Patent US3099777A successfully refreshed from Google Patents.
US5142239A
Expired / Lapsed
US
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High frequency linear amplifier assembly
Assignee: NXP USA Inc
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Filing: 1991-05-20
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Granted: 1992-08-25
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Expires: 2011-05-20
Abstract
Abstract A wide bandwidth linear amplifier (10) that has an operating band in excess of 1 GHz mounts the high power dissipating components (11) of the amplifier (10), and the components 917, 18) that control the high frequency gain and stability of the amplifier (10) onto a daughter board (32) that has a high thermal conductivity. The daughter board (32) and the remaining circuit components (21, 22, 23, 24, 26a, 26b) are then mounted on a mother board (31) that has a lower thermal conductivity. The assembly (30) reduces the circuit's parasitic inductance (46, 47, 48, 49) and parasitic capacitance (51, 52), and provides unconditional stability at high frequencies.
Inventors
- 👤 Daniel C. Brayton
- 👤 Ngai-Ming Lau
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 10:04
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/189; H03F3/19; H03F3/191; H05; H05K; H05K1/00; H05K1/02; H05K1/14; H05K1/141; H05K1/0213; H05K1/0216; H05K1/0237; H05K1/03; H05K1/0306; H05K1/16; H05K1/162; H05K1/167; H05K2201/00; H05K2201/07; H05K2201/0776; H05K2201/0792; H05K2201/10; H05K2201/10007; H05K2201/10166; H05K2203/00; H05K2203/04; H05K2203/049; H05K3/00; H05K3/30; H05K3/32; H05K3/328; H05K3/34; H05K3/341; H05K3/36; H05K3/368
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
157 words
A high frequency linear amplifier assembly comprising: an active section; a daughter board having a first thermal conductivity and also having the active section attached to a first surface of the daughter board to reduce parasitic inductance wherein the daughter board provides a means for dissipating heat generated by the active section; a plurality of metal areas on a second surface of the daughter board wherein each of the metal areas is electrically isolated; a first feedback section; a second feedback section; an input coupling section; an output coupling section; a biasing section; and a mother board that has the first feedback section, the second feedback section, the input coupling section, the output coupling section, the biasing section, and the daughter board on the mother board, wherein the mother board has a second thermal conductivity that is less than the first thermal conductivity, and the daughter board is electrically connected to the mother board by wire bonds.
Claim 2
Dependent Claim
157 words
A high frequency linear amplifier assembly comprising: an active section; a daughter board having a first thermal conductivity and also having the active section attached to a first surface of the daughter board to reduce parasitic inductance wherein the daughter board provides a means for dissipating heat generated by the active section; a plurality of metal areas on a second surface of the daughter board wherein each of the metal areas is electrically isolated; a first feedback section; a second feedback section; an input coupling section; an output coupling section; a biasing section; and a mother board that has the first feedback section, the second feedback section, the input coupling section, the output coupling section, the biasing section, and the daughter board on the mother board, wherein the mother board has a second thermal conductivity that is less than the first thermal conductivity, and the daughter board is electrically connected to the mother board by wire bonds.
Claim 3
Dependent Claim
42 words
The high frequency amplifier of claim 1 further including the daughter board attached to the mother board by soldering the plurality of metal areas on the second surface of the daughter board to a plurality of metal areas on the mother board.
Claim 4
Dependent Claim
43 words
The high frequency amplifier of claim 1 wherein the active section includes a plurality of transistors connected in a cascode push-pull circuit configuration, and also includes components that control high frequency out-of-band stability and high frequency out-of-band gain of the cascode push-pull circuit.
Claim 5
Dependent Claim
16 words
The high frequency amplifier of claim 1 wherein the mother board is an alumina mother board.
Claim 6
Dependent Claim
17 words
The high frequency amplifier of claim 1 wherein the daughter board is an aluminum nitride daughter board.
Claim 7
Dependent Claim
17 words
The high frequency amplifier of claim 1 wherein the daughter board is a beryllium oxide daughter board.
