Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
189 words
A fused high density multi-layer integrated circuit module upon which thin-film microcircuits are formed, for integrating an infrared detector array to signal conditioning circuitry without the use of a buffer board, said module comprised of: (a) a plurality of thin substrate layers disposed in substantially overlapping registry to form a non-conductive supporting body; (b) a dielectric material layer disposed intermediate said substrate layers to bond adjacent substrate layers together, said dielectric material having a thermal coefficient of expansion of between 6.5 and 9 microns/meter/ degree centigrade and having a melting point of less than 800 degrees centigrade, such that the coefficient of expansion of said dielectric material layer is approximately equal to the thermal coefficient of expansion of said substrate layers; (c) wherein the use of a dielectric material having a thermal coefficient of expansion approximately equal to the thermal coefficient of expansion of said substrate layers reduces thermal stress such that the requirement for a buffer board is eliminated and the use of a dielectric material having a melting point of less than 800 degrees centigrade mitigates the possibility of damaging the thin-film microcircuits during the fusing process.
Claim 2
Dependent Claim
189 words
A fused high density multi-layer integrated circuit module upon which thin-film microcircuits are formed, for integrating an infrared detector array to signal conditioning circuitry without the use of a buffer board, said module comprised of: (a) a plurality of thin substrate layers disposed in substantially overlapping registry to form a non-conductive supporting body; (b) a dielectric material layer disposed intermediate said substrate layers to bond adjacent substrate layers together, said dielectric material having a thermal coefficient of expansion of between 6.5 and 9 microns/meter/ degree centigrade and having a melting point of less than 800 degrees centigrade, such that the coefficient of expansion of said dielectric material layer is approximately equal to the thermal coefficient of expansion of said substrate layers; (c) wherein the use of a dielectric material having a thermal coefficient of expansion approximately equal to the thermal coefficient of expansion of said substrate layers reduces thermal stress such that the requirement for a buffer board is eliminated and the use of a dielectric material having a melting point of less than 800 degrees centigrade mitigates the possibility of damaging the thin-film microcircuits during the fusing process.
Claim 3
Dependent Claim
38 words
The fused high density multi-layer integrated circuit module as recited in claim 1 wherein said dielectric material is selected from the group consisting of: (a) lead-borosilicate glass; (b) glass-rich ceramics; (c) green ceramics; and (d) lead borate glass.
Claim 4
Dependent Claim
19 words
The fused high density multi-layer integrated circuit module as recited in claim 2 wherein said dielectric material comprises tape.
Claim 5
Dependent Claim
19 words
The fused high density multi-layer integrated circuit module as recited in claim 2 wherein said dielectric material comprises paste.
Claim 6
Dependent Claim
58 words
The fused high density multi-layer integrated circuit module as recited in claim 1 wherein the dielectric material is comprised of at least one of: (a) a lead-borosilicate glass frit having a thermal coefficient of expansion of approximately 7.0 microns/meter/degree centigrade; and (b) a high lead-borosilicate glass frit having a thermal coefficient of expansion of approximately 8.4 micron/meter/degree centigrade.
Claim 7
Dependent Claim
23 words
The fused high-density multi-layer integrated circuit module as recited in claim 5 wherein said substrate layers are comprised of an alumina ceramic material.
Claim 8
Dependent Claim
25 words
The fused high density multi-layer integrated circuit module as recited in claim 6 wherein said dielectric material has a melting point between 400-550 degrees centigrade.