US5148397A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory with externally controlled dummy comparator
Assignee: Lapis Semiconductor Co Ltd
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Filing: 1991-03-04
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Granted: 1992-09-15
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Expires: 2011-03-04
Abstract
Abstract A semiconductor memory which is capable of measuring a threshold voltage in a memory cell. The semiconductor memory comprises memory arrays having a plurality of memory cells arranged in a matrix, means for selecting the memory cell, and a sense amplifier for comparing a current flowing through the selected memory cell with a current flowing through a dummy cell and provides an output indicative of a resultant comparison value. The memory cells each include a first switching means having a first transconductance at the time "1" is written in the memory cell and having a second transconductance at the time "0" is written in the memory cell, the value of the second transconductance being greater than the value of the first transconductance. The dummy memory cell includes a second switching means having a third transconductance value of which is in the middle between values of the first and the second transconductance. The memory cells and the dummy cell each have a gate coupled to respective external terminals. A selected one of the terminals receives increasing voltage.
Inventors
- 👤 Hitoshi Kokubun
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 17:45
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/26; G11C16/28
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
172 words
A method for evaluating a memory cell of a semiconductor memory device, the method comprising the steps of: preparing the semiconductor memory device employing the memory cell and a dummy cell, said memory device having an input terminal coupled to the dummy cell, said memory and dummy cells each having a respective gate electrode, the gate electrode of said dummy cell being coupled to said input terminal; writing a logic ZERO into the memory cell; applying a first voltage to the gate electrode of the memory cell so that the memory cell develops a first current therein; externally applying a second voltage to the gate electrode of the dummy cell through said input terminal so that the dummy cell develops a second current therein; and externally increasing the value of the second voltage until the second current just exceeds the first current at a first time, whereby the value of the second voltage at the first time can be obtained as a characteristic value of the memory cell of the semiconductor memory.
Claim 2
Independent Claim
172 words
A method for evaluating a memory cell of a semiconductor memory device, the method comprising the steps of: preparing the semiconductor memory device employing the memory cell and a dummy cell, said memory device having an input terminal coupled to the dummy cell, said memory and dummy cells each having a respective gate electrode, the gate electrode of said dummy cell being coupled to said input terminal; writing a logic ZERO into the memory cell; applying a first voltage to the gate electrode of the memory cell so that the memory cell develops a first current therein; externally applying a second voltage to the gate electrode of the dummy cell through said input terminal so that the dummy cell develops a second current therein; and externally increasing the value of the second voltage until the second current just exceeds the first current at a first time, whereby the value of the second voltage at the first time can be obtained as a characteristic value of the memory cell of the semiconductor memory.
Claim 3
Dependent Claim
13 words
A method according to claim 1 wherein said increasing step is gradually executed.
Claim 4
Dependent Claim
23 words
A method according to claim 1 wherein said increasing step includes a step of detecting that the second current exceeds the first current.
Claim 5
Dependent Claim
16 words
A method according to claim 3 wherein said detecting step is executed by a sense amplifier.
Claim 6
Dependent Claim
19 words
A method according to claim 1 wherein said increasing step is executed while the first voltage is constantly maintained.
Claim 7
Dependent Claim
115 words
A method according to claim 1, further comprising the steps of: writing a logic ONE into the memory cell; applying a third voltage to the gate electrode of the memory cell so that the memory cell develops a third current therein; externally applying a fourth voltage to the gate electrode of the dummy cell through said input terminal so that the dummy cell develops a fourth current therein; and externally increasing the value of the third voltage until the third current just exceeds the fourth current at a second time, whereby the value of third voltage at the second time can be obtained as another characteristic value of the memory cell of the semiconductor memory.