Claim 8
Dependent Claim
135 words
A high frequency amplifier comprising: a first section that produces a majority of heat that is produced by the amplifier wherein the first section includes an active section having elements that substantially control high frequency out-of-band stability and that substantially control high frequency out-of-band gain of the amplifier and wherein the elements include a semiconductor die and passive components of the amplifier; a daughter board having a first thermal conductivity wherein the elements of the first section are mounted on the daughter board to reduce parasitic inductance of the elements and parasitic capacitance of the elements thereby improving the stability of the amplifier; and a mother board that is formed from a material that has a thermal conductivity that is lower than the first thermal conductivity wherein the daughter board is on the mother board.
Claim 9
Dependent Claim
135 words
A high frequency amplifier comprising: a first section that produces a majority of heat that is produced by the amplifier wherein the first section includes an active section having elements that substantially control high frequency out-of-band stability and that substantially control high frequency out-of-band gain of the amplifier and wherein the elements include a semiconductor die and passive components of the amplifier; a daughter board having a first thermal conductivity wherein the elements of the first section are mounted on the daughter board to reduce parasitic inductance of the elements and parasitic capacitance of the elements thereby improving the stability of the amplifier; and a mother board that is formed from a material that has a thermal conductivity that is lower than the first thermal conductivity wherein the daughter board is on the mother board.
Claim 10
Dependent Claim
18 words
The high frequency amplifier of claim 7 wherein the daughter board is formed from an aluminum nitride material.
Claim 11
Dependent Claim
18 words
The high frequency amplifier of claim 7 wherein the daughter board is formed from a beryllium oxide material.
Claim 12
Dependent Claim
30 words
The high frequency amplifier of claim 7 further including a wide bandwidth transmission line transformer, which is void of a center tap, to couple an input to the first section.
Claim 13
Dependent Claim
20 words
The high frequency amplifier of claim 7 further including the daughter board mechanically attached to the mother board by soldering.
Claim 14
Dependent Claim
21 words
The high frequency amplifier of claim 7 further including the daughter board electrically connected to the mother board by bonding wires.
Claim 15
Dependent Claim
15 words
The high frequency amplifier of claim 7 wherein the mother board is formed from alumina.
Claim 16
Independent Claim
122 words
A method of increasing the operating frequency of a circuit comprising: placing on a daughter board elements of a circuit that control high frequency out-of-band stability of the circuit and elements of the circuit that control high frequency out-of-band gain of the circuit for the purpose of reducing parasitic inductance and parasitic capacitance of the elements thereby improving high frequency stability of the amplifier wherein the daughter board has a high thermal conductivity; placing the daughter board and other elements of the circuit on a mother board having a thermal conductivity that is less than the high thermal conductivity of the daughter board; and attaching the daughter board to the mother board and electrically connecting the daughter board to the mother board.
Claim 17
Independent Claim
122 words
A method of increasing the operating frequency of a circuit comprising: placing on a daughter board elements of a circuit that control high frequency out-of-band stability of the circuit and elements of the circuit that control high frequency out-of-band gain of the circuit for the purpose of reducing parasitic inductance and parasitic capacitance of the elements thereby improving high frequency stability of the amplifier wherein the daughter board has a high thermal conductivity; placing the daughter board and other elements of the circuit on a mother board having a thermal conductivity that is less than the high thermal conductivity of the daughter board; and attaching the daughter board to the mother board and electrically connecting the daughter board to the mother board.
Claim 18
Dependent Claim
26 words
The method of claim 14 wherein the placing on a daughter board step includes placing the elements of the circuit on a beryllium oxide daughter board.
Claim 19
Dependent Claim
26 words
The method of claim 14 wherein the placing on a daughter board step includes placing the elements of the circuit on an aluminum nitride daughter board.
Claim 20
Dependent Claim
26 words
The method of claim 14 wherein the placing on a daughter board step includes placing the elements of a push-pull cascode circuit on the daughter board.
Claim 21
Dependent Claim
39 words
The method of claim 14 wherein attaching the daughter board to the mother board includes soldering the daughter board to the mother board at the same time the other elements of the amplifier are soldered to the mother board.
Claim 22
Dependent Claim
22 words
The method of claim 14 further including coupling an input signal to the circuit by using a wide bandwidth transmission line transformer.
Claim 23
Dependent Claim
22 words
The method of claim 14 further including using a wide bandwidth transmission line transformer to couple the circuit to an output terminal.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-08-25 | 1996-02-24 | 1996-08-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-08-25 | 2000-02-24 | 2000-08-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-08-25 | 2004-02-24 | 2004-08-25 | $7700.00 | Window Closed / Lapsed |