Abstract A first conductivity type first semiconductor layer is formed on an insulation substrate and a second conductivity type second semiconductor layer is formed on the first semiconductor layer in order to provide a semiconductor device having a highly reliable electrode structure. In order to accomplish this electrode structure, a first electrode which is insulated from the first semiconductor layer with an insulation film, is formed on an area extending from a part of the second semiconductor layer to an exposed surface of the insulation substrate which is not covered with the first semiconductor layer. A second electrode, which is separate from the second semiconductor layer, is formed on a part of the first semiconductor layer which is not covered with the second semiconductor layer. Using this construction, a solar battery cell can be realized. Additionally, the first electrode has a connection region on the exposed surface of the insulation substrate in order to provide connection with an external terminal. This enables welding or bonding with an external terminal on this particular connection region.
A semiconductor device comprising: an insulation substrate; a first conductivity type first semiconductor layer formed partially on a surface of said insulation substrate; a second conductivity type second semiconductor layer formed partially on a surface of said first semiconductor layer; and insulating film formed to extend from a part of the surface of said insulation substrate not provided thereon with said first semiconductor layer to a part of a surface of said second semiconductor layer; a first electrode formed on another part of the surface of said insulation substrate not provided thereon with said first semiconductor layer, a surface of said insulating film and another part of the surface of said second semiconductor layer, and electrically bonding connected with said second semiconductor layer on said another part of the surface of said second semiconductor layer, a region of said first electrode on said another part of the surface of said insulation substrate serving as a region to be connected with an external terminal; and a second electrode formed on a part of the surface of said first semiconductor layer not provided thereon with said second semiconductor layer, with being insulated from said second semiconductor layer.
Claim 2
Dependent Claim
195 words
A semiconductor device comprising: an insulation substrate; a first conductivity type first semiconductor layer formed partially on a surface of said insulation substrate; a second conductivity type second semiconductor layer formed partially on a surface of said first semiconductor layer; and insulating film formed to extend from a part of the surface of said insulation substrate not provided thereon with said first semiconductor layer to a part of a surface of said second semiconductor layer; a first electrode formed on another part of the surface of said insulation substrate not provided thereon with said first semiconductor layer, a surface of said insulating film and another part of the surface of said second semiconductor layer, and electrically bonding connected with said second semiconductor layer on said another part of the surface of said second semiconductor layer, a region of said first electrode on said another part of the surface of said insulation substrate serving as a region to be connected with an external terminal; and a second electrode formed on a part of the surface of said first semiconductor layer not provided thereon with said second semiconductor layer, with being insulated from said second semiconductor layer.
Claim 3
Dependent Claim
22 words
A semiconducor device in accordance with claim 1, wherein said first conductivity type is n-type and said second conductivity type is p-type.
Claim 4
Dependent Claim
29 words
A semiconductor device in accordance with claim 1, wherein said first semiconductor layer and said second semiconductor layer are prepared by GaAs, said semiconductor device having photoelectric conversion function.
Claim 5
Dependent Claim
33 words
a semiconductor device in accordance with claim 1, wherein the planar structure of said first electrode includes a comb-type electrode portion on said another part of the surface of said second semiconductor layer.