Claim 8
Independent Claim
276 words
A method for evaluating a memory cell of a semiconductor memory device, the method comprising the steps of: preparing the semiconductor memory device employing the memory cell and a dummy cell, the memory device having an input terminal coupled to the dummy cell, said memory and dummy cells each having a respective gate electrode, the gate electrode of said dummy cell being coupled to said input terminal; writing a logic ZERO into the memory cell; applying a first voltage to the gate electrode of the memory cell so that the memory cell develops a first current therein; externally applying a second voltage to the gate electrode of the dummy cell through said input terminal so tat the dummy cell develops a second current therein; externally increasing the value of the second voltage until the second current just exceeds the first current at a first time, whereby the value of the second voltage at the first time can be obtained as a characteristic value of the memory cell of the semiconductor memory; writing a logic ONE into the memory cell; applying a third voltage to the gate electrode of the memory cell so that the memory cell develops a third current therein; externally applying a fourth voltage to the gate electrode of the dummy cell through said input terminal so that the dummy cell develops a fourth current therein; and externally increasing the value of the third voltage until the third current just exceeds the fourth current at a second time, whereby the value of the third voltage at the second time can be obtained as a characteristic value of the memory cell of the semiconductor memory;
Claim 9
Independent Claim
276 words
A method for evaluating a memory cell of a semiconductor memory device, the method comprising the steps of: preparing the semiconductor memory device employing the memory cell and a dummy cell, the memory device having an input terminal coupled to the dummy cell, said memory and dummy cells each having a respective gate electrode, the gate electrode of said dummy cell being coupled to said input terminal; writing a logic ZERO into the memory cell; applying a first voltage to the gate electrode of the memory cell so that the memory cell develops a first current therein; externally applying a second voltage to the gate electrode of the dummy cell through said input terminal so tat the dummy cell develops a second current therein; externally increasing the value of the second voltage until the second current just exceeds the first current at a first time, whereby the value of the second voltage at the first time can be obtained as a characteristic value of the memory cell of the semiconductor memory; writing a logic ONE into the memory cell; applying a third voltage to the gate electrode of the memory cell so that the memory cell develops a third current therein; externally applying a fourth voltage to the gate electrode of the dummy cell through said input terminal so that the dummy cell develops a fourth current therein; and externally increasing the value of the third voltage until the third current just exceeds the fourth current at a second time, whereby the value of the third voltage at the second time can be obtained as a characteristic value of the memory cell of the semiconductor memory;
Claim 10
Dependent Claim
13 words
A method according to claim 7 wherein said increasing step is gradually executed.
Claim 11
Dependent Claim
23 words
A method according to claim 7 wherein said increasing step includes a step of detecting that the second current exceeds the first current.
Claim 12
Dependent Claim
16 words
A method according to claim 9 wherein said detecting step is executed by a sense amplifier.
Claim 13
Dependent Claim
19 words
A method according to claim 7 wherein said increasing step is executed while the first voltage is constantly maintained.
Claim 14
Independent Claim
174 words
A method for evaluating a memory cell of a semiconductor memory device, the method comprising the steps of: preparing the semiconductor memory device employing the memory cell and a dummy cell, the memory device having an input terminal coupled to the dummy cell, said memory and dummy cells each having a respective gate electrode, the gate electrode of said dummy cell being coupled to said input terminal; writing a logic ZERO into the memory cell; applying a first voltage to the gate electrode of the memory cell so that the memory cell develops a first current therein; externally applying a second voltage to the gate electrode of the dummy cell through said input terminal so tat the dummy cell develops a second current therein; and externally varying the value of the second voltage until the second current is substantially equivalent to the first current at a first time, whereby the value of the second voltage at the first time can be obtained as a characteristic value of the memory cell for the semiconductor memory.
Claim 15
Independent Claim
174 words
A method for evaluating a memory cell of a semiconductor memory device, the method comprising the steps of: preparing the semiconductor memory device employing the memory cell and a dummy cell, the memory device having an input terminal coupled to the dummy cell, said memory and dummy cells each having a respective gate electrode, the gate electrode of said dummy cell being coupled to said input terminal; writing a logic ZERO into the memory cell; applying a first voltage to the gate electrode of the memory cell so that the memory cell develops a first current therein; externally applying a second voltage to the gate electrode of the dummy cell through said input terminal so tat the dummy cell develops a second current therein; and externally varying the value of the second voltage until the second current is substantially equivalent to the first current at a first time, whereby the value of the second voltage at the first time can be obtained as a characteristic value of the memory cell for the semiconductor memory.
