US5126816A
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Integrated circuit with anti latch-up circuit in complementary MOS circuit technology
Assignee: Qimonda AG
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Filing: 1991-10-10
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Granted: 1992-06-30
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Expires: 2011-10-10
Abstract
Abstract Integrated circuit having anti latch-up circuit in complementary MOS circuit technology. Due to the incorporation of non-linear elements between the ground (V ss ) and the p-conductive semiconductor substrate (P sub ) and between the supply voltage (V DD ) and the n-conductive semiconductor zone (N w ), the risk of the occurrence of the latch-up effect triggered by the build-up of base charges at the parasitic vertical and lateral bipolar transistors is diminished. The space requirement for the non-linear elements to be additionally incorporated is low and the circuit properties of the MOS transistors are not influenced as a result thereof. The realization of the non-linear elements can ensue with Schottky contacts or with additional MOS transistors that are wired as diode elements. A realization in the form of buried diodes of polycrystalline silicon (PSi) is also possible, realized, for example, as barrier layer diodes.
Inventors
- 👤 Werner Reczek
- 👤 Josef Winnerl
- 👤 Wolfgang Pribyl
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 19:01
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/854
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
165 words
Integrated circuit having an anti-latch-up circuit in complementary MOS circuit technology having a doped semiconductor substrate of a first conductivity type containing a field effect transistor of a first channel type with a source terminal directly connected to ground and having a well-shaped semiconductor zone of a second conductivity type inserted in the doped semiconductor substrate containing a field effect transistor of a second channel type with a source terminal directly connected to a supply voltage, comprising the anti latch-up circuit containing first and second non-linear elements and the first non-linear element having a first terminal connected to ground and having a second terminal connected to the doped semiconductor substrate of a first conductivity type and the second non-linear element having a first terminal connected to the supply voltage and having a second terminal connected to the inserted, well-shaped semiconductor zone of a second conductivity type, the first and second non-linear elements respectively operationally coupled to the semiconductor substrate and to the well-shaped semiconductor zone.
Claim 2
Dependent Claim
165 words
Integrated circuit having an anti-latch-up circuit in complementary MOS circuit technology having a doped semiconductor substrate of a first conductivity type containing a field effect transistor of a first channel type with a source terminal directly connected to ground and having a well-shaped semiconductor zone of a second conductivity type inserted in the doped semiconductor substrate containing a field effect transistor of a second channel type with a source terminal directly connected to a supply voltage, comprising the anti latch-up circuit containing first and second non-linear elements and the first non-linear element having a first terminal connected to ground and having a second terminal connected to the doped semiconductor substrate of a first conductivity type and the second non-linear element having a first terminal connected to the supply voltage and having a second terminal connected to the inserted, well-shaped semiconductor zone of a second conductivity type, the first and second non-linear elements respectively operationally coupled to the semiconductor substrate and to the well-shaped semiconductor zone.
Claim 3
Dependent Claim
182 words
Integrated circuit having an anti-latch-up circuit in complementary MOS circuit technology having a well-shaped semiconductor zone of a first conductivity type inserted into a semiconductor substrate of a second conductivity, and also having a field effect transistor of a first channel type with a source terminal directly connected to ground and arranged within the well-shaped semiconductor zone of a first conductivity type and having a field effect transistor of a second channel type with a source terminal directly connected to a supply voltage and arranged within the semiconductor substrate of a second conductivity type, comprising the anti latch-up circuit containing first and second non-linear elements and the first non-linear element having a first terminal connected to ground and having a second terminal connected to the well-shaped semiconductor zone of a first conductivity type, and the second non-linear element having a first terminal connected to the supply voltage and having a second terminal connected to the doped semiconductor substrate of a second conductivity type, the first and second non-linear elements respectively operationally coupled to the semiconductor substrate and to the well-shaped semiconductor zone.
Claim 4
Dependent Claim
182 words
Integrated circuit having an anti-latch-up circuit in complementary MOS circuit technology having a well-shaped semiconductor zone of a first conductivity type inserted into a semiconductor substrate of a second conductivity, and also having a field effect transistor of a first channel type with a source terminal directly connected to ground and arranged within the well-shaped semiconductor zone of a first conductivity type and having a field effect transistor of a second channel type with a source terminal directly connected to a supply voltage and arranged within the semiconductor substrate of a second conductivity type, comprising the anti latch-up circuit containing first and second non-linear elements and the first non-linear element having a first terminal connected to ground and having a second terminal connected to the well-shaped semiconductor zone of a first conductivity type, and the second non-linear element having a first terminal connected to the supply voltage and having a second terminal connected to the doped semiconductor substrate of a second conductivity type, the first and second non-linear elements respectively operationally coupled to the semiconductor substrate and to the well-shaped semiconductor zone.
Claim 5
Dependent Claim
47 words
Integrated circuit according to claim 1, wherein the first terminal of the first non-linear element is replaced by a terminal at negative substrate potential and wherein the first terminal of the second non-linear element is replaced by a terminal having more positive potential than the supply voltage.
Claim 6
Dependent Claim
15 words
Integrated circuit according to claim 1, wherein the non-linear elements are fashioned as Schottky contacts.
Claim 7
Dependent Claim
95 words
Integrated circuit according to claim 4, wherein a metal contact of the Schottky contact of the first non-linear element covers the source terminal of the field effect transistor of the first channel type and covers the doped semiconductor substrate of a first conductivity type and forms a first double contact; and wherein a metal contact of the Schottky contact of the second non-linear element covers the source terminal of the field effect transistor of the second channel type and covers the well-shaped semiconductor zone of a second channel type and forms a second double contact.
Claim 8
Dependent Claim
21 words
Integrated circuit according to claim 1, wherein the non-linear elements are realized by MOS transistors that are connected as diode elements.
