectrum of said optical waveguide layer is present near an oscillation wavelength of said element.
Claim 4
Dependent Claim
26 words
An element according to claim 1, wherein said laser resonator includes n- and p-type cladding layers sandwiching said active layer and said optical waveguide layer therebetween.
Claim 5
Dependent Claim
27 words
An element according to claim 3, wherein an etching-stop layer is formed between said optical waveguide layer, and the cladding layer formed on said optical waveguide layer.
Claim 6
Dependent Claim
20 words
An element according to claim 1, wherein grooves for attaining electrical isolation are formed at boundaries of the respective portions.
Claim 7
Dependent Claim
50 words
An element according to claim 5, wherein the groove formed between said phase adjustment portion and said active portion, and the groove formed between said phase adjustment portion and said reflection portion have a larger depth than that of the groove formed between said reflection portion and said active portion.
Claim 8
Dependent Claim
51 words
An element according to claim 5, wherein regions having a high electrical resistance are formed in portions of said optical waveguide layer at positions corresponding to the groove formed between said phase adjustment portion and said active portion, and the groove formed between said phase adjustment portion and said reflection portion.
Claim 9
Dependent Claim
38 words
An element according to claim 5, wherein the groove formed between said phase adjustment portion and said active portion, and the groove formed between said phase adjustment portion and said reflection portion are buried with a non-doped semiconductor.
Claim 10
Dependent Claim
26 words
An element according to claim 1, wherein each of the semiconductor layers is formed of one compound selected from the group consisting of AlGaAs and GaAs.
Claim 11
Independent Claim
202 words
A method of driving a semiconductor laser element which can change an emission wavelength, said semiconductor laser comprising: a substrate; a laser resonator formed on said substrate, said resonator being formed by stacking semiconductor layers including an active layer and an optical waveguide layer of a superlattice structure, and said resonator including a first reflection portion, an active portion, a phase adjustment portion, and a second reflection portion which are juxtaposed in a resonance direction; diffraction gratings formed in said optical guide layer of said first and second reflection portions; and electrodes independently formed in said active portion, said phase adjustment portion, and said first and second reflection portions, comprising the steps of: injecting a current from the electrode of said active portion to said active layer to cause laser oscillation; injecting a current from the electrodes of said first and second reflection portions to change a refractive index of said optical waveguide layer, thereby changing a wavelength of light undergoing laser oscillation; and applying a reverse bias voltage to the electrode of said phase adjustment portion to change a refractive index of said optical waveguide layer by a quantum confinement Stark effect, thereby adjusting a phase of light undergoing laser oscillation.
Claim 12
Independent Claim
202 words
A method of driving a semiconductor laser element which can change an emission wavelength, said semiconductor laser comprising: a substrate; a laser resonator formed on said substrate, said resonator being formed by stacking semiconductor layers including an active layer and an optical waveguide layer of a superlattice structure, and said resonator including a first reflection portion, an active portion, a phase adjustment portion, and a second reflection portion which are juxtaposed in a resonance direction; diffraction gratings formed in said optical guide layer of said first and second reflection portions; and electrodes independently formed in said active portion, said phase adjustment portion, and said first and second reflection portions, comprising the steps of: injecting a current from the electrode of said active portion to said active layer to cause laser oscillation; injecting a current from the electrodes of said first and second reflection portions to change a refractive index of said optical waveguide layer, thereby changing a wavelength of light undergoing laser oscillation; and applying a reverse bias voltage to the electrode of said phase adjustment portion to change a refractive index of said optical waveguide layer by a quantum confinement Stark effect, thereby adjusting a phase of light undergoing laser oscillation.
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| 7.5 Years (Year 8) | 1999-10-13 | 2000-04-13 | 2000-10-13 | $3760.00 | Window Closed / Lapsed |
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