Semiconductor device including a metallic conductor for preventing arcing upon failure

Claim 2

A semiconductor device comprising: a metal base; a semiconductor substrate provided on said metal base and forming a semiconductor element region; a metallic electrode formed on said semiconductor substrate; a metallic terminal formed on an insulating material on said metal base; a metallic wire connected to said metallic electrode and to said metallic terminal for electrically connecting said metallic electrode to said metallic terminal; and a flat metallic conductive member, one end of which is electrically connected to said metallic terminal and the other end of which abuts said metallic electrode, for providing an alternate conductive path and thereby preventing an arc in the event said metallic wire separates, said metallic conductive member having a current capacity larger than that of said metallic wire.

Claim 3

A semiconductor device comprising: a metal base; a semiconductor substrate provided on said metal base and forming a semiconductor element region; a metallic electrode formed on said semiconductor substrate; a metallic terminal formed on an insulating material on said metal base; a metallic wire connected to said metallic electrode and to said metallic terminal for electrically connecting said metallic electrode to said metallic terminal; and a flat metallic conductive member, one end of which is electrically connected to said metallic terminal and a surface of the other end of which is spaced a predetermined gap and disconnected from an upper surface of said metallic electrode, for providing an alternate conductive path and thereby preventing an arc in the event said metallic wire separates, said metallic conductive member having a current capacity larger than that of said metallic wire.

Claim 4

A semiconductor device comprising: a metal base; a semiconductor substrate provided on said metal base and forming a semiconductor element region; a metallic electrode formed on said semiconductor substrate; a metallic terminal formed on an insulating material on said metal base; a metallic wire connected to said metallic electrode and to said metallic terminal for electrically connecting said metallic electrode to said metallic terminal; and a flat metallic conductive member, one end of which is electrically connected to said metallic terminal and a surface of the other end of which is spaced a predetermined gap and disconnected from an upper surface of said metallic electrode, for providing an alternate conductive path and thereby preventing an arc in the event said metallic wire separates, said metallic conductive member having a current capacity larger than that of said metallic wire.

Claim 5

A device according to claim 1, wherein said other end of said metallic conductor is kept in contact with an upper surface of said metallic electrode by urging means.

Claim 6

A device according to claim 2, wherein the size of the gap between the surface of said other end of said metallic conductor and the upper surface of said metallic electrode is determined as a function of a surface area of said other end of said metallic conductor.

Claim 7

A semiconductor device comprising: a metal base; a semiconductor substrate provided on said metal base and forming separated semiconductor regions; first and second metallic electrodes separately formed on said semiconductor substrate; a metallic terminal formed on an insulating material on said metal base; a metallic wire connected to said first or second metallic electrode and to said metallic terminal for electrically connecting said metallic terminal to said first or second metallic electrode; and a flat metallic conductive member, one end of which is electrically connected to said metallic terminal and the other end of which abuts said first or second metallic electrode to which said metallic wire is not connected, for providing an alternate conductive path and thereby preventing an arc in the event said metallic wire separates, said metallic conductive member having a current capacity larger than that of said metallic wire.

Claim 8

A semiconductor device comprising: a metal base; a semiconductor substrate provided on said metal base and forming separated semiconductor regions; first and second metallic electrodes separately formed on said semiconductor substrate; a metallic terminal formed on an insulating material on said metal base; a metallic wire connected to said first or second metallic electrode and to said metallic terminal for electrically connecting said metallic terminal to said first or second metallic electrode; and a flat metallic conductive member, one end of which is electrically connected to said metallic terminal and the other end of which abuts said first or second metallic electrode to which said metallic wire is not connected, for providing an alternate conductive path and thereby preventing an arc in the event said metallic wire separates, said metallic conductive member having a current capacity larger than that of said metallic wire.