Claim 9
Dependent Claim
123 words
Integrated circuit according to claim 6, wherein a first MOS transistor of a first channel type is arranged within an inserted, further well-shaped semiconductor zone of a second conductivity type; wherein a first terminal of the first MOS transistor and a second terminal of the first MOS transistor is connected to the doped semiconductor substrate of a first conductivity type; wherein a second MOS transistor of a second channel type is arranged within the doped semiconductor substrate of a first conductivity type; wherein a first terminal of the second MOS transistor is connected to a gate of the second MOS transistor and a second terminal of the second MOS transistor is connected to the inserted, well-shaped semiconductor zone of a second conductivity type.
Claim 10
Dependent Claim
18 words
Integrated circuit according to claim 1, wherein the non-linear elements are realized in the form of buried diodes.
Claim 11
Dependent Claim
24 words
Integrated circuit according to claim 8, wherein the non-linear elements contain essentially doped polycrystalline silicon of the conductivity type opposite that of the substrate.
Claim 12
Dependent Claim
25 words
Integrated circuit according to claim 8, wherein the non-linear elements contain essentially polycrystalline silicon of the conductivity type opposite that of the well-shaped semiconductor zone.
Claim 13
Dependent Claim
16 words
Integrated circuit according to claim 8, wherein the non-linear elements are fashioned as barrier layer diodes.
Claim 14
Dependent Claim
21 words
Integrated circuit according to claim 8, wherein the first terminals of the non-linear elements are connected via ohmic contacts to ground.
Claim 15
Dependent Claim
33 words
Integrated circuit according to claim 11, wherein the second terminals of the barrier layer diodes are connected to a more highly doped semiconductor region of the same conductivity type as the polycrystalline silicon.
Claim 16
Dependent Claim
47 words
Integrated circuit according to claim 2, wherein the first terminal of the first non-linear element is replaced by a terminal at negative substrate potential and wherein the first terminal of the second non-linear element is replaced by a terminal having more positive potential than the supply potential.
Claim 17
Dependent Claim
15 words
Integrated circuit according to claim 2, wherein the non-linear elements are fashioned as Schottky contacts.
Claim 18
Dependent Claim
95 words
Integrated circuit according to claim 15, wherein a metal contact of the Schottky contact of the first non-linear element covers the source terminal of the field effect transistor of the first channel type and covers the well-shaped semiconductor zone of a first conductivity type and forms a first double contact; and wherein a metal contact of the Schottky contact of the second non-linear element covers a first terminal of the field effect transistor of the second channel type and covers the doped semiconductor substrate of a second channel type and forms a second double contact.
Claim 19
Dependent Claim
21 words
Integrated circuit according to claim 2, wherein the non-linear elements are realized by MOS transistors that are connected as diode elements.
Claim 20
Dependent Claim
124 words
Integrated circuit according to claim 17, wherein a first MOS transistor of a first channel type is arranged within an inserted, further well-shaped semiconductor zone of a second conductivity type; wherein a first terminal of the first MOS transistor is connected to a gate of the first MOS transistor is connected to the doped semiconductor substrate of a first conductivity type; wherein a second MOs transistor of a second channel type is arranged within the doped semiconductor substrate of a first conductivity type; wherein a first terminal of the second MOS transistor is connected to a gate of the second MOS transistor and a second terminal of the second MOS transistor is connected to the inserted, well-shaped semiconductor zone of a second conductivity type.
Claim 21
Dependent Claim
16 words
Integrated circuit according to claim 9, wherein the non-linear elements are fashioned as barrier layer diodes.
Claim 22
Dependent Claim
22 words
Integrated circuit according to claim 9, wherein the first terminals of the non-linear elements are connected via ohmic contacts to grounded potential.
Claim 23
Dependent Claim
32 words
Integrated circuit according to claim 9, wherein the second terminals of the non-linear elements are connected to a more highly doped semiconductor region of the same conductivity type as the polycrystalline silicon.
Claim 24
Dependent Claim
24 words
Integrated circuit according to claim 1, wherein the first terminal of the first non-linear element is replaced by a terminal at negative substrate potential.
Claim 25
Dependent Claim
28 words
Integrated circuit according to claim 1, wherein the first terminal of the second non-linear element is replaced by a terminal having more positive potential than the supply voltage.
Claim 26
Dependent Claim
24 words
Integrated circuit according to claim 2, wherein the first terminal of the first non-linear element is replaced by a terminal at negative substrate potential.
Claim 27
Dependent Claim
28 words
Integrated circuit according to claim 2, wherein the first terminal of the second non-linear element is replaced by a terminal having more positive potential than the supply voltage.
Claim 28
Dependent Claim
36 words
Integrated circuit according to claim 8, wherein the first terminals of the non-linear elements are connected via ohmic contacts to a more highly doped semiconductor region of the conductivity type opposite that of the polycrystalline silicon.
Claim 29
Dependent Claim
32 words
Integrated circuit according to claim 8, wherein the second terminals of the barrier layer diodes are connected via a diffusion region to the supply voltage upon formation of the barrier layer diodes.
Claim 30
Dependent Claim
36 words
Integrated circuit according to claim 9, wherein the first terminals of the non-linear elements are connected via ohmic contacts to a more highly doped semiconductor region of the conductivity type opposite that of the polycrystalline silicon.
Claim 31
Dependent Claim
31 words
Integrated circuit according to claim 9, wherein the second terminals of the non-linear elements are connected via a diffusion region to the supply potential upon formation of the barrier layer diodes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-06-30 | 1995-12-30 | 1996-06-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-06-30 | 1999-12-30 | 2000-06-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-06-30 | 2003-12-30 | 2004-06-30 | $7700.00 | Window Closed / Lapsed |