US5144637A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Inline diplex lightwave transceiver
Assignee: Nokia Bell Labs
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Filing: 1990-04-30
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Granted: 1992-09-01
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Expires: 2010-04-30
Abstract
Abstract Full duplex lightwave communications is achieved in a diplex transceiver realized in a semiconductor photonic integrated circuit having an inline interconnecting waveguide integral with the transmitting and receiving portions of the transceiver. Semiconductor lasers and detectors operating in different wavelength regimes permit diplex or wavelength-division-multiplexed operation. In the transceiver, lightwave signals from the laser propagate through the detector without interfering with the detector operation or the lightwave signals being detected.
Inventors
- 👤 Thomas L. Koch
- 👤 Herwig Kogelnik
- 👤 Uziel Koren
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:15
CPC Classifications
H; H10; H10H; H10H29/00; H10H29/10; G; G02; G02B; G02B6/00; G02B6/24; G02B6/42; G02B6/4201; G02B6/4246; H01; H01S; H01S5/00; H01S5/02; H01S5/026; H01S5/0262
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
130 words
A semiconductor device for transmitting a first lightwave signal at a first wavelength and for receiving a second lightwave signal at a second wavelength, said semiconductor device comprising, a waveguide for supporting propagation of said first and second lightwave signals wherein said waveguide includes a semiconductor material layer having a photoluminescence wavelength less than or equal to said second wavelength, means for generating said first lightwave signal, and means for detecting said second lightwave signal from a portion of said waveguide, said second wavelength being less than said first wavelength, said waveguide being integral with said generating means and said detecting means, said generating means and said detecting means disposed collinearly along a longitudinal axis of said waveguide so that signals from said generating means propagate through said detecting means.
Claim 2
Dependent Claim
130 words
A semiconductor device for transmitting a first lightwave signal at a first wavelength and for receiving a second lightwave signal at a second wavelength, said semiconductor device comprising, a waveguide for supporting propagation of said first and second lightwave signals wherein said waveguide includes a semiconductor material layer having a photoluminescence wavelength less than or equal to said second wavelength, means for generating said first lightwave signal, and means for detecting said second lightwave signal from a portion of said waveguide, said second wavelength being less than said first wavelength, said waveguide being integral with said generating means and said detecting means, said generating means and said detecting means disposed collinearly along a longitudinal axis of said waveguide so that signals from said generating means propagate through said detecting means.
Claim 3
Dependent Claim
21 words
The semiconductor device as defined in claim 1 further comprising means for electrically isolating said generating means from said detecting means.
Claim 4
Dependent Claim
32 words
The semiconductor device as defined in claim 2 wherein the isolating means includes a body of semi-insulating semiconductor material disposed over said waveguide and between said generating means and said detecting means.
Claim 5
Dependent Claim
17 words
The semiconductor device as defined in claim 3 wherein the generating means includes a distributed feedback laser.
Claim 6
Dependent Claim
18 words
The semiconductor device as defined in claim 3 wherein the generating means includes a distributed Bragg reflector laser.
Claim 7
Dependent Claim
16 words
The semiconductor device as defined in claim 3 wherein the generating means includes a Fabry-Perot laser.
Claim 8
Dependent Claim
54 words
The semiconductor device as defined in claim 1 wherein said waveguide includes a lower cladding layer, a core waveguide layer formed on said lower cladding layer, and an upper cladding layer formed over said core waveguide layer wherein said upper and lower cladding layers provide optical confinement for the lightwave signals in the waveguide.
Claim 9
Dependent Claim
167 words
A lightwave communication system comprising at least first and second stations and means for interconnecting said stations, said first station for transmitting lightwave signals at a second wavelength and receiving lightwave signals at a first wavelength, said second station for transmitting lightwave signals at a first wavelength and receiving lightwave signals at a second wavelength, said second wavelength being less than said first wavelength, the communication system CHARACTERIZED IN THAT said second stations comprises a waveguide for supporting propagation of said first and second lightwave signals wherein said waveguide includes a semiconductor material layer having a photoluminescence wavelength less than or equal to said second wavelength, means for generating said first lightwave signal, and means for detecting said second lightwave signal from a portion of said waveguide, said waveguide being integral with said generating means and said detecting means, said generating means and said detecting means disposed colinearly along a longitudinal axis of said waveguide so that signals from said generating means propagate through said detecting means.
Claim 10
Dependent Claim
167 words
A lightwave communication system comprising at least first and second stations and means for interconnecting said stations, said first station for transmitting lightwave signals at a second wavelength and receiving lightwave signals at a first wavelength, said second station for transmitting lightwave signals at a first wavelength and receiving lightwave signals at a second wavelength, said second wavelength being less than said first wavelength, the communication system CHARACTERIZED IN THAT said second stations comprises a waveguide for supporting propagation of said first and second lightwave signals wherein said waveguide includes a semiconductor material layer having a photoluminescence wavelength less than or equal to said second wavelength, means for generating said first lightwave signal, and means for detecting said second lightwave signal from a portion of said waveguide, said waveguide being integral with said generating means and said detecting means, said generating means and said detecting means disposed colinearly along a longitudinal axis of said waveguide so that signals from said generating means propagate through said detecting means.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1995-09-01 | 1996-03-02 | 1996-09-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-09-01 | 2000-03-02 | 2000-09-01 | $3760.00 | Window Closed / Lapsed |
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