US5144138A
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Infrared detector and method
Assignee: DRS Infrared Technologies LP
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Filing: 1989-10-06
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Granted: 1992-09-01
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Expires: 2009-10-06
Abstract
Abstract Photocapacitive detectors with varying bandgap Hg 1-x Cd x Te (604) for two color detection and one color detection with increased potential well capacity. Preferred embodiments include a transparent insulated gate (608) on a top layer (632) of Hg 0 .8 Cd 0 .2 Te over a lower layer (634) of Hg 0 .83 Cd 0 .27 Te for detection of two infrared colors by varying gate potential to either confine the potential well to the top layer or to extend the potential well to both layers. Also, methods of compositionally grading the Hg 1-x Cd x Te by fluid transport plus diffusion.
Inventors
- 👤 Michael A. Kinch
- 👤 C. Grady Roberts
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 04:16
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/011; H10F39/022; H10F39/10; H10F39/12; H10F39/18; H10F39/184; H10F39/1843; H10F39/80; H10F39/803; H10F39/8037; H10F39/80373
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
82 words
A radiation detector, comprising: (a) an insulated gate over a layer of semiconductor material, said material with a first bandgap adjacent said gate and a second bandgap a depletion region depth from said gate, said first bandgap larger than said second bandgap, and said second bandgap of energy comparable to the energy of at least a portion of photons of radiation to be detected; (b) a potential source intermittently connected between said gate and said layer; and (c) a gate potential detector.
Claim 2
Dependent Claim
82 words
A radiation detector, comprising: (a) an insulated gate over a layer of semiconductor material, said material with a first bandgap adjacent said gate and a second bandgap a depletion region depth from said gate, said first bandgap larger than said second bandgap, and said second bandgap of energy comparable to the energy of at least a portion of photons of radiation to be detected; (b) a potential source intermittently connected between said gate and said layer; and (c) a gate potential detector.
Claim 3
Dependent Claim
39 words
The detector of claim 1, wherein: (a) said semiconductor material is Hg 1-x Cd x Te, with x=x 1 from adjacent said gate to a first depth and with x=x 2 from a first depth to a second depth.
Claim 4
Dependent Claim
14 words
The detector of claim 2, wherein: (a) x 1 ≈0.27 and x 2 ≈0.2.
Claim 5
Dependent Claim
14 words
The detector of claim 2, wherein: (a) x 1 ≈0.3 and x 2 ≈0.2.
Claim 6
Dependent Claim
74 words
The detector of claim 2, wherein: (a) said potential source has at least first and second potential levels, said levels characterized by said first potential level applied between said gate and said layer creates a depletion region extending to a depth less than or equal to said first depth and said second potential level applied between said gate and said layer creates a depletion region extending to a depth greater than said first depth.
Claim 7
Dependent Claim
28 words
The detector of claim 1, wherein: (a) said semiconductor material is Hg 1-x Cd x Te, with x continuously decreasing from adjacent said gate to a first depth.
Claim 8
Dependent Claim
106 words
An infrared imager, comprising: (a) a plurality of pixels formed on a layer of semiconductor material, each of said pixels including: i. an insulated gate over said layer, said material with a first bandgap adjacent said gates and a second bandgap a depletion region depth from said gates, said first bandgap larger than said second bandgap, and said second bandgap of energy comparable to the energy of at least a portion of photons of infrared radiation to be detected; (b) a source of potential intermittently connected between each of said gates and said layer; and (c) a potential detector intermittently connected to each of said gates.
Claim 9
Dependent Claim
106 words
An infrared imager, comprising: (a) a plurality of pixels formed on a layer of semiconductor material, each of said pixels including: i. an insulated gate over said layer, said material with a first bandgap adjacent said gates and a second bandgap a depletion region depth from said gates, said first bandgap larger than said second bandgap, and said second bandgap of energy comparable to the energy of at least a portion of photons of infrared radiation to be detected; (b) a source of potential intermittently connected between each of said gates and said layer; and (c) a potential detector intermittently connected to each of said gates.
Claim 10
Dependent Claim
39 words
The imager of claim 7, wherein: (a) said semiconductor material is Hg 1-x Cd x Te, with x=x 1 from adjacent said gate to a first depth and with x=x 2 from a first depth to a second depth.
Claim 11
Dependent Claim
14 words
The imager of claim 8, wherein: (a) x 1 ≈0.27 and x 2 ≈0.2.
Claim 12
Dependent Claim
14 words
The image of claim 8, wherein: (a) x 1 ≈0.3 and x 2 ≈0.2.
Claim 13
Dependent Claim
77 words
The imager of claim 8, wherein: (a) said potential source has at least first and second potential levels, said levels characterized by said first potential level applied between one of said gates and said layer creates a depletion region extending to a depth less than or equal to said first depth and said second potential level applied between said one gate and said layer creates a depletion region extending to a depth greater than said first depth.
Claim 14
Dependent Claim
28 words
The imager of claim 7, wherein: (a) said semiconductor material is Hg 1-x Cd x Te, with x continuously decreasing from adjacent said gate to a first depth.
Claim 15
Independent Claim
49 words
A method of detection of radiation, comprising the steps of: (a) providing a layer of semiconductor material with bandgap decreasing with depth and with a gate over said layer; (b) intermittently applying a potential between said gate and said layer; and (c) intermittently detecting the potential on said gate.
Claim 16
Independent Claim
49 words
A method of detection of radiation, comprising the steps of: (a) providing a layer of semiconductor material with bandgap decreasing with depth and with a gate over said layer; (b) intermittently applying a potential between said gate and said layer; and (c) intermittently detecting the potential on said gate.
Claim 17
Dependent Claim
42 words
The method of claim 13, wherein: (a) said intermittently applied potential has first and second levels and thereby creates first and second depth depletion regions in said layer with second depth regions extending into smaller bandgap material than said first depth regions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-09-01 | 1996-03-02 | 1996-09-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-09-01 | 2000-03-02 | 2000-09-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-09-01 | 2004-03-02 | 2004-09-01 | $7700.00 | Window Closed / Lapsed |