Method of fabricating semiconductor lasers

Claim 2

In a method for manufacturing semiconductor lasers which comprises: a. a first growth process, wherein a lower portion cladding layer, an active layer, a first upper portion carrier containing cladding layer, a light absorption layer and an evaporation preventing layer are laminated on the surface of a semiconductor substrate introduced into the growth chamber of an apparatus, b. an etching process, wherein the laminated semiconductor substrate is taken out of the growth chamber, and a strip groove deep enough to reach down to the light absorption layer is formed, c. a reevaporation process, wherein the semiconductor substrate with the stripe groove being formed is introduced into the growth chamber of the apparatus to heat the semiconductor substrate so as to selectively evaporate the light absorption layer, and d. a second growth process, wherein a second upper portion cladding layer and a cap layer are laminated on the semiconductor substrate after the light absorption layer is evaporated, the improvement wherein in the first growth process, the first upper portion cladding layer is constructed with a two-layer construction of which the upper portion is higher in carrier concentration than the lower portion, said upper portion and lower portion being of the same conductivity type.

Claim 3

In a method for manufacturing semiconductor lasers which comprises: a. a first growth process, wherein a lower portion cladding layer, an active layer, a first upper portion carrier containing cladding layer, a light absorption layer and an evaporation preventing layer are laminated on the surface of a semiconductor substrate introduced into the growth chamber of an apparatus, b. an etching process, wherein the laminated semiconductor substrate is taken out of the growth chamber, and a stripe groove deep enough to reach down to the light absorption layer is formed, c. a reevaporation process, wherein the semiconductor substrate with the stripe groove being formed is introduced into the growth chamber of the apparatus to heat the semiconductor substrate so as to selectively evaporate the light absorption layer, and d. a second growth process, wherein a second upper portion carrier containing cladding layer and a cap layer are laminated on the semiconductor substrate after the light absorption layer is evaporated, the improvement wherein: in the second growth process the carrier concentration of the second upper portion cladding layer is made higher than the carrier concentration of the first upper portion cladding layer, and the semiconductor substrate is heated for a given time in the growth chamber within the apparatus before the cap layer growth, said first and second upper portion cladding layers being of the same conductivity type.

Claim 4

In a method for manufacturing semiconductor lasers which comprises: a. a first growth process, wherein a lower portion cladding layer, an active layer, a first upper portion carrier containing cladding layer, a light absorption layer and an evaporation preventing layer are laminated on the surface of a semiconductor substrate introduced into the growth chamber of an apparatus, b. an etching process, wherein the laminated semiconductor substrate is taken out of the growth chamber, and a stripe groove deep enough to reach down to the light absorption layer is formed, c. a reevaporation process, wherein the semiconductor substrate with the stripe groove being formed is introduced into the growth chamber of the apparatus to heat the semiconductor substrate so as to selectively evaporate the light absorption layer, and d. a second growth process, wherein a second upper portion carrier containing cladding layer and a cap layer are laminated on the semiconductor substrate after the light absorption layer is evaporated, the improvement wherein: in the second growth process the carrier concentration of the second upper portion cladding layer is made higher than the carrier concentration of the first upper portion cladding layer, and the semiconductor substrate is heated for a given time in the growth chamber within the apparatus before the cap layer growth, said first and second upper portion cladding layers being of the same conductivity type.