Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
58 words
A laser including an amplifier medium, a pumping source to excite said amplifier medium and produce fluorescence photons, and two mirrors defining a cavity containing said amplifier medium, wherein at least one of the mirrors is an active mirror producing light at a determined wavelength in response to an excitation by said fluorescence photons of said amplifier medium.
Claim 2
Dependent Claim
58 words
A laser including an amplifier medium, a pumping source to excite said amplifier medium and produce fluorescence photons, and two mirrors defining a cavity containing said amplifier medium, wherein at least one of the mirrors is an active mirror producing light at a determined wavelength in response to an excitation by said fluorescence photons of said amplifier medium.
Claim 3
Dependent Claim
116 words
A laser according to claim 1, wherein: a) said active mirror is a Bragg reflector constituted by a repeated stacking of alternating layers with different optic indices and with thicknesses chosen so as to ensure a peak of reflectivity perpendicularly to said mirror, for a wavelength substantially equal to said determined laser emission wavelength, and b) at least one of said layers of said alternation is a semiconductor layer having a radiative transition energy corresponding substantially to said determined laser emission wavelength, and a forbidden band energy that is lower than or equal to the energy of said fluorescence photons so that said layer absorbs a part of the fluorescence photons emitted by said amplifier medium.
Claim 4
Dependent Claim
65 words
A laser according to claim 2, wherein said alternating layers comprise two layers and said two layers of the alternation are semiconductor layers, the second layer having a forbidden band energy that is higher than the energy of the fluorescence photons for at least a part of the photons that can be absorbed by the first layer, so as to be transparent for these photons.
Claim 5
Dependent Claim
19 words
A laser according to one of the claims 2 and 3, wherein said semiconductor layer or layers is/are homogeneous.
Claim 6
Dependent Claim
23 words
A laser according to one of the claims 2 and 3, wherein said semiconductor layer or layers are layers with multiple quantum wells.
Claim 7
Dependent Claim
34 words
A laser according to claim 2, wherein another of said layers of said alternation is dielectric and transparent for at least a part of the photons that can be absorbed by the first layer.
Claim 8
Dependent Claim
15 words
A laser according to claim 2, wherein the layers are compounds based on gallium arsenide.
Claim 9
Dependent Claim
17 words
A laser according to claim 7, wherein one of the layers contains aluminium or indium or antimony.
Claim 10
Dependent Claim
14 words
A laser according to claim 2, wherein the second layer is a calcium-strontium fluoride.
Claim 11
Dependent Claim
19 words
A laser according to claim 2, wherein said at least one of said semiconductor layers is a II-VI compound.
Claim 12
Dependent Claim
18 words
A laser according to any of the claims 1-3 wherein the amplifier medium is a titanium doped sapphire.
Claim 13
Dependent Claim
23 words
A laser according to any of the claims 1-3 wherein the active mirror includes different regions having peaks of reflectivity at different wavelengths.
Claim 14
Dependent Claim
40 words
A laser according to any of the claims 1-3 including a cavity provided with two standard mirrors and a semi-reflecting separator plate to send on a part of the fluorescence photons, emitted by the amplifier medium, to the active mirror.
Claim 15
Dependent Claim
18 words
A laser according to claim 2 wherein said repeated stacking is a stack of approximately 20-30 alternating layers.
Claim 16
Dependent Claim
26 words
A laser according to claim 2, wherein said alternating layers each comprise three different layers, at least one of which is a layer of semiconductive material.
Claim 17
Dependent Claim
25 words
A laser according to claim 10, wherein said at least said semiconductive layers is selected from the group consisting of ZnSe, CdTe, ZnZS, CdS, CdSe.