US5148252A
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Bipolar transistor
Assignee: Toshiba Corp
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Filing: 1992-02-18
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Granted: 1992-09-15
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Expires: 2012-02-18
Abstract
Abstract A bipolar transistor includes a p-type external base region formed on the major surface of an n-type semiconductor substrate, a plurality of p-type internal base regions formed to be surrounded by the external base region, and emitter regions of a first conductivity type respectively formed in the internal base regions. An oxide film and a nitride film, stacked on each other, extend outward from an outer peripheral portion of the external base region on the major surface of the semiconductor substrate, and define openings therein. A p-type semiconductor film is formed on the external base region in the openings. A first conductive layer having a p-type semiconductor is formed on the nitride film and the semiconductor film. Side-wall-like oxide films are formed on side wall portions, of the semiconductor film and the first conductive layer, opposite to the emitter regions. A second conductive layer having an n-type semiconductor and serving as an emitter electrode extraction portion is formed on the side-wall-like oxide films to be in contact with the emitter regions.
Inventors
- 👤 Shin-ichi Taka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 18:08
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; H10D; H10D10/00; H10D10/01; H10D10/021; H10D10/051; H10D10/056; H10D10/058; H10D10/40; H10D10/421; H10D10/80; H10D10/821; H10D10/861; H10D64/00; H10D64/20; H10D64/23; H10D64/231; H10D64/27; H10D64/281
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
243 words
A bipolar transistor comprising: a semiconductor substrate of a first conductivity type; an external base region of a second conductivity type, said external base region being on a major surface of said semiconductor substrate; a plurality of internal base regions of the second conductivity type on the major surface of said semiconductor substrate, each of said internal base regions being surrounded by said external base region, and said external base region having a higher impurity concentration than each of said internal base regions; emitter regions of the first conductivity type respectively in said internal base regions; a first insulating layer on the major surface of said semiconductor substrate and extending outward from an outer peripheral portion of said external base region and defining openings therein; a base electrode extraction layer on said external base region, said base electrode extraction layer contacting with portion of said external base region between two of said internal base regions, and said base electrode extraction layer having a width equal to the distance between said two of said internal base regions; an insulating film on said base electrode extraction layer; a second insulating layer on side wall portions of said base electrode extraction layer adjacent to said emitter regions, and on a portion of the major surface of said semiconductor substrate extending from the side wall portions to said emitter regions; and an emitter electrode extraction layer on said second insulating layer and contacting with said emitter regions.
Claim 2
Dependent Claim
243 words
A bipolar transistor comprising: a semiconductor substrate of a first conductivity type; an external base region of a second conductivity type, said external base region being on a major surface of said semiconductor substrate; a plurality of internal base regions of the second conductivity type on the major surface of said semiconductor substrate, each of said internal base regions being surrounded by said external base region, and said external base region having a higher impurity concentration than each of said internal base regions; emitter regions of the first conductivity type respectively in said internal base regions; a first insulating layer on the major surface of said semiconductor substrate and extending outward from an outer peripheral portion of said external base region and defining openings therein; a base electrode extraction layer on said external base region, said base electrode extraction layer contacting with portion of said external base region between two of said internal base regions, and said base electrode extraction layer having a width equal to the distance between said two of said internal base regions; an insulating film on said base electrode extraction layer; a second insulating layer on side wall portions of said base electrode extraction layer adjacent to said emitter regions, and on a portion of the major surface of said semiconductor substrate extending from the side wall portions to said emitter regions; and an emitter electrode extraction layer on said second insulating layer and contacting with said emitter regions.
Claim 3
Dependent Claim
39 words
A transistor according to claim 1, wherein said first insulating layer is composed of first and second insulating films stacked on each other, and wherein said insulating film on said base electrode extraction layer is a third insulating film.
Claim 4
Dependent Claim
24 words
A transistor according to claim 1, wherein said first and second insulating films are respectively composed of an oxide film and a nitride film.
