US5128951A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Laser diode array and method of fabrication thereof
Assignee: Laser Diode Array Inc
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Filing: 1991-03-04
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Granted: 1992-07-07
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Expires: 2011-03-04
Abstract
Abstract A laser diode array in which a conductive layer is provided over a nonconductive or insulating layer, grooves being formed in the conductive layer, and laser diodes being disposed in the grooves. In one embodiment, the layers are separate; in another embodiment, the conductive and nonconductive layers are provided in the same monolithic substrate, which may be undoped semiconductor material such as silicon, with a highly doped upper portion in which the grooves are formed. In another embodiment of the array, the diodes are mounted in the grooves such that at least a portion of their light is emitted towards a bottom of the array.
Inventors
- 👤 Arthur A. Karpinski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 20:18
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/40; H01S5/4025
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
68 words
A laser diode array comprising: a substantially nonconductive lower substrate; a conductive layer formed over said substantially nonconductive substrate, a plurality of grooves being formed in said conductive layer; and a plurality of laser diodes disposed in said grooves, wherein said laser diodes are disposed substantially vertically in said grooves, such that an emission face of said diodes is parallel to a major surface of said conductive layer.
Claim 2
Dependent Claim
68 words
A laser diode array comprising: a substantially nonconductive lower substrate; a conductive layer formed over said substantially nonconductive substrate, a plurality of grooves being formed in said conductive layer; and a plurality of laser diodes disposed in said grooves, wherein said laser diodes are disposed substantially vertically in said grooves, such that an emission face of said diodes is parallel to a major surface of said conductive layer.
Claim 3
Dependent Claim
29 words
An array as claimed in claim 1, wherein said substantially nonconductive layer comprises a material selected from the group consisting of ceramic, diamond, AlN, BeO, silicon, and gallium arsenide.
Claim 4
Dependent Claim
15 words
An array as claimed in claim 1, wherein said conductive layer comprises a metal sheet.
Claim 5
Dependent Claim
16 words
An array as claimed in claim 1, wherein said conductive layer comprises a thin film layer.
Claim 6
Dependent Claim
16 words
An array as claimed in claim 1, wherein said conductive layer comprises a thick film layer.
Claim 7
Dependent Claim
16 words
An array as claimed in claim 1, wherein said conductive layer comprises a conductive semiconductor layer.
Claim 8
Dependent Claim
15 words
An array as claimed in claim 1, wherein said conductive layer comprises a plated layer.
Claim 9
Dependent Claim
41 words
An array as claimed in claim 1, wherein said laser diodes are mounted in said grooves such that at least a portion of the light emitted from said laser diodes is emitted in a direction toward a bottom of said array.
Claim 10
Dependent Claim
85 words
A monolithic laser diode array comprising: a monolithic substrate having upper and lower portions, said lower portion of said substrate being substantially undoped and electrically nonconductive, and said upper portion being highly doped and electrically conductive, a plurality of grooves being formed in said upper portion; and a plurality of laser diodes disposed in said grooves, wherein said laser diodes are disposed substantially vertically in said grooves, such that an emission face of said diodes is parallel to a major surface of said upper portion.
Claim 11
Dependent Claim
85 words
A monolithic laser diode array comprising: a monolithic substrate having upper and lower portions, said lower portion of said substrate being substantially undoped and electrically nonconductive, and said upper portion being highly doped and electrically conductive, a plurality of grooves being formed in said upper portion; and a plurality of laser diodes disposed in said grooves, wherein said laser diodes are disposed substantially vertically in said grooves, such that an emission face of said diodes is parallel to a major surface of said upper portion.
Claim 12
Dependent Claim
13 words
An array as claimed in claim 9, wherein said substrate comprises semiconductor material.
Claim 13
Dependent Claim
13 words
An array as claimed in claim 10, wherein said semiconductor material is silicon.
Claim 14
Dependent Claim
14 words
An array as claimed in claim 10, wherein said semiconductor material is gallium arsenide.
Claim 15
Dependent Claim
35 words
An array as claimed in claim 9, wherein said laser diodes are mounted in said grooves such that at least a portion of the light emitted therefrom is emitted toward a bottom of said array.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-07-07 | 1996-01-06 | 1996-07-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-07-07 | 2000-01-06 | 2000-07-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-07-07 | 2004-01-06 | 2004-07-07 | $7700.00 | Window Closed / Lapsed |