Bandgap voltage generator

Claim 2

A bandgap voltage generator comprising: (a) a pair of bipolar transistors connected in common collector configuration, (b) resistors in series with bipolar transistor emitters for establishing a positive temperature coefficient voltage drop sufficient to offset a negative emitter-base voltage drop, (c) a first pair of field effect transistors connected as a source follower in series with the emitters of the bipolar transistors for establishing a bandgap potential difference, (d) a current comparator connected in series with the drains of the first pair of field effect transistors, whose output drive the gates of said first pair of transistors for controlling the emitter currents in the bipolar transistors, and (e) said current comparator and said common collector being connected across a power source.

Claim 3

A bandgap generator as defined in claim 1, in which one of the two bipolar transistors is physically larger than the other, and in which the current comparator includes means for controlling the emitter-collector currents in the bipolar transistors to be equal.

Claim 4

A bandgap generator as defined in claim 1, in which the two bipolar transistors are equal in physical size, and in which the current comparator includes means for controlling the emitter-collector currents in the bipolar transistor to be greater in one transistor than in the other.

Claim 5

A bandgap generator as defined in claim 1, in which the two bipolar transistors are different in physical size, and in which the current comparator includes means for controlling the emitter-collector currents in the bipolar transistor to be greater in one transistor than in the other.

Claim 6

A bandgap voltage generator as defined in claim 1 including means for comparing an input voltage to a bandgap potential level of said bandgap potential difference comprising: (i) means for applying an input voltage to the gate of the first pair of transistors, and (ii) means for sensing a logic voltage level at the drain of one of said first pair of transistors, whereby the logic level changes depending on whether the input voltage is higher or lower than the bandgap potential plus an N-channel threshold.

Claim 7

A bandgap voltage generator comprising: (a) a pair of similar polarity type bipolar transistors having their bases connected together to ground and their collectors connected together to a voltage level less than or equal to ground, a first one of the transistors being physically larger than the other, (b) a pair of resistive means connected in series with the emitters of the transistors, the resistive means connected to said first transistor having larger resistance than the other, (c) a first similar pair of similar conductivity type field effect transistors being connected with their sources in series with respective ones of said resistive means, the gates of said field effect transistor being connected together, (d) a second pair of similar conductivity type field effect transistors having conductivity type opposite that of the first pair of field effect transistors, the drain of one thereof being connected to the source of the other, the source of said one thereof being connected to a high level voltage source V dd , and the drain of said other thereof being connected to the drain of one of said first pair of field effect transistors, (e) a third pair of field effect transistors of similar type to said second pair of field effect transistors, each having its gate connected to its drain, the drain of one being connected to the source of the other, and its source being connected to said voltage source V dd , the drain of the other being connected to the drain of the other of the first pair of field effect transistors, (f) the gate of said one of said first pair of field effect transistors being connected to its drain, whereby a bandgap voltage is effected at the sources of said first pair of field effect transistors.

Claim 8

A bandgap voltage generator comprising: (a) a pair of similar polarity type bipolar transistors having their bases connected together to ground and their collectors connected together to a voltage level less than or equal to ground, a first one of the transistors being physically larger than the other, (b) a pair of resistive means connected in series with the emitters of the transistors, the resistive means connected to said first transistor having larger resistance than the other, (c) a first similar pair of similar conductivity type field effect transistors being connected with their sources in series with respective ones of said resistive means, the gates of said field effect transistor being connected together, (d) a second pair of similar conductivity type field effect transistors having conductivity type opposite that of the first pair of field effect transistors, the drain of one thereof being connected to the source of the other, the source of said one thereof being connected to a high level voltage source V dd , and the drain of said other thereof being connected to the drain of one of said first pair of field effect transistors, (e) a third pair of field effect transistors of similar type to said second pair of field effect transistors, each having its gate connected to its drain, the drain of one being connected to the source of the other, and its source being connected to said voltage source V dd , the drain of the other being connected to the drain of the other of the first pair of field effect transistors, (f) the gate of said one of said first pair of field effect transistors being connected to its drain, whereby a bandgap voltage is effected at the sources of said first pair of field effect transistors.

Claim 9

A bandgap voltage generator as defined in claim 6, in which the values of said resistors are selected to create a positive coefficient voltage reference.

Claim 10

A bandgap voltage generator as defined in claim 6, in which the values of said resistors are selected to create a negative coefficient voltage reference.