Claim 5
Dependent Claim
23 words
A transistor according to claim 2, wherein said second insulating layer is composed of fourth and fifth insulating films stacked on each other.
Claim 6
Dependent Claim
16 words
A transistor according to claim 4, wherein said fourth and fifth insulating films are oxide films.
Claim 7
Dependent Claim
33 words
A transistor according to claim 1, wherein said base electrode extraction layer is composed of a semiconductor film and a metal/semiconductor film both of which contain an impurity of the second conductivity type.
Claim 8
Dependent Claim
26 words
A transistor according to claim 1, wherein said emitter electrode extraction layer is composed of a semiconductor film containing an impurity of the first conductivity type.
Claim 9
Dependent Claim
33 words
A transistor according to claim 1, wherein said base electrode extraction layer is composed of a semiconductor film and a metal/semiconductor film both of which contain an impurity of the first conductivity type.
Claim 10
Dependent Claim
276 words
A bipolar transistor comprising: a semiconductor substrate of a first conductivity type; an external base region of a second conductivity type, said external base region being on a major surface of said semiconductor substrate; a plurality of internal base regions containing an impurity of the second conductivity type on the major surface of said semiconductor substrate, each of said internal base regions being surrounded by said external base region, and said external base region having a higher impurity concentration than each of said internal base regions; emitter regions of the first conductivity type respectively in said internal base regions; first and second insulating films, said first film being positioned on said second film, and said first and second insulating films being on the major surface of said semiconductor substrate and extending outward from an outer peripheral portion of said external base region and defining openings therein; a base electrode extraction layer on said external base region, said base electrode extraction layer contacting with portions of said external base region between two of said internal base regions, and said base extraction layer having a width equal to the distance between said two of said internal base regions; a third insulating film on said base electrode extraction layer; fourth and fifth insulating films positioned one on the other, said fourth and fifth insulating films on side wall portions of said base electrode extraction layer adjacent to said emitter regions, and on a portion of the major surface of said semiconductor substrate extending from the side wall portions to said emitter regions; and an emitter electrode extraction layer on said fifth insulating film and contacting with said emitter regions.
Claim 11
Dependent Claim
276 words
A bipolar transistor comprising: a semiconductor substrate of a first conductivity type; an external base region of a second conductivity type, said external base region being on a major surface of said semiconductor substrate; a plurality of internal base regions containing an impurity of the second conductivity type on the major surface of said semiconductor substrate, each of said internal base regions being surrounded by said external base region, and said external base region having a higher impurity concentration than each of said internal base regions; emitter regions of the first conductivity type respectively in said internal base regions; first and second insulating films, said first film being positioned on said second film, and said first and second insulating films being on the major surface of said semiconductor substrate and extending outward from an outer peripheral portion of said external base region and defining openings therein; a base electrode extraction layer on said external base region, said base electrode extraction layer contacting with portions of said external base region between two of said internal base regions, and said base extraction layer having a width equal to the distance between said two of said internal base regions; a third insulating film on said base electrode extraction layer; fourth and fifth insulating films positioned one on the other, said fourth and fifth insulating films on side wall portions of said base electrode extraction layer adjacent to said emitter regions, and on a portion of the major surface of said semiconductor substrate extending from the side wall portions to said emitter regions; and an emitter electrode extraction layer on said fifth insulating film and contacting with said emitter regions.
Claim 12
Dependent Claim
33 words
A transistor according to claim 9, wherein said base electrode extraction layer is composed of a semiconductor film and a metal/semiconductor film both of which contain an impurity of the second conductivity type.
Claim 13
Dependent Claim
33 words
A transistor according to claim 9, wherein said base electrode extraction layer is composed of a semiconductor film and a metal/semiconductor film both of which contain an impurity of the first conductivity type.
References Cited (Backward Citations)
US4996581A
Cited
US5001533A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-09-15 | 1996-03-16 | 1996-09-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-09-15 | 2000-03-16 | 2000-09-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-09-15 | 2004-03-16 | 2004-09-15 | $7700.00 | Window Closed / Lapsed |