Non-volatile storage cell

Claim 1

An integrated non-volatile storage cell on a semiconductor substrate (2) having (a) a matrix of storage points (53) which are electrically and laterally insulated from one another, each storage point (53) incorporating a stack of gates (54) formed by a first insulant (12a) in contact with the substrate (2), a floating gate (16a) and a control gate (22a) separated from one another by a second insulant (20a), the floating gate having a face in contact with the first insulant and a height which is at least twice its width, a source (32) and a drain (19,34) formed in the substrate (2) on either side of the stack of gates (54) and a channel located in the substrate beneath said stack and whose length is oriented in accordance with a first direction (x) passing from a source to a drain and (b) conductor lines (60a, 62a, 42a, 66a, 68a) for applying electric signals to the stacks of gates (54) and to the drains, characterized in that the second insulant (20a) has, in a plane perpendicular to the surface of the substrate and containing the first direction (x), the shape of an inverted U within which is entirely located the floating gate (16a) and in that the control gate (22a) is also shaped like an inverted U, without lateral extensions in a direction parallel to said first direction (x), and within the same is entirely located the second insulant (20a).