Claim 16
Dependent Claim
13 words
A method according to claim 12 wherein said varying step is gradually executed.
Claim 17
Dependent Claim
22 words
A method according to claim 12 wherein said varying step includes a step detecting that the second current exceeds the first current.
Claim 18
Dependent Claim
16 words
A method according to claim 14 wherein said detecting step is executed by a sense amplifier.
Claim 19
Dependent Claim
19 words
A method according to claim 12 wherein said varying step is executed while the first voltage is constantly maintained.
Claim 20
Dependent Claim
115 words
A method according to claim 12, further comprising the steps of: writing a logic ONE into the memory cell; applying a third voltage to the gate electrode of the memory cell so that the memory cell develops a third current therein; externally applying a fourth voltage to the gate electrode of the dummy cell through said input terminal so that the dummy cell develops a fourth current therein; and externally varying the value of the third voltage until the third current just exceeds the fourth current at a second time, whereby the value of third voltage at the second time can be obtained as another characteristic value of the memory cell for the semiconductor memory.
Claim 21
Independent Claim
270 words
A method for evaluating a memory cell of a semiconductor memory device, the method comprising the steps of: preparing the semiconductor memory device employing the memory cell and a dummy cell, said memory device having an input terminal coupled to the dummy cell, said memory and dummy cells each having a respective gate electrode, the gate electrode of said dummy cell being coupled to said input terminal; writing a logic ZERO into the memory cell; applying a first voltage to the gate electrode of the memory cell so that the memory cell develops a first current therein; externally applying a second voltage to the gate electrode of the dummy cell through said input terminal so that the dummy cell develops a second current therein; externally varying the value of the second voltage until the second current just exceeds the first current at a first time, whereby the value of second voltage at the first time can be obtained as another characteristic value of the memory cell for the semiconductor memory; writing a logic ONE into the memory cell; applying a third voltage to the gate electrode of the memory cell so that the memory cell develops a third current therein; externally applying a fourth voltage to the gate electrode of the dummy cell so that the dummy cell develops a fourth current therein; and externally varying the value of the third voltage until the third current just exceeds the fourth current at a second time, whereby the value of third voltage at the second time can be obtained as another characteristic value of the memory cell for the semiconductor memory.
Claim 22
Independent Claim
270 words
A method for evaluating a memory cell of a semiconductor memory device, the method comprising the steps of: preparing the semiconductor memory device employing the memory cell and a dummy cell, said memory device having an input terminal coupled to the dummy cell, said memory and dummy cells each having a respective gate electrode, the gate electrode of said dummy cell being coupled to said input terminal; writing a logic ZERO into the memory cell; applying a first voltage to the gate electrode of the memory cell so that the memory cell develops a first current therein; externally applying a second voltage to the gate electrode of the dummy cell through said input terminal so that the dummy cell develops a second current therein; externally varying the value of the second voltage until the second current just exceeds the first current at a first time, whereby the value of second voltage at the first time can be obtained as another characteristic value of the memory cell for the semiconductor memory; writing a logic ONE into the memory cell; applying a third voltage to the gate electrode of the memory cell so that the memory cell develops a third current therein; externally applying a fourth voltage to the gate electrode of the dummy cell so that the dummy cell develops a fourth current therein; and externally varying the value of the third voltage until the third current just exceeds the fourth current at a second time, whereby the value of third voltage at the second time can be obtained as another characteristic value of the memory cell for the semiconductor memory.
Claim 23
Dependent Claim
13 words
A method according to claim 18 wherein said varying step is gradually executed.
Claim 24
Dependent Claim
23 words
A method according to claim 18 wherein said varying step includes a step of detecting that the second current exceeds the first current.
Claim 25
Dependent Claim
16 words
A method according to claim 20 wherein said detecting step is executed by a sense amplifier.
Claim 26
Dependent Claim
19 words
A method according to claim 18 wherein said varying step is executed while the first voltage is constantly maintained.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-09-15 | 1996-03-16 | 1996-09-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-09-15 | 2000-03-16 | 2000-09-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-09-15 | 2004-03-16 | 2004-09-15 | $7700.00 | Window Closed / Lapsed |