Claim 11

A bandgap voltage generator comprising: (a) a pair of similar polarity type bipolar transistors having their bases connected together to ground and their collectors connected together to a voltage level less than or equal to ground, a first one of the transistors being physically larger than the other, (b) a pair of resistive means connected in series with the emitters of the transistors, the resistive means connected to said first transistor having larger resistance than the other, (c) a first similar pair of similar conductivity type field effect transistors being connected with their sources in series with respective ones of said resistive means, the gates of said field effect transistor being connected together, (d) a second pair of similar conductivity type field effect transistors having conductivity type opposite that of the first pair of field effect transistors, the drain of one thereof being connected to the source of the other, the source of said one thereof being connected to a high level voltage source V dd , and the drain of said other thereof being connected to the drain of one of said first pair of field effect transistors, (e) a third pair of field effect transistors of similar type to said second pair of field effect transistors, each having its gate connected to its drain, the drain of one being connected to the source of the other, and its source being connected to said voltage source V dd , the drain of the other being connected to the drain of the other of the first pair of field effect transistors, and further including means for comparing an input voltage with a bandgap potential comprising: (g) means for applying an input voltage to the gates of said first pair of field effect transistors, and (h) means for providing a logic level output at the drain of said first pair of field effect transistors representing the level of the input voltage compared to said bandgap potential.

Claim 12

A bandgap voltage generator comprising: (a) a pair of similar polarity type bipolar transistors having their bases connected together to ground and their collectors connected together to a voltage level less than or equal to ground, a first one of the transistors being physically larger than the other, (b) a pair of resistive means connected in series with the emitters of the transistors, the resistive means connected to said first transistor having larger resistance than the other, (c) a first similar pair of similar conductivity type field effect transistors being connected with their sources in series with respective ones of said resistive means, the gates of said field effect transistor being connected together, (d) a second pair of similar conductivity type field effect transistors having conductivity type opposite that of the first pair of field effect transistors, the drain of one thereof being connected to the source of the other, the source of said one thereof being connected to a high level voltage source V dd , and the drain of said other thereof being connected to the drain of one of said first pair of field effect transistors, (e) a third pair of field effect transistors of similar type to said second pair of field effect transistors, each having its gate connected to its drain, the drain of one being connected to the source of the other, and its source being connected to said voltage source V dd , the drain of the other being connected to the drain of the other of the first pair of field effect transistors, and further including means for comparing an input voltage with a bandgap potential comprising: (g) means for applying an input voltage to the gates of said first pair of field effect transistors, and (h) means for providing a logic level output at the drain of said first pair of field effect transistors representing the level of the input voltage compared to said bandgap potential.

Claim 13

A bandgap voltage generator as defined in claim 6 in which said bipolar transistors are of NPN type and said first pair of field effect transistors are P-channel conductive types.

Claim 14

A bandgap voltage generator as defined in claim 9, in which said bipolar transistors are of NPN type and said first pair of field effect transistors are of P-channel conductivity types.

Claim 15

A bandgap voltage generator as defined in claim 6, in which said bipolar transistors are of PNP type and said first pair of field effect transistors are N-channel conductivity types.

Claim 16

A bandgap voltage generator as defined in claim 9, in which said bipolar transistors are of PNP type and said first pair of field effect transistors are N-channel conductivity types.

Claim 17

A bandgap voltage generator as defined in claim 9 further including a voltage divider connected across a voltage source for providing a stepped-down said input voltage.

Claim 18

A bandgap voltage generator as defined in claim 6 further comprising a field effect transistor switch having one side of its drain-source circuit connected to the high level voltage source V dd , the other side connected to a reservoir capacity for a regulated voltage output, a bandgap voltage reference and a comparator connected between the other side of said drain-source circuit and ground, and the output of the bandgap voltage reference and comparator connected to the gate of said field effect transistor switch, whereby a power supply can be provided to circuits connected across said capacitor depending on the level of said regulated voltage output.

Claim 19

A bandgap voltage referenced voltage regulator comprising a field effect transistor switch having one side of its drain-source circuit connected to a high level voltage source V dd and the other side connected to a reservoir capacitor for a regulated voltage output, a bandgap voltage reference as defined in claim 1 connected between the other side of said drain-source circuit and ground, the output of the bandgap voltage reference connected to the gate of said field effect transistor-switch, whereby a power supply can e provided to circuits connected across said capacitor depending on the level of said regulated voltage output.