Semiconductor memory device having a sensitivity controllable sense amplifier circuit

Claim 2

A semiconductor memory device, comprising: a pair of bit lines having an initial potential and operating to transfer data from a memory cell; first bias means for producing a first bias voltage and a second bias voltage in response to a first power source voltage and a reference voltage; second bias means for producing a third bias voltage in response to the first power source voltage, the reference voltage and the first bias voltage; adjusting means coupled to the bit lines for adjusting the potential of the bit lines in response to the second bias voltage; and sensing means including a load circuit for sensing the data of the bit lines, wherein the impedance of the load circuit is controlled by the third bias voltage.

Claim 3

The semiconductor memory device of claim 1, wherein the first bias voltage is lower than the initial potential of the bit lines, and the second bias voltage is lower than the first bias voltage.

Claim 4

The semiconductor memory of claim 1, wherein the adjusting means includes a P-type MOS transistor having a source electrode supplied with the reference voltage, a drain electrode connected to the bit line and a gate electrode supplied with the second bias voltage.

Claim 5

The semiconductor memory device of claim 1, wherein the first bias means includes; a first N-type MOS transistor having a source electrode supplied with the power source voltage, a drain electrode and a gate electrode connected to the source electrode thereof; a first P-type MOS transistor having a drain electrode connected to the source electrode of the first N-type MOS transistor, a drain electrode and a gate electrode connected to the drain electrode thereof; and a second N-type MOS transistor having a drain electrode connected to the drain electrode of the first P-type MOS transistor, a source electrode supplied with the reference voltage and a gate electrode supplied with the power source voltage, wherein the first bias means produces the first bias voltage at the source electrode of the first N-type MOS transistor and produces the second bias voltage at the drain electrode of the first P-type MOS transistor.

Claim 6

The semiconductor memory device of claim 1, wherein the second bias means includes a second P-type MOS transistor having a source electrode supplied with the power source voltage, a source electrode, and a gate electrode connected to the source electrode thereof; a third N-type MOS transistor having a drain electrode connected to the drain electrode of the second P-type MOS transistor, a gate electrode supplied with the first bias voltage, and a source electrode; and a fourth N-type MOS transistor having a drain electrode connected to the source electrode of the third N-type MOS transistor and a gate electrode supplied with the power source voltage, wherein the second bias means provides the third bias voltage at the drain electrode of the second P-type MOS transistor.

Claim 7

The semiconductor memory device of claim 1, wherein the sensing means includes; a third P-type MOS transistor having a source electrode supplied with the power source voltage, a drain electrode, and a gate electrode supplied with the third bias voltage; a fourth P-type MOS transistor having a source electrode supplied with the power source voltage, a gate electrode supplied with the third bias voltage, and a drain electrode; a fifth N-type MOS transistor having a drain electrode connected to the drain electrode of the third P-type MOS transistor, a source electrode, and a gate electrode connected to one of the bit lines; a sixth N-type MOS transistor having a drain electrode connected to the drain electrode of the fourth P-type MOS transistor, a gate electrode connected to the remaining bit line, and a source electrode connected to the source electrode of the fifth N-type MOS transistor; and a seventh N-type MOS transistor having a drain electrode connected to the source electrodes of the fifth and the sixth N-type MOS transistors, a gate electrode supplied with the power source voltage, and a source electrode supplied with the reference voltage.

Claim 8

The semiconductor memory device of claim 3, further comprising a second bit line pair having adjusting means supplied with the second bias voltage for adjusting the potential of the second bit line pair.

Claim 9

A semiconductor memory device, comprising: a plurality of bit line pairs transferring data from a corresponding memory cell coupled to the respective bit line pairs; first bias means for producing a first bias voltage and a second bias voltage in response to a first power source voltage and a reference voltage; second bias means for producing a third bias voltage in response to the first power source voltage, the reference voltage and the first bias voltage; adjusting means coupled to the respective bit line pair for adjusting the potential of the bit lines of each bit line pair in response to the second bias voltage; and sensing means including a load circuit for sensing the data of the bit lines, wherein the impedance of the load circuit is controlled by the third bias voltage.

Claim 10

A semiconductor memory device, comprising: a plurality of bit line pairs transferring data from a corresponding memory cell coupled to the respective bit line pairs; first bias means for producing a first bias voltage and a second bias voltage in response to a first power source voltage and a reference voltage; second bias means for producing a third bias voltage in response to the first power source voltage, the reference voltage and the first bias voltage; adjusting means coupled to the respective bit line pair for adjusting the potential of the bit lines of each bit line pair in response to the second bias voltage; and sensing means including a load circuit for sensing the data of the bit lines, wherein the impedance of the load circuit is controlled by the third bias voltage.

Claim 11

The semiconductor memory device of claim 8, wherein the sensing means senses the data of a selected bit line pair in the plurality of bit line pairs.

Claim 12

The semiconductor memory device of claim 8, wherein the sensing means is composed of a plurality of sense amplifier circuits which are individually coupled to the respective bit line pair.