US5132282A
Expired / Lapsed
US
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High temperature superconductor-strontium titanate sapphire structures
Assignee: Silicon Valley Bank Inc
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Filing: 1990-03-16
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Granted: 1992-07-21
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Expires: 2010-03-16
Abstract
Abstract A HTSC layered structure comprising a substrate such as sapphire, a strontium titanate buffer layer and a HTSC film such as YBa 2 Cu 3 O 7 provides a superconductor having lower surface resistance and a narrower transition temperature.
Inventors
- 👤 Nathan Newman
- 👤 Kookrin Char
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:58
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; H10N60/0632; C; C30; C30B; C30B23/00; C30B23/02; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C30B29/225; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/9265; Y10S428/93; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/702; Y10S505/703; Y10S505/704
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
87 words
A superconducting structure comprising: a single crystal sapphire substrate; a thin epitaxial, buffer layer of single crystalline strontium titanate having a thickness of no more than 3000 Angstroms deposited on a surface of the substrate; and a thin film of epitaxial, crystalline, high temperature, metal cuprate superconductor having an ordered lattice and a T c above about 30K deposited on the surface of the buffer layer, said film having better in-plane epitaxy than a high temperature superconductor film grown directly on the surface of the sapphire substrate.
Claim 2
Dependent Claim
87 words
A superconducting structure comprising: a single crystal sapphire substrate; a thin epitaxial, buffer layer of single crystalline strontium titanate having a thickness of no more than 3000 Angstroms deposited on a surface of the substrate; and a thin film of epitaxial, crystalline, high temperature, metal cuprate superconductor having an ordered lattice and a T c above about 30K deposited on the surface of the buffer layer, said film having better in-plane epitaxy than a high temperature superconductor film grown directly on the surface of the sapphire substrate.
Claim 3
Dependent Claim
17 words
A structure according to claim 1 in which the film is in the form of a pattern.
Claim 4
Dependent Claim
19 words
A structure according to claim 2 in which the buffer layer has a thickness of at least 50 Angstroms.
Claim 5
Dependent Claim
18 words
A structure according to claim 3 in which the film has a thickness of at least 100 Angstroms.
Claim 6
Dependent Claim
53 words
A structure according to claim 4 in which the superconductor is a cuprate of the formula: M.sub.x.sup.1 M.sub.y.sup.2 Cu.sub.x O.sub.n where M 1 is a Group IIIA metal, Group IIIB metal, Group VB or a rare earth metal, M 2 is a Group IIA metal and x, y, z and n are integers.
Claim 7
Dependent Claim
31 words
A structure according to claim 5 in which M 1 is selected from yttria, lanthanum, thallium, bismuth, erbium, cerium, praseodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, ytterbium, lutetium or combinations thereof.
Claim 8
Dependent Claim
19 words
A structure according to claim 6 in which M 2 is selected from barium, strontium, calcium or mixtures thereof.
Claim 9
Dependent Claim
17 words
A structure according to claim 7 in which M 1 is yttria and M 2 is barium.
Claim 10
Dependent Claim
20 words
A structure according to claim 8 in which the superconductor is Y 1 Ba 2 Cu 3 O 7 .
References Cited (Backward Citations)
No citation records indexed.
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| 3.5 Years (Year 4) | 1995-07-21 | 1996-01-20 | 1996-07-21 | $2000.00 | Window Closed / Lapsed |
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