Monolithic microwave integrated circuit noise generator and variable resistance device

Claim 2

A monolithic microwave integrated circuit device for generating a noise signal, comprising: a monolithic integrated circuit substrate; a microwave transmission line formed on the substrate; semiconductor resistor means formed in the substrate and electrically coupled to the transmission line for producing a noise signal therein in response to the application of heat to the semiconductor resistor means; an electrically insulating dielectric layer deposited over the semiconductor resistor means; an integrated circuit heating element formed on top of the dielectric layer and in sufficiently close proximity to the semiconductor resistor means to be thermally coupled thereto through the dielectric layer; and means for applying electrical energy to the heating element for causing the semiconductor resistor means to produce a noise signal.

Claim 3

The device of claim 1, wherein the heating element is a thin film metal resistor deposited on the dielectric layer by integrated circuit techniques.

Claim 4

The device of claim 2, wherein the substrate is gallium arsenide and further wherein the semiconductor resistor means is formed by ion implantation of at least a portion of the gallium arsenide.

Claim 5

The device of claim 3, wherein the thin film metal resistor is formed with titanium and platinum.

Claim 6

The device of claim 4, wherein the dielectric layer is formed with silicon nitride or silicon oxide.

Claim 7

A monolithic microwave integrated circuit device for generating a noise signal, comprising: a monolithic integrated circuit substrate; a microwave transmission line including a series connected resistor means, the transmission line being formed on the substrate; a semiconductor heating element formed in the substrate and located beneath the resistor means for coupling heat thereto; an electrically insulating dielectric layer located over the semiconductor heating element and beneath the resistor means; and means for applying electrical energy to the semiconductor heating element, wherein the resistor means is formed over the dielectric layer in sufficiently close proximity to the semiconductor heating element to be thermally coupled thereto through the dielectric layer, for producing a noise signal in the transmission line in response to the application of heat thereto from the semiconductor heating element.

Claim 8

A monolithic microwave integrated circuit device for generating a noise signal, comprising: a monolithic integrated circuit substrate; a microwave transmission line including a series connected resistor means, the transmission line being formed on the substrate; a semiconductor heating element formed in the substrate and located beneath the resistor means for coupling heat thereto; an electrically insulating dielectric layer located over the semiconductor heating element and beneath the resistor means; and means for applying electrical energy to the semiconductor heating element, wherein the resistor means is formed over the dielectric layer in sufficiently close proximity to the semiconductor heating element to be thermally coupled thereto through the dielectric layer, for producing a noise signal in the transmission line in response to the application of heat thereto from the semiconductor heating element.

Claim 9

The device of claim 6, wherein the transmission line resistor means is a thin film metal resistor deposited on the dielectric layer by integrated circuit techniques.

Claim 10

The device of claim 7, wherein the substrate is gallium arsenide and further wherein the semiconductor heating element is formed by ion implantation of at least a portion of the gallium arsenide.

Claim 11

The device of claim 8, wherein the thin film metal resistor is formed with titanium and platinum.

Claim 12

The device of claim 9, wherein the dielectric layer is formed with silicon nitride or silicon oxide.

Claim 13

A monolithic microwave integrated resistor having an electrically variable resistance value, comprising: a monolithic integrated circuit substrate; a microwave transmission line formed on the substrate; semiconductor resistor means formed in the substrate and electrically coupled to the transmission line for providing an electrical resistance which is variable in response to the temperature thereof; an electrically insulating dielectric layer deposited over the semiconductor resistor means; an integrated circuit heating element formed on top of the dielectric layer and in sufficiently close proximity to the semiconductor resistor means to be thermally coupled thereto through the dielectric layer; and means for applying electrical energy to the heating element for causing the resistance of the semiconductor resistor means to change.

Claim 14

A monolithic microwave integrated resistor having an electrically variable resistance value, comprising: a monolithic integrated circuit substrate; a microwave transmission line formed on the substrate; semiconductor resistor means formed in the substrate and electrically coupled to the transmission line for providing an electrical resistance which is variable in response to the temperature thereof; an electrically insulating dielectric layer deposited over the semiconductor resistor means; an integrated circuit heating element formed on top of the dielectric layer and in sufficiently close proximity to the semiconductor resistor means to be thermally coupled thereto through the dielectric layer; and means for applying electrical energy to the heating element for causing the resistance of the semiconductor resistor means to change.

Claim 15

The device of claim 11, wherein the heating element is a thin film metal resistor deposited on the dielectric layer by integrated circuit techniques.

Claim 16

The device of claim 12, wherein the substrate is gallium arsenide and further wherein the semiconductor resistor means is formed by ion implantation of at least a portion of the gallium arsenide.

Claim 17

The device of claim 13, wherein the thin film metal resistor is formed with titanium and platinum.

Claim 18

The device of claim 14, wherein the dielectric layer is formed with silicon nitride or silicon oxide.

Claim 19

A monolithic microwave integrated circuit resistor having an electrically variable resistance value, comprising: a monolithic integrated circuit substrate; a microwave transmission line including a series connected resistor means, the transmission line being formed on the substrate; a semiconductor heating element formed in the substrate and located beneath the resistor means for coupling heat thereto; an electrically insulating dielectric layer located over the semiconductor heating element and beneath the resistor means; and means for applying electrical energy to the semiconductor heating element, wherein the resistor means is formed over the dielectric layer in sufficiently close proximity to the semiconductor heating element to be thermally coupled thereto through the dielectric layer, for causing variation of the resistance of the resistor means in response to the application of heat thereto from the semiconductor heating element.

Claim 20

A monolithic microwave integrated circuit resistor having an electrically variable resistance value, comprising: a monolithic integrated circuit substrate; a microwave transmission line including a series connected resistor means, the transmission line being formed on the substrate; a semiconductor heating element formed in the substrate and located beneath the resistor means for coupling heat thereto; an electrically insulating dielectric layer located over the semiconductor heating element and beneath the resistor means; and means for applying electrical energy to the semiconductor heating element, wherein the resistor means is formed over the dielectric layer in sufficiently close proximity to the semiconductor heating element to be thermally coupled thereto through the dielectric layer, for causing variation of the resistance of the resistor means in response to the application of heat thereto from the semiconductor heating element.

Claim 21

The device of claim 16, wherein the transmission line resistor means is a thin film metal resistor deposited on the dielectric layer by integrated circuit techniques.

Claim 22

The device of claim 17, wherein the substrate is gallium arsenide and further wherein the semiconductor heating element is formed by ion implantation of at least a portion of the gallium arsenide.

Claim 23

The device of claim 18, wherein the thin film metal resistor is formed with titanium and platinum.

Claim 24

The device of claim 19, wherein the dielectric layer is formed with silicon nitride or silicon oxide.